Semiconductor polysilicon component and method of manufacture thereof
First Claim
1. A method of fabricating a polycrystalline transparent semiconductor member, characterized in that the method comprises:
- forming a conductive film on a transparent substrate, and with a DC-bias applying to the formed conductive film, forming, according to a sputtering method, a polycrystalline zinc oxide thin film having a-axis orientation; and
forming, by means of a MO-CVD method, a second polycrystalline zinc oxide thin film having a-axis orientation on the polycrystalline zinc oxide thin film;
wherein in the MO-CVD method, hydrative zinc acetyl acetonate is used as a raw material.
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Abstract
On a transparent substrate 110, by use of, for instance, vapor deposition, an Al film 120 is formed ((A)-(B)). Subsequently, with a DC-bias applied on a surface of the Al film 120, a first zinc oxide thin film 130 is formed by use of a sputtering method (C). On a surface of the first zinc oxide thin film 130, according to an atmospheric MO-CVD method, a second zinc oxide thin film 140 is formed (D). When the second zinc oxide thin film 140 deposited by use of an MO-CVD method is formed on the first zinc oxide thin film 130 having a-axis orientation, the second zinc oxide thin film 140 becomes to have the a-axis orientation.
Since the Al thin film 120, owing to heat during the deposition by use of the MO-CVD method, is absorbed in the first zinc oxide thin film, the transparency is improved. As a result, a sample having a ZnO/ZnO/Al/glass structure becomes high in the transparency as a whole.
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Citations
7 Claims
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1. A method of fabricating a polycrystalline transparent semiconductor member, characterized in that the method comprises:
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forming a conductive film on a transparent substrate, and with a DC-bias applying to the formed conductive film, forming, according to a sputtering method, a polycrystalline zinc oxide thin film having a-axis orientation; and
forming, by means of a MO-CVD method, a second polycrystalline zinc oxide thin film having a-axis orientation on the polycrystalline zinc oxide thin film;
wherein in the MO-CVD method, hydrative zinc acetyl acetonate is used as a raw material. - View Dependent Claims (2, 3, 4, 5)
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- 6. A transparent semiconductor element, characterized in that the semiconductor element is fabricated by laminating a transparent substrate, a metal oxide film, a first zinc oxide thin film having a-axis orientation, and a second zinc oxide thin film having a-axis orientation, and by disposing, on the second zinc oxide thin film having a-axis orientation, a transparent source electrode and drain electrode, and a transparent gate insulating film and gate electrode, and has transmittance of 50% or more in the visible region.
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