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Etch chamber with dual frequency biasing sources and a single frequency plasma generating source

  • US 20040025791A1
  • Filed: 01/14/2003
  • Published: 02/12/2004
  • Est. Priority Date: 08/09/2002
  • Status: Abandoned Application
First Claim
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1. Apparatus for controlling a plasma in a chamber during wafer processing, comprising:

  • a biasing element disposed in said chamber and adapted to support a wafer;

    a plasma generating element disposed over said biasing element;

    a first power source coupled to said plasma generating element; and

    a second power source coupled to said biasing element that provides a modulated signal to said biasing element.

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