Two-compartment chamber for sequential processing method

• US 20040026371A1
• Filed: 08/06/2002
• Published: 02/12/2004
• Est. Priority Date: 08/06/2002
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Tegal Corp. (Rennova Health, Inc.)
• Inventors: Nguyen, Tue, Nguyen, Tai Dung, Bercaw, Craig Alan
• Granted Patent: US 6,921,555 B2
• Time in Patent Office: Days
• US Class Current: 216/67
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/67748 horizontal transfer of a single workpiece

Abstract

An apparatus for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from one compartment to the other compartment. The transfer mechanism comprises two doors to seal the pathway between the two compartments between movement so that the two compartments are isolated and the workpiece can be processed sequentially and isolatedly in each compartment. The apparatus further comprises components to enable the processing of a workpiece: a delivery system to delivery precursor, a plasma source to generate a plasma and a vacuum pump to maintain a sub-atmospheric pressure. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then transfer to the second compartment for a reaction or a plasma reaction on the existing thin layer.

Claims

1. A method to sequential processing a workpiece, the method comprising the steps of:

a) processing the workpiece in a first compartment;

b) transferring the workpiece from the first compartment to a second compartment, the second compartment being isolated from the first compartment;

c) processing the workpiece in the second compartment.

2. A method as in claim 1, further comprising the steps of:

d) transferring the workpiece from the second compartment to the first compartment, the first compartment being isolated from the second compartment;

e) repeat step a to d.

3. A method as in claim 1, wherein processing the workpiece in step a) comprises the deposition of a thin film.

4. A method as in claim 1, wherein processing the workpiece in step a) comprises the adsorption of a thin film.

5. A method as in claim 1, wherein processing the workpiece in step c) comprises the reaction of a precursor on the existing film.

6. A method as in claim 1, wherein processing the workpiece in step c) comprises the plasma reaction of a precursor on the existing film.

7. A method to sequential processing a workpiece, the method comprising the steps of:

a) flowing a plurality of first precursors on the workpiece in a first compartment;

b) transferring the workpiece from the first compartment to a second compartment, the second compartment being isolated from the first compartment;

c) flowing a plurality of second precursors on the workpiece in the second compartment.

8. A method as in claim 7, wherein flowing a plurality of first precursors on the workpiece in step a) comprises the deposition of a thin film.

9. A method as in claim 7, wherein flowing a plurality of first precursors on the workpiece in step a) comprises the adsorption of a thin film.

10. A method as in claim 7, wherein flowing a plurality of second precursors on the workpiece in step c) comprises the reaction of a precursor on the existing film.

11. A method as in claim 7, wherein flowing a plurality of second precursors on the workpiece in step c) comprises the plasma reaction of a precursor on the existing film.

12. A method to sequential processing a workpiece, the method comprising the steps of:

a) introducing a thin film on the workpiece in a first compartment;

b) transferring the workpiece from the first compartment to a second compartment, the second compartment being isolated from the first compartment;

c) removing a thin film on the workpiece in the second compartment.

13. A method as in claim 12, wherein introducing a thin film on the workpiece in step a) comprises the deposition of a thin film.

14. A method as in claim 12, wherein introducing a thin film on the workpiece in step a) comprises the adsorption of a thin film.

15. A method as in claim 12, wherein removing a thin film on the workpiece in step c) comprises the etching reaction on the existing film.

16. A method as in claim 12, wherein removing a thin film on the workpiece in step c) comprises the plasma enhanced etching reaction on the existing film.