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Insulated gate field effect transistor having passivated schottky barriers to the channel

  • US 20040026736A1
  • Filed: 01/14/2003
  • Published: 02/12/2004
  • Est. Priority Date: 08/12/2002
  • Status: Active Grant
First Claim
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1. A transistor, comprising a semiconductor channel disposed (i) nearby a gate configured to control conductance within the channel and (ii) in an electrical path between a source and a drain, at least one of which is made of a metal, wherein the channel and whichever of the source and/or the drain is/are made of the metal is/are separated by an interface layer so as to form a channel—

  • interface layer—

    source/drain junction in which a Fermi level of the semiconductor channel is depinned in a region near the junction and the junction has a specific contact resistance of less than approximately 1000 Ω



    m2.

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