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MOS transistor device

  • US 20040026737A1
  • Filed: 05/28/2003
  • Published: 02/12/2004
  • Est. Priority Date: 05/28/2002
  • Status: Active Grant
First Claim
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1. A MOS transistor device, comprising:

  • a semiconductor region having a trench structure formed therein extending substantially in a first direction being a vertical direction, said trench structure having a lower region; and

    an avalanche breakdown region disposed in said lower region of said trench structure, at least one of a position and a configuration of said avalanche breakdown region being determined and set in at least one lateral second direction, being substantially perpendicular to the first direction, by one at least one of a course of the trench structure and a variation of at least one of a width and a depth of the trench structure, the width being measured in a third direction being substantially perpendicular to the first and second directions, and the depth being measured in the first direction, and as a result forming a low on resistance of the MOS transistor device.

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