×

Semiconductor devices having strained dual channel layers

  • US 20040026765A1
  • Filed: 06/06/2003
  • Published: 02/12/2004
  • Est. Priority Date: 06/07/2002
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor structure, comprising:

  • a strain-inducing substrate layer;

    a compressively strained layer on the strain-inducing substrate layer, and comprising germanium having a concentration at least approximately 30 percentage points greater than the germanium concentration of the strain-inducing substrate layer, the compressively strained layer having a thickness less than its critical thickness; and

    a tensilely strained layer comprising silicon on the compressively strained layer, the tensilely strained layer having a thickness less than its critical thickness.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×