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Method for making a strain-relieved tunable dielectric thin film

  • US 20040028838A1
  • Filed: 08/07/2003
  • Published: 02/12/2004
  • Est. Priority Date: 04/13/2001
  • Status: Abandoned Application
First Claim
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1. A method of making a tunable dielectric thin film, the method comprising the steps of:

  • depositing a buffer layer on a low dielectric loss substrate; and

    depositing a layer of crystalline dielectric film on the buffer layer, wherein the buffer layer and the crystalline dielectric film comprise barium strontium titanate and wherein the barium strontium titanate eventually comprises a randomly oriented crystalline cubic phase in each of the buffer layer and the crystalline dielectric film.

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