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Organic field-effect transistor (ofet), a production method therefor, an integrated circut constructed from the same and their uses

  • US 20040029310A1
  • Filed: 07/14/2003
  • Published: 02/12/2004
  • Est. Priority Date: 08/18/2000
  • Status: Abandoned Application
First Claim
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1. An organic field-effect transistor on a substrate, at least one semiconducting layer connecting at least one drain and one source electrode, at least two insulating layers and at least one conductive layer with a gate electrode being applied on the substrate in such a way that after a voltage has been applied to the gate electrode, the field effect gives rise to at least two current channels and/or a current channel running vertically, that is to say transversely with respect to the surface of the substrate.

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