Method of manufacturing device, device, and electronic apparatus
First Claim
1. A method of manufacturing a device comprising:
- forming individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, wherein a process of forming the silicon film comprises;
a step of applying a liquid material to form an applied film; and
converting the applied film into the silicon film with at least one of a heating and a light irradiating step; and
wherein, as the liquid material, a high-order silane composition comprising a high-order silane formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.
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Abstract
A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, comprising: a step of applying a liquid material to form an applied film; and a heat treatment and/or a light irradiating treatment of making the applied film into the silicon film, wherein, as the liquid material, a high-order silane composition comprising a high-order silence formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.
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Citations
35 Claims
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1. A method of manufacturing a device comprising:
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forming individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, wherein a process of forming the silicon film comprises;
a step of applying a liquid material to form an applied film; and
converting the applied film into the silicon film with at least one of a heating and a light irradiating step; and
wherein, as the liquid material, a high-order silane composition comprising a high-order silane formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used. - View Dependent Claims (2, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 34, 35)
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3. A method of manufacturing a device, comprising:
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a step of applying a liquid material on an insulator to form an applied film;
a step of converting the applied film into a silicon film by at least one of heating and light irradiating;
a step of patterning the silicon film to form isolated regions which will become a source, a drain, and a channel;
a step of forming a gate insulating film on the silicon film;
a step of forming a gate electrode on the gate insulating film;
a step of forming a doped silicon film which will become source/drain regions;
a step of forming an interlayer insulating film over the gate electrode and the source/drain regions;
a step of opening the interlayer insulating film to form a contact hole; and
a step of forming an electrode and wiring at the contact hole, wherein, as the liquid material, a high-order silane composition comprising a high-order silane formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.
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4. A method of manufacturing a device, comprising:
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a step of forming a dopant-containing semiconductor layer which will become source/drain regions, on an insulator;
a step of applying a liquid material on the insulator to form an applied film;
a step of converting the applied film into a silicon film by at least one of heating and light irradiating;
a step of patterning the silicon film to form an isolated region which will become a channel region connected to the source/drain regions;
a step of forming a gate insulating film over the channel and source/drain regions;
a step of forming a gate electrode on the gate insulating layer;
a step of forming an interlayer insulating film over the gate electrode;
a step of opening the interlayer insulating film to form a contact hole; and
a step of forming an electrode and wiring at the contact hole, wherein, as the liquid material, a high-order silane composition comprising a high-order silane formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.
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5. A method of manufacturing a device, comprising:
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a step of forming a gate electrode on an insulator;
a step of forming a gate insulating film on the gate electrode;
a step of applying a liquid material on the insulator to form an applied film;
a step of converting the applied film into a silicon film by at least one of heating and light irradiating;
a step of forming a dopant-containing semiconductor layer which will become source/drain regions on the silicon film; and
a step of forming an electrode and wiring at the source/drain regions, wherein, as the liquid material, a high-order silane composition comprising a high-order silane formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.
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Specification