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Method of manufacturing device, device, and electronic apparatus

  • US 20040029364A1
  • Filed: 04/22/2003
  • Published: 02/12/2004
  • Est. Priority Date: 04/22/2002
  • Status: Active Grant
First Claim
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1. A method of manufacturing a device comprising:

  • forming individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, wherein a process of forming the silicon film comprises;

    a step of applying a liquid material to form an applied film; and

    converting the applied film into the silicon film with at least one of a heating and a light irradiating step; and

    wherein, as the liquid material, a high-order silane composition comprising a high-order silane formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.

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