Method of manufacturing device, device, and electronic apparatus

• US 20040029364A1
• Filed: 04/22/2003
• Published: 02/12/2004
• Est. Priority Date: 04/22/2002
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Aoki, Takashi, Yudasaka, Ichio, Furusawa, Masahiro
• Granted Patent: US 6,884,700 B2
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/02636 Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
• CPC Class Codes: H01L 21/32055 Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458

Abstract

A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, comprising: a step of applying a liquid material to form an applied film; and a heat treatment and/or a light irradiating treatment of making the applied film into the silicon film, wherein, as the liquid material, a high-order silane composition comprising a high-order silence formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.

Claims

1. A method of manufacturing a device comprising:

forming individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring,

wherein a process of forming the silicon film comprises;

a step of applying a liquid material to form an applied film; and

converting the applied film into the silicon film with at least one of a heating and a light irradiating step; and

wherein, as the liquid material, a high-order silane composition comprising a high-order silane formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.

2. The method of manufacturing a device according to claim 1 wherein the individual thin films further comprise a transparent conductive film.

6. The method of manufacturing a device according to claim 1, wherein the step of converting with at least one of heating and light irradiating comprises a first step for making the applied liquid material into an amorphous silicon film and a second step for making the amorphous silicon film into a polycrystalline silicon film.

7. The method of manufacturing a device according to claim 6, wherein the first step comprises a step of irradiating light having a wavelength of 170 nm to 380 nm.

8. The method of manufacturing a device according to claim 6, wherein the first step comprises a step of removing a solvent contained in the applied film formed by the liquid material and, a step for making the applied film into the amorphous silicon film by heating the applied film at a temperature higher than that used in the step of removing the solvent.

9. The method of manufacturing a device according to claim 6, wherein the second step comprises a step of heating at a high temperature for a short time with intense light.

10. The method of manufacturing a device according to claim 1, the process of forming the silicon film comprising the step of applying the liquid material to form the applied film and the converting step for making the applied film into the silicon film, wherein all the steps are carried out in an oxygen-free atmosphere.

11. The method of manufacturing a device according to claim 9, wherein the step of heating at a high temperature for a short time with intense light is carried out in an oxygen-free atmosphere.

12. The method of manufacturing a device according to claim 10, wherein the oxygen-free atmosphere has an oxygen concentration of 10 ppm or less.

13. The method of manufacturing a device according to claim 1, wherein the step of forming the gate insulating film comprises a step of applying polyperhydrosilazane on the substrate;

and a step for making the applied polyperhydrosilazane into an SiO₂ film through a heat treatment.

14. The method of manufacturing a device according to claim 1, wherein the step of forming the gate electrode comprises a step of applying a metal-containing liquid material on the substrate to form a second applied film;

and a step for making the second applied film into a metal film through a heat treatment.

15. The method of manufacturing a device according to claim 1, wherein the step of forming the gate electrode comprises a step of forming a metal film on the substrate through a plating method.

16. The method of manufacturing a device according to claim 1, wherein the step of forming the gate electrode comprises a step of applying an organic compound containing indium and tin on the substrate to form an applied film;

and a heating step for making the applied film into an Indium-Tin-Oxide film.

17. The method of manufacturing a device according to claim 1, wherein the step of forming the interlayer insulating film comprises a step of applying polyperhydrosilazane on the substrate;

and a step for making the polyperhydrosilazane into an SiO₂ film through a heat treatment.

18. The method of manufacturing a device according to claim 1, wherein the step of forming the electrode and the wiring comprises a step of applying a metal-containing liquid material on the substrate to form a second applied film;

and a step for making the second applied film into a metal film through a heat treatment.

19. The method of manufacturing a device according to claim 1, wherein the step of forming the electrode and the wiring comprises a step of forming a metal film on the substrate through a plating method.

20. The method of manufacturing a device according to claims 1, wherein the step of forming the electrode and the wiring comprises a step of applying an organic compound containing indium and tin on the substrate to form a second applied film;

and a heating step for making the second applied film into an Indium-Tin-Oxide film.

21. The method of manufacturing a device according to claim 2, wherein the step of forming the transparent conductive film comprises a step of applying an organic compound containing indium and tin on the substrate to form a second applied film;

and a heating step for making the second applied film into an Indium-Tin-Oxide film.

22. The method of manufacturing a device according to claim 1, wherein the high-order silane composition used as the liquid material comprises a high-order silane having a boiling point and a decomposing point, the boiling point being higher than the decomposing point.

23. The method of manufacturing a device according to claim 22, wherein the high-order silane composition is formed by using UV rays having a wavelength at which the solvent used in the silane compound solution is not decomposed.

24. The method of manufacturing a device according to claim 22, wherein the high-order silane composition is formed by irradiating with UV rays for 0.1 seconds to 120 minutes.

25. The method of manufacturing a device according to claim 22, wherein the high-order silane composition is formed using a compound having at least one ring-shaped structure within a molecule as the silane compound.

26. The method of manufacturing a device according to claim 22, wherein the high-order silane composition is formed using a compound expressed as a general formula Si_nX_2n (where X represents a at least one of a hydrogen atom and a halogen atom and n represents an integer of 3 or more).

27. The method of manufacturing a device according to claim 22, wherein the high-order silane composition is formed by adding at least one of a material containing a Group IIIB element and a material containing a Group VB element.

28. The method of manufacturing a device according to claim 1, wherein all of the thin films are formed using liquid materials and all of the thin films are formed without using a vacuum apparatus.

29. The method of manufacturing a device according to claim 1, wherein all of the thin films are formed using liquid materials and all of the thin films are formed under atmospheric pressure.

30. The method of manufacturing a device according to claim 1, wherein all of the thin films are formed using liquid materials, and at least the silicon film, the conductive film for the gate electrode and the conductive film for the electrode and wiring are formed isolatedly by using a droplet ejection method.

34. A device manufactured by means of the method of forming a device according to claim 1.

35. An electronic apparatus comprising the device according to claim 34.

3. A method of manufacturing a device, comprising:

a step of applying a liquid material on an insulator to form an applied film;

a step of converting the applied film into a silicon film by at least one of heating and light irradiating;

a step of patterning the silicon film to form isolated regions which will become a source, a drain, and a channel;

a step of forming a gate insulating film on the silicon film;

a step of forming a gate electrode on the gate insulating film;

a step of forming a doped silicon film which will become source/drain regions;

a step of forming an interlayer insulating film over the gate electrode and the source/drain regions;

a step of opening the interlayer insulating film to form a contact hole; and

a step of forming an electrode and wiring at the contact hole,

wherein, as the liquid material, a high-order silane composition comprising a high-order silane formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.

4. A method of manufacturing a device, comprising:

a step of forming a dopant-containing semiconductor layer which will become source/drain regions, on an insulator;

a step of applying a liquid material on the insulator to form an applied film;

a step of converting the applied film into a silicon film by at least one of heating and light irradiating;

a step of patterning the silicon film to form an isolated region which will become a channel region connected to the source/drain regions;

a step of forming a gate insulating film over the channel and source/drain regions;

a step of forming a gate electrode on the gate insulating layer;

a step of forming an interlayer insulating film over the gate electrode;

a step of opening the interlayer insulating film to form a contact hole; and

a step of forming an electrode and wiring at the contact hole,

wherein, as the liquid material, a high-order silane composition comprising a high-order silane formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.

5. A method of manufacturing a device, comprising:

a step of forming a gate electrode on an insulator;

a step of forming a gate insulating film on the gate electrode;

a step of applying a liquid material on the insulator to form an applied film;

a step of converting the applied film into a silicon film by at least one of heating and light irradiating;

a step of forming a dopant-containing semiconductor layer which will become source/drain regions on the silicon film; and

a step of forming an electrode and wiring at the source/drain regions,

wherein, as the liquid material, a high-order silane composition comprising a high-order silane formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.