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Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition

  • US 20040029400A1
  • Filed: 07/31/2003
  • Published: 02/12/2004
  • Est. Priority Date: 02/11/1998
  • Status: Active Grant
First Claim
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1. A method for processing a substrate, comprising:

  • reacting an organosilicon compound selected from the group consisting of dimethylsilanediol, diphenylsilanediol, dimethyldimethoxysilane, diethyldiethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 1,3,5-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran to deposit a dielectric layer comprising silicon, oxygen, and carbon on the substrate; and

    depositing a layer comprising silicon, carbon, and hydrogen on the dielectric layer.

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