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Plasma processing apparatus and method

  • US 20040031566A1
  • Filed: 08/15/2002
  • Published: 02/19/2004
  • Est. Priority Date: 08/15/2002
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus comprising:

  • a processing chamber for processing a sample;

    a plasma generation power supply for generating a plasma within said processing chamber;

    a high-frequency power supply for applying a high frequency wave to a sample stage installed within said processing chamber; and

    control means for controlling said plasma generation power supply or said high-frequency power supply based on parameter settings for an output intensity and an output mode for each process step;

    wherein when said process steps are switched, said control means compares parameters for a current process step with those for a next process step and then switches either said output intensities or said output modes before switching said output modes or said output intensities, respectively.

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