CMOS image sensor array with black pixel using negative-tone resist support layer
First Claim
1. A method of producing image sensors comprising the steps of:
- producing a plurality of pixels on a substrate including a first pixel located adjacent to a second pixel, each of the pixels including a light-sensitive region;
forming a non-carbon-based support layer over the first and second pixels;
forming a carbon-based photosensitive resist layer on the support layer; and
removing portions of the support layer and the carbon-based photosensitive resist layer that are located over the second pixel such that a first portion of the support layer is positioned over the first pixel, and a second portion of the carbon-based photosensitive resist layer is positioned on the first portion.
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Accused Products
Abstract
A “black” pixel for measuring dark current is produced using carbon-based or pigment-based black photosensitive resist deposited on a support layer that is formed using negative-tone photosensitive resist, both being formed over the light sensitive portion of the black pixel. After an array of pixels is fabricated, a negative-tone resist layer is deposited on the upper insulator formed over the pixels, and a region of the negative-tone resist located over the black pixel is exposed using a first mask. A carbon-based resist layer is deposited on the negative-tone resist layer, and a region of the carbon-based resist located over the black pixel is exposed using a second mask. The negative-tone and carbon-based resists are then developed to remove portions of the layers not located over the black pixel.
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Citations
21 Claims
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1. A method of producing image sensors comprising the steps of:
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producing a plurality of pixels on a substrate including a first pixel located adjacent to a second pixel, each of the pixels including a light-sensitive region;
forming a non-carbon-based support layer over the first and second pixels;
forming a carbon-based photosensitive resist layer on the support layer; and
removing portions of the support layer and the carbon-based photosensitive resist layer that are located over the second pixel such that a first portion of the support layer is positioned over the first pixel, and a second portion of the carbon-based photosensitive resist layer is positioned on the first portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for producing an image sensor comprising:
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producing a plurality of pixels on a substrate including a first pixel located adjacent to a second pixel, each of the pixels including a light-sensitive region;
forming a negative-tone photosensitive resist layer over the first and second pixels;
forming a black photosensitive resist layer on the negative-tone photosensitive resist layer; and
removing portions of the negative-tone photosensitive resist layer and the black photosensitive resist layer that are located over the second pixel such that a support portion of the negative-tone photosensitive resist layer is positioned over the first pixel, and a light blocking portion of the black photosensitive resist layer is formed on the support portion. - View Dependent Claims (12, 13, 14, 15, 16)
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17. An image sensor comprising:
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a plurality of pixels including a black pixel having a light-sensitive region;
a support layer formed over the light-sensitive region of the black pixel, and a light blocking layer formed on the support layer, wherein the support layer comprises a negative-tone photosensitive resist material, and wherein the light blocking layer comprises a black photosensitive resist material. - View Dependent Claims (18, 19, 20, 21)
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Specification