Semiconductor memory device

• US 20040032779A1
• Filed: 07/08/2003
• Published: 02/19/2004
• Est. Priority Date: 07/08/2002
• Status: Active Grant

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Suzu, Takayuki
• Granted Patent: US 7,054,225 B2
• Time in Patent Office: Days
• US Class Current: 365/221
• CPC Class Codes: G11C 2207/104 Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs
• CPC Class Codes: G11C 2207/105 Aspects related to pads, pins or terminals
• CPC Class Codes: G11C 8/18 Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Abstract

A semiconductor memory device is comprised of a plurality of sense amplifiers. The sense amplifiers are arranged in two amplifier columns. The two amplifier columns are disposed between two cell columns of cell plates. An address circuitry, an ATD circuitry, and a delay circuitry are disposed between an input pin row and the two cell columns. An ATD pulse synthesizer Is disposed between the two amplifier columns and spaced a predetermined signal transmission path from the ATD and delay circuitries.

Claims

1. A semiconductor memory device comprising:

an input pin row including a plurality of input pins;

an output pin row including a plurality of output pins;

a memory cell array including a plurality of cell plates in a plurality of cell columns between the input and output pin rows;

a plurality of sense amplifiers in two amplifier columns disposed between the adjacent two of the plurality of cell-columns;

an address circuitry;

an address transition detector (ATD) circuitry to provide an ATD pulse upon detecting a transition in the address circuitry;

an ATD pulse synthesizer to provide a synthesized pulse in response to the ATD pulse;

an output circuitry; and

a delay circuitry to provide a sense amplifier data latch signal and an output data latch signal in response to the synthesized pulse from the ATD pulse synthesizer, at least the address, ATD and delay circuitries being disposed between the input pin row and the plurality of cell columns,

the ATD pulse synthesizer being disposed between the two amplifier columns and spaced a predetermined signal transmission path from the ATD and delay circuitries.

2. The semiconductor memory device as claimed in claim 1, further comprising:

an error correction code (ECC) circuitry disposed between the two amplifier columns together with the ATD pulse synthesizer, and the delay circuitry provides an ECC data latch signal.

3. The semiconductor memory device as claimed in claim 1 or 2, wherein said output circuitry is disposed between the two amplifier columns and between the ATD pulse synthesizer and the output pin row.

4. The semiconductor memory device as claimed in claim 1 or 2, wherein said output circuitry is disposed between the cell columns and the output pin row.

5. The semiconductor memory device as claimed in claim 1 or 2, wherein the device has write function.

6. The semiconductor memory device as claimed in claim 1 or 2, wherein the address, ATD and delay circuitries only are disposed in a site between the input pin row and the plurality of cell columns.

7. The semiconductor memory device as claimed in claim 1 or 2, wherein the number of the plurality of cell plates is four.

8. The semiconductor memory device as claimed in claim 1 or 2, wherein the output pin row includes at least one input pin.

9. The semiconductor memory device as claimed in claim 1 or 2,

wherein each of the plurality of cell columns include a plurality pairs of cell plates, and

further comprising;

a plurality of X-decoders, each disposed between the cell plates of one of the plurality of pairs;

a plurality of Y-select circuits, each disposed between an inner side of the cell plates of one of the plurality of pairs and the adjacent sense amplifier of one of the amplifier columns; and

a plurality of X-predecoders, each disposed adjacent an outer side of the cell plates of one of the plurality of pairs.

10. The semiconductor memory device as claimed in claim 1 or 2, wherein the memory cell array includes a plurality of horizontal digit lines, and a plurality of vertical word lines.