Patterning of nanostructures

• US 20040033679A1
• Filed: 05/23/2003
• Published: 02/19/2004
• Est. Priority Date: 05/24/2002
• Status: Active Grant

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Agnihotri, Vikrant, Anant, Vikas, Salomon, Ashley, DelHagen, Will, Jacobson, Joseph M., Griffith, Saul, Kong, David
• Granted Patent: US 8,093,144 B2
• Time in Patent Office: Days
• US Class Current: 438/510
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C23C 14/024 Deposition of sublayers, e.g. to promote adhesion of the coating C23C14/027 takes precedence
• CPC Class Codes: C23C 14/048 using irradiation by energy or particles
• CPC Class Codes: C23C 14/228 Gas flow assisted PVD deposition
• CPC Class Codes: C23C 16/047 using irradiation by energy or particles
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45555 applied in non-semiconductor technology
• CPC Class Codes: H01L 21/02225 characterised by the process for the formation of the insulating layer
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02351 treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 21/2633 for etching, e.g. sputteretching
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H10K 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
• CPC Class Codes: H10K 71/10 Deposition of organic active material
• CPC Class Codes: Y10S 977/888 : Shaping or removal of materials, e.g. etching
• CPC Class Codes: Y10S 977/891 : Vapor phase deposition

Abstract

A technique for forming nanostructures including a definition of a charge pattern on a substrate and introduction of charged molecular scale sized building blocks (MSSBBs) to a region proximate the charge pattern so that the MSSBBs adhere to the charge pattern to form the feature.

Claims

1. A method for forming a feature, the method comprising:

forming a charge pattern on a substrate, the charge pattern having a first type of charge; and

introducing a plurality of at least one of molecular-size scale and nanoscale building blocks to a region proximate the charge pattern, the building blocks having a second type of charge and adhering to the charge pattern to form the feature.

2. The method of claim 1, wherein the building blocks are selected from the group consisting of ions, nanoclusters, nanoparticles, and organic molecules.

3. The method of claim 2, wherein the building blocks comprise nanoclusters.

4. The method of claim 3, wherein the charge pattern is formed with an energy beam.

5. The method of claim 4, wherein the charge pattern is formed with a plurality of energy beams.

6. The method of claim 3, wherein the energy beam is at least one of an ion beam, an electron beam, and a photon beam.

7. The method of claim 3, further comprising the step of globally sintering the adhered nanoclusters.

8. The method of claim 7, wherein the sintered nanoclusters form a monolayer.

9. The method of claim 8, further comprising repeating the forming, introducing, and sintering steps to create a plurality of adjacent monolayers.

10. The method of claim 3, wherein the nanoclusters are less than 100 nm in overall dimension.

11. The method of claim 3, wherein the nanoclusters are introduced by dusting.

12. The method of claim 3, wherein the nanoclusters are directed toward the substrate as a stream, such that the nanoclusters adhere only to the charge pattern.

13. The method of claim 3, further comprising:

controlling a velocity of the plurality of nanoclusters.

14. The method of claim 13, wherein the velocity of at least a portion of the plurality of nanoclusters is reduced in the region proximate the charge pattern.

15. The method of claim 13, wherein the velocity of at least a portion of the plurality of nanoclusters is controlled by an electric field.

16. The method of claim 15, wherein the electric field is alternating.

17. The method of claim 13, wherein the velocity of at least a portion of the plurality of nanoclusters is controlled by a magnetic field.

18. The method of claim 17, wherein the magnetic field is alternating.

19. The method of claim 13, wherein the velocity of at least a portion of the plurality of nanoclusters is controlled by a charged aperture disposed near the substrate.

20. The method of claim 2, wherein introducing the plurality of building blocks comprises introducing organic molecules.

21. The method of claim 3, wherein introducing the plurality of nanoclusters comprises introducing inorganic nanoclusters.

22. The method of claim 21, further comprising:

introducing a plurality of organic molecules to the region proximate the feature,

wherein the organic molecules adhere to the inorganic nanoclusters defining the feature.

23. The method of claim 3, wherein the first type of charge comprises a positive charge.

24. The method of claim 3, wherein the first type of charge comprises a negative charge.

25. The method of claim 3, wherein the second type of charge comprises a positive charge.

26. The method of claim 3, wherein the second type of charge comprises a negative charge.

27. The method of claim 3, wherein the second type of charge comprises a neutral charge.

28. The method of claim 3, wherein the charge pattern comprises a dot and at least one nanocluster adheres to the dot to form an initiation site for a nanowire.

29. The method of claim 28, wherein a plurality of nanoclusters adheres to the dot to form the initiation site.

30. The method of claim 28, wherein the first type of charge is selected from the group consisting of positive and negative charges.

31. The method of claim 28, further comprising:

introducing a precursor to a region proximate the initiation site to initiate growth of the nanowire.

32. A method for forming a structure, the method comprising:

defining a charge pattern by an energy beam; and

correcting an error in the charge pattern.

33. The method of claim 32, wherein correcting the error in the charge pattern comprises providing a feedback loop comparing a set of charge data to data corresponding to a desired charge pattern.

34. The method of claim 33, wherein the charge pattern comprises a first type of charge, the error comprises a misplaced charge, and correcting the error comprises discharging the error with a second beam having a second type of charge.

35. The method of claim 34, further comprising:

introducing a plurality of nanoclusters to a region proximate the charge pattern, the nanoclusters having the second type of charge and adhering to the charge pattern to define the structure,

wherein the error is corrected after the charge pattern is formed and before the plurality of nanoclusters is introduced.

36. The method of claim 34, wherein the beam comprises an electron beam.

37. The method of claim 34, wherein the beam comprises a ion beam.

38. The method of claim 33, wherein the error comprises a missing charge in the charge pattern and correcting the error comprises adding a charge to the charge pattern with the energy beam.

39. A method for forming a structure, the method comprising:

introducing a plurality of at least one of molecular-size scale and nanoscale building blocks onto a surface of a substrate to form the structure; and

correcting an error in the structure.

40. The method of claim 39, wherein correcting the error in the structure comprises providing a feedback loop comparing a set of charge data to data corresponding to a desired structure.

41. The method of claim 39, wherein correcting the error comprises performing an additive correction.

42. The method of claim 41, wherein correcting the error comprises depositing a charge on the substrate and introducing at least one additional building block to a region proximate the charge.

43. The method of claim 39, wherein correcting the error comprises performing a subtractive correction.

44. The method of claim 41, wherein performing the subtractive correction comprises removing a portion of the structure.

45. The method of claim 41, wherein removing the portion of the structure comprises removing the portion with a beam.

46. A method for forming a feature, the method comprising:

introducing a plurality of at least one of molecular-size scale and nanoscale building blocks to a region proximate a substrate; and

simultaneously scanning a pattern on the substrate with an energy beam,

wherein the energy beam causes a change in at least one physical property of at least a portion of the building blocks such that a probability of the portion of the building blocks adhering to the pattern scanned by the energy beam is increased.

47. The method of claim 46, wherein the energy beam comprises at least one of an electron beam and an ion beam.

48. The method of claim 46, wherein the change in the physical property is caused by a direct collision between the energy beam and the portion of the building blocks.

49. The method of claim 46, wherein the change in the physical property is caused by sintering.

50. The method of claim 49, wherein the energy beam sinters the portion of the nanoclusters by heating at least a portion of the substrate proximate the portion of the nanoclusters.

51. A method for forming a feature, the method comprising:

introducing a plurality of at least one of molecular-size scale and nanoscale building blocks to a region proximate a substrate; and

simultaneously scanning a pattern on the substrate with an energy beam,

wherein the energy beam and at least a portion of the nanoclusters interact by electrostatic interaction to form the feature on the substrate.

52. A method for creating a charge retention layer, the method comprising:

providing a substrate;

adsorbing a thin layer of a gas onto a surface of the substrate to create the charge retention layer; and

defining a charge pattern on the thin adsorbed layer.

53. The method of claim 52, wherein the thin layer comprises a thickness of one monolayer.

54. The method of claim 52, wherein the adsorbed gas is an inert gas.

55. The method of claim 54, wherein the inert gas is xenon.

56. The method of claim 52, wherein the inert gas is adsorbed at a low temperature.

57. The method of claim 52, wherein the adsorbed gas comprises a hydrocarbon vapor.

58. The method of claim 57, wherein adsorbing the hydrocarbon vapor comprises cracking and depositing the hydrocarbon vapor.

59. A method for forming a structure, the method comprising:

providing a substrate;

defining a first region of the substrate having a charge of a first type;

defining a second region of the substrate having a charge of a second type; and

dusting the first and second substrate regions with a plurality of at least one of molecular-size scale and nanoscale building blocks having a charge of the second type,

wherein the building blocks are repelled from the first substrate region and attracted to the second substrate region.

60. The method of claim 59, further comprising:

forming a charge pattern on the substrate, the charge pattern having the second type of charge; and

introducing a second plurality of at least one of molecular-size scale and nanoscale building blocks to a region proximate the charge pattern, the nanoclusters having the first type of charge, the nanoclusters adhering to the charge pattern.

61. A method for forming a feature, the method comprising:

creating a virtual mask on a substrate; and

depositing a monolayer on a region of the substrate on a region of the substrate substantially free of the virtual mask to form the feature.

62. The method of claim 61, wherein creating the virtual mask comprises scanning an energy beam in a pattern on the substrate.

63. The method of claim 62, wherein the energy beam comprises an ion beam.

64. The method of claim 61, wherein depositing the monolayer comprises atomic layer deposition.

65. The method of claim 61, further comprising:

defining a nanostructure on the substrate; and

defining a gap in the nanostructure, the gap initially having a first length,

wherein the monolayer is deposited over the nanostructure and the gap, and after the deposition of the monolayer the gap comprises a second length, the second length being less than the first length.

66. A system comprising:

a deposition chamber;

disposed within the deposition chamber, a beam source arranged to form a charge pattern on a substrate placed within the deposition chamber; and

a molecular size-scale building block (MSSBB) source disposed outside the deposition chamber, the MSSBB source arranged to introduce a plurality of at least one of MSSBBs and nanoscale building blocks to a region proximate the charge pattern,

wherein the deposition chamber, beam source, and MSSBB source are capable of being maintained at a vacuum.

67. The system of claim 66, further comprising:

a feedback monitoring system in electrical communication with the beam source and the MSSBB source, for correcting errors caused by at least one of the beam source and the MSSBB source.

68. A system comprising:

a deposition chamber;

disposed within the deposition chamber, a beam source arranged to form a charge pattern on a substrate placed within the deposition chamber;

a molecular size-scale building block (MSSBB) source disposed outside the deposition chamber, the MSSBB source arranged to introduce a plurality of at least one of MSSBBs and nanoscale building blocks to a mass selector; and

in fluid communication with the MSSBB source, a mass selector for introducing a plurality of at least one of MSSBBs and nanoscale building blocks having a predetermined mass and charge to a region proximate the charge pattern,

wherein the deposition chamber, beam source, MSSBB source, and mass selector are capable of being maintained at a vacuum.

69. The system of claim 68, further comprising:

a feedback monitoring system in electrical communication with the beam source, the MSSBB source, and the mass selector, for correcting errors caused by at least one of the beam source, the MSSBB source, and the mass selector.