Methods for forming openings in doped silicon dioxide

• US 20040033684A1
• Filed: 08/13/2002
• Published: 02/19/2004
• Est. Priority Date: 08/13/2002
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Li, Li
• Granted Patent: US 7,541,270 B2
• Time in Patent Office: Days
• US Class Current: 438/637
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76897 Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step self-aligned silicidation on field effect transistors H01L29/665

Abstract

Methods of forming openings in doped silicon dioxide layers and of forming self aligned contact holes are provided. The openings are generally etched in a plasma processing chamber. An etchant gas mixture comprising at least one fluorocarbon gas, at least one hydrogen containing gas, and at least one inert gas is used to strike a plasma. The plasma etches the opening in the doped oxide layer, and the etch is relatively highly selective of the doped oxide layer and relatively minimally selective of undoped oxide and silicon nitride layers. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that is will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).

Claims