×

Method and apparatus for measuring fault diagnostics on insulated gate bipolar transistor converter circuits

  • US 20040034508A1
  • Filed: 05/28/2003
  • Published: 02/19/2004
  • Est. Priority Date: 05/28/2002
  • Status: Active Grant
First Claim
Patent Images

1. A fault determination method for assessing a condition of a power converter circuit, the power converter circuit comprising a number N of pairs of insulated gate bipolar transistors (“

  • IGBTs”

    ), each pair of IGBTs comprising an upper IGBT coupled to a first polarity of a DC power source and a lower IGBT coupled to a second polarity of the DC power source, the method comprising;

    selectively placing in a conducting state at least one of the upper IGBTs during a first time and selectively placing in a conducting state at least one of the lower IGBTs during the first time; and

    determining a set of IGBT operational states in response to at least one of a magnitude and a direction of a current through a load between the at least one upper and the at least one lower IGBT placed in the conducting state during the first time.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×