Integrated gyroscope of semiconductor material with at least one sensitive axis in the sensor plane
First Claim
1. An integrated gyroscope, including an acceleration sensor comprising:
- a driving assembly;
a sensitive mass extending in a first direction and a second direction, said sensitive mass being moved by said driving assembly in said first direction; and
a capacitive sensing electrode, facing said sensitive mass;
wherein said acceleration sensor has a rotation axis parallel to said second direction, and said sensitive mass is sensitive to forces acting in a third direction perpendicular to said first and second directions.
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Accused Products
Abstract
An integrated gyroscope, including an acceleration sensor formed by: a driving assembly; a sensitive mass extending in at least one first and second directions and being moved by the driving assembly in the first direction; and by a capacitive sensing electrode, facing the sensitive mass. The acceleration sensor has an rotation axis parallel to the second direction, and the sensitive mass is sensitive to forces acting in a third direction perpendicular to the other directions. The capacitive sensing electrode is formed by a conductive material region extending underneath the sensitive mass and spaced therefrom by an air gap.
26 Citations
24 Claims
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1. An integrated gyroscope, including an acceleration sensor comprising:
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a driving assembly;
a sensitive mass extending in a first direction and a second direction, said sensitive mass being moved by said driving assembly in said first direction; and
a capacitive sensing electrode, facing said sensitive mass;
wherein said acceleration sensor has a rotation axis parallel to said second direction, and said sensitive mass is sensitive to forces acting in a third direction perpendicular to said first and second directions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A device, comprising:
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a semiconductor substrate;
a first electrode formed in a first layer of the substrate; and
a first sensing mass, mechanically coupled to the substrate and capacitively coupled to the first electrode, formed in a second layer of the substrate, the first sensing mass being configured to oscillate along a first axis lying in a first plane parallel to the first layer, and further configured to move along a second axis perpendicular to the first layer in response to angular movements of the substrate about a third axis perpendicular to the first axis and lying in the first plane. - View Dependent Claims (19, 20)
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21. A device, comprising:
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a semiconductor substrate;
a first electrode formed in a first layer of the substrate;
a first sensing mass, mechanically coupled to the substrate and capacitively coupled to the first electrode, formed in a second layer of the substrate, the first sensing mass being configured to oscillate along a first axis lying in a first plane parallel to the first layer, and further configured to oscillate about a second axis lying in the first layer in response to forces acting along a third axis perpendicular to the first and second axes. - View Dependent Claims (22, 23)
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24. A method, comprising:
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oscillating a sensing mass in a first axis lying in a first plane relative to a surface of a semiconductor material body, the sensing mass mechanically couple to the body;
moving the semiconductor material body about a second axis perpendicular to the first axis and lying in the same plane; and
detecting the movement of the semiconductor material body by detecting changes in a capacitive coupling between the sensing mass and an electrode formed on the surface of the semiconductor body, due to movements of the body in an axis perpendicular to the first plane.
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Specification