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Multi-gate carbon nano-tube transistors

  • US 20040036128A1
  • Filed: 03/28/2003
  • Published: 02/26/2004
  • Est. Priority Date: 08/23/2002
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    source and drain conductors on the substrate;

    a semiconducting carbon nanotube interconnecting the source and the drain conductors, the semiconducting carbon nanotube, in at least one cross-section transverse through an elongate axis of the semiconducting carbon nanotube, having opposing sides;

    a plurality of gate dielectric portions, each gate dielectric portion being adjacent to one of the opposing sides of the semiconducting carbon nanotube; and

    a plurality of gate electrodes, in the cross-section, being electrically disconnected from one another, at least one gate electrode being adjacent to each of the insulators, the gate electrodes located such that when a voltage is applied to the gate electrodes, the source and the drain conductors are electrically coupled through the semiconducting carbon nanotube.

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