Packaged die on PCB with heat sink encapsulant and methods
First Claim
1. A semiconductor assembly comprising:
- a substrate;
a semiconductor chip having a first surface and a second surface, at least a portion of the first surface attached to a portion of said substrate and electrically connected to a portion of said substrate;
a barrier material adhered to a periphery of the second surface of said semiconductor chip substantially forming a wall, said barrier material substantially contacting a portion of said substrate, the barrier material having a first thermal conductivity;
a recess defined by said wall about said periphery of the semiconductor chip second surface; and
a heat-dissipating material disposed within said recess, the heat dissipating material having a second thermal conductivity different than that of the first thermal conductivity of the barrier material.
5 Assignments
0 Petitions
Accused Products
Abstract
An apparatus and a method for providing a heat sink on an upper surface of a semiconductor chip by placing a heat-dissipating material thereon which forms a portion of a glob top. The apparatus comprises a semiconductor chip attached to and in electrical communication with a substrate. A barrier glob top material is applied to the edges of the semiconductor chip on the surface (“opposing surface”) opposite the surface attached to the substrate to form a wall around a periphery of the opposing surface of the semiconductor chip wherein the barrier glob top material also extends to contact and adhere to the substrate. The wall around the periphery of the opposing surface of the semiconductor chip forms a recess. A heat-dissipating glob top material is disposed within the recess to contact the opposing surface of the semiconductor chip.
-
Citations
31 Claims
-
1. A semiconductor assembly comprising:
-
a substrate;
a semiconductor chip having a first surface and a second surface, at least a portion of the first surface attached to a portion of said substrate and electrically connected to a portion of said substrate;
a barrier material adhered to a periphery of the second surface of said semiconductor chip substantially forming a wall, said barrier material substantially contacting a portion of said substrate, the barrier material having a first thermal conductivity;
a recess defined by said wall about said periphery of the semiconductor chip second surface; and
a heat-dissipating material disposed within said recess, the heat dissipating material having a second thermal conductivity different than that of the first thermal conductivity of the barrier material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. An assembly method for a semiconductor assembly comprising:
-
providing a substrate;
providing a semiconductor chip having a first surface and a second surface;
attaching at least a portion of said semiconductor chip first surface to at least a portion of said substrate;
forming an electrical connection between said semiconductor chip and said substrate;
forming a wall substantially around a periphery of the second surface of said semiconductor chip using a barrier material, said wall around the periphery of said second surface of said semiconductor chip defining a recess, said barrier material having a first thermal conductivity;
extending said barrier material for contacting said substrate; and
disposing a heat-dissipating material substantially within said recess, the dissipating material having a second thermal conductivity different than that of the first thermal conductivity of the barrier material. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
-
17. A semiconductor assembly comprising:
-
a semiconductor chip having a first surface and a second surface, the first surface attached to at least a portion of a substrate and electrically connected to a portion of the substrate;
a barrier material adhered to a periphery of the second surface of said semiconductor chip substantially forming a wall, a portion of said wall extending beyond said semiconductor chip forming a recess located above said second surface of said semiconductor chip, the barrier material substantially extending to and contacting portions of said substrate, the barrier material having a first thermal conductivity; and
a heat-dissipating material disposed within said recess, the heat dissipating material having a second thermal conductivity different than the first thermal conductivity of the barrier material. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
-
-
25. A method of making a semiconductor assembly comprising:
-
providing a substrate;
providing a plurality of semiconductor chips, each semiconductor chip of said plurality having a first surface and a second surface;
attaching a portion of said first surface of said each semiconductor chip to a portion of said substrate;
disposing an underfill material substantially between said substrate and said each semiconductor chip;
forming an electrical connection between said each semiconductor chip and said substrate;
forming a wall substantially around a periphery of second surface of each said semiconductor chip using a barrier material, said wall and said second surface of said each semiconductor chip defining a recess, the barrier material having a first thermal conductivity;
extending said barrier material for contacting and adhering to said substrate; and
disposing a heat-dissipating material substantially within said recess, the heat dissipating material having a second thermal conductivity different than that of the first thermal conductivity of the barrier material. - View Dependent Claims (26, 27, 28, 29, 30, 31)
-
Specification