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Thin film magnetic memory device conducting read operation and write operation in parallel

  • US 20040037110A1
  • Filed: 01/30/2003
  • Published: 02/26/2004
  • Est. Priority Date: 08/23/2002
  • Status: Active Grant
First Claim
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1. A thin film magnetic memory device, comprising:

  • a memory cell array including a plurality of magnetic memory cells each holding magnetically written storage data;

    a first port for receiving a write address indicating a write selected memory cell which is selected for write operation in said memory cell array, and write data to said write selected memory cell;

    a second port for receiving a read address indicating a read selected memory cell which is selected for read operation in said memory cell array, and outputting read data from said read selected memory cell; and

    peripheral circuitry for conducting read operation and write operation in parallel in said memory cell array based on said read address and said write address, respectively.

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