Methods of forming cobalt silicide contact structures including sidewall spacers for electrical isolation and contact structures formed thereby
First Claim
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1. A method of fabricating a contact structure, comprising:
- forming an interlayer dielectric on a substrate having a semiconductive region;
forming a contact hole in the interlayer dielectric to expose the semiconductive region;
forming spacers on inner sidewalls of the contact hole;
forming a cobalt silicide layer at a bottom of the contact hole; and
forming a conductive layer to fill the contact hole.
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Abstract
A contact structure is formed by forming an interlayer dielectric on a substrate having a semiconductive region. A contact hole is formed in the interlayer dielectric to expose the semiconductive region. A conductive structure is formed adjacent to the contact hole. Spacers are formed on inner sidewalls of the contact hole. A cobalt silicide layer is formed at a bottom of the contact hole. The spacers are configured to electrically isolate the cobalt silicide layer from the conductive structure. A conductive layer is formed on the cobalt silicide layer in the contact hole.
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Citations
19 Claims
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1. A method of fabricating a contact structure, comprising:
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forming an interlayer dielectric on a substrate having a semiconductive region;
forming a contact hole in the interlayer dielectric to expose the semiconductive region;
forming spacers on inner sidewalls of the contact hole;
forming a cobalt silicide layer at a bottom of the contact hole; and
forming a conductive layer to fill the contact hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A contact structure comprising:
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an interlayer dielectric disposed on a substrate and having a contact hole formed therein that exposes a semiconductiv region of the substrate;
a cobalt silicide layer that is disposed at a bottom of the contact hole;
a pair of spacers that are respectively disposed on opposing sidewalls of the contact hole; and
a conductive layer that is disposed on the cobalt silicide layer in the contact hole. - View Dependent Claims (17, 18, 19)
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Specification