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Methods of forming cobalt silicide contact structures including sidewall spacers for electrical isolation and contact structures formed thereby

  • US 20040038517A1
  • Filed: 06/30/2003
  • Published: 02/26/2004
  • Est. Priority Date: 08/20/2002
  • Status: Abandoned Application
First Claim
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1. A method of fabricating a contact structure, comprising:

  • forming an interlayer dielectric on a substrate having a semiconductive region;

    forming a contact hole in the interlayer dielectric to expose the semiconductive region;

    forming spacers on inner sidewalls of the contact hole;

    forming a cobalt silicide layer at a bottom of the contact hole; and

    forming a conductive layer to fill the contact hole.

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