Manufacture method for semiconductor device with patterned film of ZrO2 or the like
First Claim
Patent Images
1. A semiconductor device manufacture method comprising steps of:
- (a1) forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;
(a2) covering a partial surface area of the insulating film with a mask pattern;
(a3) by using the mask pattern as a mask, implanting ions into a region of the insulating film not covered with the mask pattern to give damages to the insulating film; and
(a4) by using the mask pattern as a mask, etching a portion of the insulating film.
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Abstract
An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.
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Citations
11 Claims
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1. A semiconductor device manufacture method comprising steps of:
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(a1) forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;
(a2) covering a partial surface area of the insulating film with a mask pattern;
(a3) by using the mask pattern as a mask, implanting ions into a region of the insulating film not covered with the mask pattern to give damages to the insulating film; and
(a4) by using the mask pattern as a mask, etching a portion of the insulating film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device manufacture method comprising steps of:
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(b1) forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;
(b2) covering a partial surface area of the insulating film with a mask pattern;
(b3) by using the mask pattern as a mask, transforming a region of the insulating film not covered with the mask pattern to an amorphous state; and
(b4) by using the mask pattern as a mask, etching the insulating film transformed to the amorphous state.
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8. A semiconductor device manufacture method comprising steps of:
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(c1) forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;
(c2) covering a partial surface area of the insulating film with a mask pattern;
(c3) by using the mask pattern as a mask, exposing a region of the insulating film not covered with the mask pattern to one plasma selected from a group consisting of nitrogen plasma, argon plasma and ammonia plasma; and
(c4) by using the mask pattern as a mask, etching a portion of the insulating film. - View Dependent Claims (9)
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10. A semiconductor device manufacture method comprising steps of:
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forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;
forming a gate electrode on a partial surface area of the insulating film;
by using the gate electrode as a mask, implanting ions into a region of the insulating film not covered with the gate electrode to give damages to the insulating film;
by using the gate electrode as a mask, etching a portion of the gate insulating film; and
by using the gate electrode as a mask, implanting impurity ions into a surface layer of the semiconductor substrate on both sides of the gate electrode.
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11. A semiconductor device manufacture method comprising steps of:
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forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;
forming a gate electrode on a partial surface area of the insulating film;
by using the gate electrode as a mask, exposing a region of the insulating film not covered with the gate electrode to one plasma selected from a group consisting of nitrogen plasma, argon plasma and ammonia plasma;
by using the gate electrode as a mask, etching a portion of the gate insulating film; and
by using the gate electrode as a mask, implanting impurity ions into a surface layer of the semiconductor substrate on both sides of the gate electrode.
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Specification