Manufacture method for semiconductor device with patterned film of ZrO2 or the like

• US 20040038555A1
• Filed: 08/05/2003
• Published: 02/26/2004
• Est. Priority Date: 08/08/2002
• Status: Active Grant

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Irino, Kiyoshi, Sugita, Yoshihiro, Morisaki, Yusuke, Xiao, Shiqin, Ohba, Takayuki
• Granted Patent: US 6,998,303 B2
• Time in Patent Office: Days
• US Class Current: 438/785
• CPC Class Codes: H01L 21/02263 deposition from the gas or vapour phase
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/823857 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.

Claims

1. A semiconductor device manufacture method comprising steps of:

(a1) forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;

(a2) covering a partial surface area of the insulating film with a mask pattern;

(a3) by using the mask pattern as a mask, implanting ions into a region of the insulating film not covered with the mask pattern to give damages to the insulating film; and

(a4) by using the mask pattern as a mask, etching a portion of the insulating film.

2. A semiconductor device manufacture method according to claim 1, wherein the step (a3) implants ions into the insulating film, the ions being ions of an element not generating carriers when the ions are implanted into the semiconductor substrate.

3. A semiconductor device manufacture method according to claim 1, wherein the step (a3) implants ions into the insulating film, the ions being ions of an element selected from a group consisting of silicon, germanium, argon and xenon.

4. A semiconductor device manufacture method according to claim 1, wherein the step (a4) etches the insulating film by using sulfuric acid or mixture liquid of sulfuric acid and hydrogen peroxide.

5. A semiconductor device manufacture method according to claim 2, wherein the step (a4) etches the insulating film by using sulfuric acid or mixture liquid of sulfuric acid and hydrogen peroxide.

6. A semiconductor device manufacture method according to claim 3, wherein the step (a4) etches the insulating film by using sulfuric acid or mixture liquid of sulfuric acid and hydrogen peroxide.

7. A semiconductor device manufacture method comprising steps of:

(b1) forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;

(b2) covering a partial surface area of the insulating film with a mask pattern;

(b3) by using the mask pattern as a mask, transforming a region of the insulating film not covered with the mask pattern to an amorphous state; and

(b4) by using the mask pattern as a mask, etching the insulating film transformed to the amorphous state.

8. A semiconductor device manufacture method comprising steps of:

(c1) forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;

(c2) covering a partial surface area of the insulating film with a mask pattern;

(c3) by using the mask pattern as a mask, exposing a region of the insulating film not covered with the mask pattern to one plasma selected from a group consisting of nitrogen plasma, argon plasma and ammonia plasma; and

(c4) by using the mask pattern as a mask, etching a portion of the insulating film.

9. A semiconductor device manufacture method according to claim 8, wherein the step (c4) etches the insulating film by using one etchant selected from a group consisting of sulfuric acid, mixture liquid of sulfuric acid and hydrogen peroxide, fluoric acid and phosphorous acid.

10. A semiconductor device manufacture method comprising steps of:

forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;

forming a gate electrode on a partial surface area of the insulating film;

by using the gate electrode as a mask, implanting ions into a region of the insulating film not covered with the gate electrode to give damages to the insulating film;

by using the gate electrode as a mask, etching a portion of the gate insulating film; and

by using the gate electrode as a mask, implanting impurity ions into a surface layer of the semiconductor substrate on both sides of the gate electrode.

11. A semiconductor device manufacture method comprising steps of:

forming an insulating film made of zirconia or hafnia over a surface of a semiconductor substrate;

forming a gate electrode on a partial surface area of the insulating film;

by using the gate electrode as a mask, exposing a region of the insulating film not covered with the gate electrode to one plasma selected from a group consisting of nitrogen plasma, argon plasma and ammonia plasma;

by using the gate electrode as a mask, etching a portion of the gate insulating film; and

by using the gate electrode as a mask, implanting impurity ions into a surface layer of the semiconductor substrate on both sides of the gate electrode.