Oxalic acid as a semiaqueous cleaning product for copper and dielectrics

• US 20040038840A1
• Filed: 04/24/2003
• Published: 02/26/2004
• Est. Priority Date: 04/24/2002
• Status: Abandoned Application

• Current Assignee: Robert J. Small, Shihying Lee
• Original Assignee: Robert J. Small, Shihying Lee
• Inventors: Small, Robert J., Lee, Shihying
• Application Number:
  US10/421,706
• Publication Number:
  US 20040038840A1
• Time in Patent Office: Days
• US Class Current: 510/202
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/0073 Anticorrosion compositions
• CPC Class Codes: C11D 3/2082 Polycarboxylic acids-salts thereof
• CPC Class Codes: C11D 3/30 Amines; Substituted amines ; Quaternized amines
• CPC Class Codes: C11D 7/10 Salts
• CPC Class Codes: C11D 7/265 Carboxylic acids or salts thereof
• CPC Class Codes: C11D 7/32 containing nitrogen
• CPC Class Codes: C11D 7/3209 Amines or imines with one to four nitrogen atoms; Quaternized amines
• CPC Class Codes: C11D 7/3218 Alkanolamines or alkanolimines
• CPC Class Codes: G03F 7/425 containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers
• CPC Class Codes: H01L 21/02093 Cleaning of porous materials

Abstract

The present invention provides a semiaqueous cleaning composition for use with aluminum, copper, and low-k substrates, the cleaning composition comprising between about 1% to about 30% oxalic acid dihydrate, between about 0.1% and about 30% of an amine, and water, wherein the cleaning composition contains less than about 0.5% fluorine-containing compounds and less than 0.5% peroxides.

Claims

1. A semiaqueous cleaning composition for use with aluminum, copper, and low-k substrates, the cleaning composition comprising between about 1% to about 30% oxalic acid dihydrate, between about 0.1% and about 30% of an amine, and water, wherein the cleaning composition contains less than about 0.5% fluorine-containing compounds and less than 0.5% peroxides.

2. The semiaqueous cleaning composition of claim 1 additionally comprising a second organic acid, an inorganic acid, or mixture thereof, wherein the pH of the composition is between about 2 and 12.

3. The semiaqueous cleaning composition of claim 2 wherein the organic acid is selected from dicarboxylic, monocarboxylic, hydroxy-carboxylic, amino-carboxylic, sulfano-carboxylic, and amino-sulfano acids.

4. The semiaqueous cleaning composition of claim 1 additionally comprising at least one hydroxylamine.

5. The semiaqueous cleaning composition of claim 1 additionally comprising benzotriazole, thiourea, ammonium bisulfite, choline bisulfite, propylene glycol, glycerol, sorbitol, gelatine, starch, phosphoric acid, silicic acid polyethylene oxide, polyethylene imine, or mixture thereof in an amount sufficient to reduce etching of the substrate contacting the cleaner.

6. The semiaqueous cleaning composition of claim 1 additionally comprising at least one chelating agent, and comprises less than about 0.1% of organic solvents.

7. The semiaqueous cleaning composition of claim 1 wherein the chelating agent is selected from dicarboxylic acids, hydroxy-carboxylic acids, amino-carboxylic acids, diamine, polyalcohol, polyethylene oxide and polyamine/imine.

8. The semiaqueous cleaning composition of claim 1 additionally comprising between 350.01% and 1% of polyvinyl alcohol, polyethylene oxide, polyethylene imine, polyalcohol, polyether, polyamine/imine, or mixture thereof.

9. The semiaqueous cleaning composition of claim 1 further comprising between about 0.01% and about 10% of an oxygen scavenger.

10. The semiaqueous cleaning composition of claim 9 wherein the oxygen scavenger is a sulfite.

11. The semiaqueous cleaning composition of claim 1 wherein the oxalic acid dihydrate concentration is between about 2% and about 20%, and wherein the pH is between about 4 and 7.

12. The semiaqueous cleaning composition of claim 2 further comprising a second organic acid, wherein the total organic acid concentration is less than about 20% total organic acids, and wherein the oxalic acid dihydrate concentration is between about 4% and about 12%.

13. The semiaqueous cleaning composition of claim 12 wherein the second organic acid comprises citric acid, formic acid, or a mixture thereof.

14. The semiaqueous cleaning composition of claim 2 comprising between about 0.01% and about 6% of an inorganic acid.

15. The semiaqueous cleaning composition of claim 1 wherein the amines comprise one or more alkanolamines in am amount ranging from about 1% and about 15%.

16. The semiaqueous cleaning composition of claim 1 comprising between about 3% and about 15% of oxalic acid;

between about 3% and about 20% of a second organic acid;

between about 3% and about 30% of an amine; and

between about 1% and about 15% of a chelating agent.

17. The semiaqueous cleaning composition of claim 1 comprising about 3% to about 8% by weight oxalic acid dihydrate, about 22% to about 30% tetramethylammonium hydroxide, and about 64% to about 74% water.

18. The semiaqueous cleaning composition of claim 2 comprising about 2% to about 8% oxalic acid dihydrate;

about 7% to about 13% formic acid;

about 1% to about 15% of ammonium hydroxide, an amine, or mixture thereof; and

about 72% to about 90% water.

19. The semiaqueous cleaning composition of claim 1 which comprises from about 83 to about 95% water;

from about 2 to about 10% of oxalic acid dihydrate; and

from about 1 to about 10% monoethanolamine.

20. The semiaqueous cleaning composition of claim 1 which comprises from about 83 to about 95 parts water;

from about 2 to about 10 parts of oxalic acid dihydrate;

from about 1 to about 10 parts monoethanolamine, and from about 0.1 to about 4 parts of a sulfite.

21. The semiaqueous cleaning composition of claim 1 which comprises from about 87% to about 98% water;

from about 1% to about 6% parts of oxalic acid dihydrate; and

from about 1% to about 7% of a substituted or unsubstituted amine.

22. The semiaqueous cleaning composition of claim 1 which comprises from about 5% to about 15% oxalic acid dihydrate, from about 5% to about 15% of choline, and from about 70 parts to about 90 parts water, wherein the pH of this composition is between about 3 and about 8.

23. The semiaqueous cleaning composition of claim 1 which comprises about 7% to about 13% of oxalic acid dihydrate, about 5% to about 13% tetramethylammonium hydroxide, and between 0% to about 5% of a sulfite.

24. The semiaqueous cleaning composition of claim 1 which comprises about 8 to about 12% oxalic acid dihydate;

about 3 to about 7% wt % tetramethylammonium hydroxide; and

about 80 to about 90% water.

26. The semiaqueous cleaning composition of claim 1 which comprises about 87 to about 94% water;

about 3 to about 7% oxalic acid dihydrate;

about 3 to about 7% monoethanolamine, and about 0.1 to about 4% of a sulfite salt.

27. The semiaqueous cleaning composition of claim 1 wherein the amine comprises diglycolamine.

28. The semiaqueous cleaning composition of claim 2 wherein the second organic acid comprises citric acid, and additionally comprising from about 0.01% to about 0.4% of a fluoride ion, wherein the pH of the composition is between about 4 and about 10.

29. The semiaqueous cleaning composition of claim 1 comprising between about 2 and about 9% oxalic acid dihydrate, between about 2 and about 15% formic acid, between about 0.5 and about 5% ammonium hydroxide, and between about 71 and about 95% water.

30. A method of cleaning a semiconductor substrate comprising:

contacting the substrate with a semiaqueous cleaning composition of claim 1 for between about 5 minutes and about 60 minutes and at a temperature of between about 20 C to about 85 C; and

rinsing the cleaned substrate to remove the cleaning composition.

31. A method of cleaning a semiconductor substrate comprising:

contacting the substrate with a semiaqueous cleaning composition of claim 2 for between about 5 minutes and about 60 minutes and at a temperature of between about 20 C to about 85 C; and

rinsing the cleaned substrate to remove the cleaning composition.

25. A semiaqueous cleaning composition for use with aluminum, copper, and low-k substrates, the cleaning composition comprising between about 7% to about 13% oxalic acid dihydrate, about 10% to about 15% tetramethylammonium hydroxide, and about 65% to about 85% water.

32. A method of cleaning a semiconductor substrate comprising:

contacting the substrate with a semiaqueous cleaning composition comprising between about 7% to about 13% oxalic acid dihydrate, about 2% to about 8% tetramethylammonium hydroxide, and about 80% to about 90% water for between about 5 minutes and about 60 minutes and at a temperature of between about 20 C to about 85 C; and

rinsing the cleaned substrate to remove the cleaning composition.

33. A method of cleaning a semiconductor substrate comprising:

contacting the substrate with a semiaqueous cleaning composition comprising between about 1% to about 30% oxalic acid dihydrate, between about 0.1% and about 10% of ammonia hydroxide, and water for between about 5 minutes and about 60 minutes and at a temperature of between about 20 C to about 85 C; and

rinsing the cleaned substrate to remove the cleaning composition.

34. A method of cleaning a semiconductor substrate comprising:

contacting the substrate with a semiaqueous cleaning composition comprising between about 1% to about 30% oxalic acid dihydrate, between about 0.1% and about 25% of hydroxyamines or salts thereof, and water, wherein the cleaning composition contains less than about 0.5% fluorine-containing compounds and less than 0.5% peroxides for between about 5 minutes and about 60 minutes and at a temperature of between about 20 C to about 85 C; and

rinsing the cleaned substrate to remove the cleaning composition.

35. A method of cleaning a semiconductor substrate comprising:

contacting the substrate with a semiaqueous cleaning composition comprising about 3% to about 15% oxalic acid dihydrate, wherein the pH of the composition is between about 1 and about 12, for between about 5 minutes and about 60 minutes and at a temperature of between about 20 C to about 85 C; and

rinsing the cleaned substrate to remove the cleaning composition.