Semiconductor fabricating apparatus and method and apparatus for determining state of semiconductor fabricating process
First Claim
1. A semiconductor device fabrication apparatus for performing an etching process for a semiconductor wafer having a plurality of films formed on a surface thereof and disposed in a chamber, by using plasma generated in the chamber, the apparatus comprising:
- a display unit for displaying a change in light of multi-wavelength, the light coming from the surface of the semiconductor wafer during a predetermined period of the etching process; and
a unit of judging a state of the etching process in accordance with a displayed change amount of light of multi-wavelength.
1 Assignment
0 Petitions
Accused Products
Abstract
In a semiconductor device fabrication apparatus for performing an etching process for a semiconductor wafer having a plurality of films formed on a surface thereof and disposed in a chamber, by using plasma generated in the chamber, a change in light of multi-wavelength from the surface of the semiconductor wafer is measured during a predetermined period of the etching process, and a state of the etching process is judged from the displayed change amount of light of multi-wavelength.
-
Citations
5 Claims
-
1. A semiconductor device fabrication apparatus for performing an etching process for a semiconductor wafer having a plurality of films formed on a surface thereof and disposed in a chamber, by using plasma generated in the chamber, the apparatus comprising:
-
a display unit for displaying a change in light of multi-wavelength, the light coming from the surface of the semiconductor wafer during a predetermined period of the etching process; and
a unit of judging a state of the etching process in accordance with a displayed change amount of light of multi-wavelength.
-
-
2. A semiconductor device fabrication apparatus for performing an etching process for a semiconductor wafer having a plurality of films formed on a surface thereof and disposed in a-chamber, by using plasma generated in the chamber, the apparatus comprising:
-
a measuring unit for measuring light from a surface of the semiconductor wafer during a predetermined period during the etching process;
a display unit for displaying data of a change in light measured by said measuring unit during the predetermined period;
a calculation unit for calculating a state of the etching process by using the displayed data; and
a controller for controlling the etching process in accordance with a calculation result of said calculation unit.
-
-
3. A semiconductor device fabricating apparatus comprising:
-
a measuring instrument for detecting interference of light from a surface of a semiconductor wafer having a plurality of films formed on the surface thereof and being processed by generated plasma;
a display unit for displaying a change in interference of the light during a predetermined period of the plasma process; and
a judgement unit for judging a speed of the plasma process in accordance with a change with time of a wavelength of the light having a change in interference equal to or larger than a predetermined value.
-
-
4. A method of judging a process state of a semiconductor device, comprising:
-
a step of measuring interference of light from a surface of a semiconductor wafer having a plurality of films formed on the surface thereof and being processed by generated plasma; and
a step of determining a thickness of one of the plurality of films of the semiconductor wafer in accordance with a change with time of a wavelength of the light having a change in the measured light interference equal to or larger than a predetermined value.
-
-
5. A method of judging a process state of a semiconductor device, comprising:
-
a step of measuring a change in interference of light from a surface of a semiconductor wafer having a plurality of films formed on the surface thereof and being processed by generated plasma; and
a step of superposing data of interference of light detected from a plurality of semiconductor wafers, and determining a thickness of one of the plurality of films of the semiconductor wafer in accordance with a change with time of a wavelength of the light having a change in light interference obtained from the superposed data equal to or larger than a predetermined value.
-
Specification