Light-emitting device

• US 20040041159A1
• Filed: 08/29/2003
• Published: 03/04/2004
• Est. Priority Date: 09/02/2002
• Status: Active Grant

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Yuri, Masaaki, Ueda, Daisuke
• Granted Patent: US 7,078,737 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 24/20 Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01025 Manganese [Mn]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/0103 Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01049 Indium [In]
• CPC Class Codes: H01L 2924/01063 Europium [Eu]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/505 : characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An InGaN-based light-emitting diode that emits light in blue, for example, is mounted on a support substrate as a semiconductor light-emitting element, and a transparent film is fixed to the support substrate so as to cover the semiconductor light-emitting element. An electrode pattern is formed on an upper surface of the transparent film, and the electrode pattern is electrically connected to terminal electrodes of the semiconductor light-emitting element through, for example, through-holes. The transparent film can contain a phosphor excited by light emitted from the semiconductor light-emitting element. It is not necessary to perform wire bonding for connecting the semiconductor light-emitting element to the electrode pattern and sealing with a sealant.

Claims

1. A light-emitting device comprising:

a support substrate, a semiconductor light-emitting element mounted on the support substrate, a transparent film fixed to the support substrate so as to cover the semiconductor light-emitting element, and an electrode pattern formed on an upper surface of the transparent film, wherein the electrode pattern is electrically connected to terminal electrodes of the semiconductor light-emitting element.

2. The light-emitting device according to claim 1, wherein the transparent film contains a phosphor excited by light emitted from the semiconductor light-emitting element.

3. The light-emitting device according to claim 1, wherein a phosphor film containing a phosphor excited by light emitted from the semiconductor light-emitting element is formed on at least one surface of the transparent film.

4. The light-emitting device according to claim 3, wherein the phosphor film is formed on a surface of the transparent film on the semiconductor light-emitting element side.

5. The light-emitting device according to claim 1, wherein the support substrate has a concave portion, and the semiconductor light-emitting element is mounted in the concave portion.

6. The light-emitting device according to claim 5, wherein a side wall surface of the concave portion is formed so as to spread outwardly from a bottom portion toward the transparent film.

7. The light-emitting device according to claim 6, wherein an angle formed by the side wall surface of the concave portion and an upper surface of the support substrate is in a range of 30°

to 60°

.

8. The light-emitting device according to claim 1, wherein at least one of the terminal electrodes of the semiconductor light-emitting element is electrically connected to the support substrate or an electrode formed on the support substrate.

9. The light-emitting device according to claim 1, wherein a plurality of the semiconductor light-emitting elements are mounted in an array on the support substrate.

10. The light-emitting device according to claim 1, wherein the transparent film is fixed to the support substrate with an adhesive.

11. The light-emitting device according to claim 10, wherein the adhesive contains a phosphor excited by light emitted from the semiconductor light-emitting element.

12. The light-emitting device according to claim 1, wherein the support substrate is made of metal.

13. The light-emitting device according to claim 1, wherein resin is sealed in a space surrounded by the support substrate and the transparent film.

14. The light-emitting device according to claim 13, wherein the resin sealed in the space contains a phosphor excited by light emitted from the semiconductor light-emitting element.

15. The light-emitting device according to claim 13, wherein a refractive index of the resin sealed in the space is smaller than that of a light-emitting portion of the semiconductor light-emitting element and larger than that of the transparent film.

16. The light-emitting device according to claim 1, wherein gas is sealed in the space surrounded by the support substrate and the transparent film at a pressure lower than an atmospheric pressure.

17. The light-emitting device according to claim 1, wherein inactive gas is sealed in the space surrounded by the support substrate and the transparent film.

18. The light-emitting device according to claim 17, wherein the inactive gas is selected from the group consisting of nitrogen, argon, helium, and a mixture thereof.