Metal plating using seed film

• US 20040041194A1
• Filed: 08/29/2002
• Published: 03/04/2004
• Est. Priority Date: 08/29/2002
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Marsh, Eugene P.
• Granted Patent: US 6,861,355 B2
• Time in Patent Office: Days
• US Class Current: 257/306
• CPC Class Codes: C23C 16/0281 of metallic sub-layers C23C16/029 takes precedence
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45529 specially adapted for making a layer stack of alternating different compositions or gradient compositions
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: C25D 5/02 Electroplating of selected surface areas
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 21/4846 Leads on or in insulating or insulated substrates, e.g. metallisation H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 28/90 : having vertical extensions
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/12542 : More than one such component
• CPC Class Codes: Y10T 428/12611 : Oxide-containing component
• CPC Class Codes: Y10T 428/12861 : Group VIII or IB metal-base component
• CPC Class Codes: Y10T 428/12868 : Group IB metal-base component alternative to platinum group metal-base component [e.g., precious metal, etc.]
• CPC Class Codes: Y10T 428/12875 : Platinum group metal-base component
• CPC Class Codes: Y10T 428/265 : 1 mil or less

Abstract

A seed film and methods incorporating the seed film in semiconductor applications is provided. The seed film includes one or more noble metal layers, where each layer of the one or more noble metal layers is no greater than a monolayer. The seed film also includes either one or more conductive metal oxide layers or one or more silicon oxide layers, where either layer is no greater than a monolayer. The seed film can be used in plating, including electroplating, conductive layers, over at least a portion of the seed film. Conductive layers formed with the seed film can be used in fabricating an integrated circuit, including fabricating capacitor structures in the integrated circuit.

Claims

1. An electroplating method for use in fabricating an integrated circuit, the method comprising:

forming a seed film on at least a portion of a surface of a substrate assembly by atomic layer deposition, wherein the seed film comprises at least a noble metal and a conductive metal oxide; and

electroplating a conductive layer over at least a portion of the seed film.

2. The electroplating method of claim 1, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a predetermined amount of one or more noble metal containing precursors; and

providing a reactant for use in converting at least one of the one or more noble metal precursors to less than a monolayer of at least one noble metal of the one or more noble metal containing precursors.

3. The electroplating method of claim 1, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a predetermined amount of one or more noble metal containing precursors;

providing a reactant for use in converting at least one of the one or more noble metal precursors to less than a monolayer of at least one noble metal of the one or more noble metal containing precursors; and

oxidizing at least a portion of the monolayer of the at least one noble metal.

4. The electroplating method of claim 1, wherein the conductive metal oxide is at least one noble metal oxide selected from a group consisting of iridium oxide, ruthenium oxide, and rhodium oxide.

5. The electroplating method of claim 4, wherein the conductive metal oxide comprises rhodium oxide.

6. The electroplating method of claim 1, wherein the at least one noble metal comprises at least one noble metal selected from a group consisting of iridium, ruthenium, platinum, and rhodium.

7. The electroplating method of claim 6, wherein the at least one noble metal comprises platinum.

8. The electroplating method of claim 1, wherein forming a seed film comprises forming the seed film with a thickness of no less than 20 angstroms and no greater than 500 angstroms.

9. The electroplating method of claim 1, wherein electroplating a conductive layer comprises forming at least a portion of an electrode of a capacitor structure using the seed film.

10. The electroplating method of claim 1, wherein electroplating a conductive layer over the seed film comprises:

chemical vapor depositing conductive material over at least a portion of the seed film, and

electroplating the conductive layer over the conductive material and the seed film.

11. The electroplating method of claim 1, wherein the surface of the substrate assembly defines an opening, wherein the opening is a small high aspect ratio opening having a critical dimension of less than about 1 micron and an aspect ratio greater than about 1.

12. The electroplating method of claim 1, wherein electroplating the conductive layer comprises electroplating a conductive layer comprising platinum over at least a portion of the seed film.

13. An electroplating method for use in fabricating an integrated circuit, comprising:

forming a seed film on at least a portion of a surface of a substrate assembly by atomic layer deposition, wherein the seed film comprises at least a noble metal and an oxide material; and

electroplating a conductive layer over at least a portion of the seed film.

14. The electroplating method of claim 13, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a predetermined amount of one or more noble metal containing precursors; and

providing a reactant for use in converting at least one of the one or more noble metal precursors to less than a monolayer of at least one noble metal of the one or more noble metal precursors.

15. The electroplating method of claim 13, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises;

providing a Si containing precursor; and

providing a reactant for use in converting at least a portion of the Si containing precursor to less than a monolayer of silicon oxide.

16. The electroplating method of claim 13, wherein the at least one noble metal comprises at least one noble metal selected from a group consisting of iridium, ruthenium, platinum, and rhodium.

17. The electroplating method of claim 14, wherein the at least one noble metal comprises platinum.

18. The electroplating method of claim 13, wherein forming a seed film comprises forming the seed film with a thickness of no less than 20 angstroms and no greater than 500 angstroms.

19. The electroplating method of claim 13, wherein electroplating a conductive layer comprises forming at least a portion of an electrode of a capacitor structure using the seed film.

20. The electroplating method of claim 13, wherein electroplating a conductive layer over the seed film comprises:

chemical vapor depositing conductive material over at least a portion of the seed film, and

electroplating the conductive layer over the conductive material and the seed film.

21. The electroplating method of claim 13, wherein the surface of the substrate assembly defines an opening, wherein the opening is a small high aspect ratio opening having a critical dimension of less than about 1 micron and an aspect ratio greater than about 1.

22. The electroplating method of claim 13, wherein electroplating the conductive layer comprises electroplating a conductive layer comprising platinum over at least a portion of the seed film.

23. A plating method, comprising:

forming a seed film on a substrate assembly, wherein forming the seed layer comprises forming one or more noble metal layers and one or more conductive metal oxide layers on the substrate assembly, wherein each of the one or more noble metal layers and one or more conductive metal oxide layers is less than a monolayer; and

plating a conductive layer over at least a portion of the seed film.

24. The plating method of claim 23, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a predetermined amount of one or more noble metal containing precursors; and

providing a reactant for use in converting at least one of the one or more noble metal precursors to less than a monolayer of at least one noble metal of the one or more noble metal containing precursors.

25. The plating method of claim 23, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a predetermined amount of one or more noble metal containing precursors;

providing a reactant for use in converting at least one of the one or more noble metal precursors to less than a monolayer of at least one noble metal of the one or more noble metal containing precursors; and

oxidizing at least a portion of the monolayer of the at least one noble metal.

26. The plating method of claim 23, wherein the conductive metal oxide is at least one noble metal oxide selected from a group consisting of iridium oxide, ruthenium oxide, and rhodium oxide.

27. The plating method of claim 26, wherein the conductive metal oxide comprises rhodium oxide.

28. The plating method of claim 23, wherein the at least one noble metal comprises at least one noble metal selected from a group consisting of iridium, ruthenium, platinum, and rhodium.

29. The plating method of claim 28, wherein the at least one noble metal comprises platinum.

30. The plating method of claim 23, wherein forming a seed film comprises forming the seed film with a thickness of no less than 20 angstroms and no greater than 500 angstroms.

31. The plating method of claim 24, wherein electroplating a conductive layer comprises forming at least a portion of an electrode of a capacitor structure using the seed film.

32. The plating method of claim 23, wherein electroplating a conductive layer over the seed film comprises:

chemical vapor depositing conductive material over at least a portion of the seed film, and

electroplating the conductive layer over the conductive material and the seed film.

33. The plating method of claim 23, wherein the surface of the substrate assembly defines an opening, wherein the opening is a small high aspect ratio opening having a critical dimension of less than about 1 micron and an aspect ratio greater than about 1.

34. The plating method of claim 23, wherein electroplating the conductive layer comprises electroplating a conductive layer comprising platinum over at least a portion of the seed film.

35. A plating method, comprising:

forming a seed film on a substrate assembly, wherein forming the seed layer comprises forming one or more noble metal layers and one or more silicon oxide layers on the substrate assembly, wherein each of the one or more noble metal layers and one or more silicon oxide layers is less than a monolayer; and

plating a conductive layer over at least a portion of the seed film.

36. The plating method of claim 35, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a predetermined amount of one or more noble metal containing precursors; and

providing a reactant for use in converting at least one of the one or more noble metal precursors to no greater than a monolayer of at least one noble metal of the one or more noble metal precursors.

37. The plating method of claim 35, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a Si containing precursor; and

providing a reactant for use in converting at least a portion of the Si containing precursor to less than a monolayer of silicon oxide.

38. The plating method of claim 35, wherein the at least one noble metal comprises at least one noble metal selected from a group consisting of iridium, ruthenium, platinum, and rhodium.

39. The plating method of claim 35, wherein the at least one noble metal comprise platinum.

40. The plating method of claim 35, wherein forming a seed film comprises forming the seed film with a thickness of no less than 20 angstroms and no greater than 500 angstroms.

41. The plating method of claim 35, wherein electroplating a conductive layer comprises forming at least a portion of an electrode of a capacitor structure using the seed film.

42. The plating method of claim 35, wherein wherein electroplating a conductive layer over the seed film comprises:

chemical vapor depositing conductive material over at least a portion of the seed film, and

electroplating the conductive layer over the conductive material and the seed film.

43. The plating method of claim 35, wherein the surface of the substrate assembly defines an opening, wherein the opening is a small high aspect ratio opening having a critical dimension of less than about 1 micron and an aspect ratio greater than about 1.

44. The plating method of claim 35, wherein electroplating the conductive layer comprises electroplating a conductive layer comprising platinum over at least a portion of the seed film.

45. A method for use in fabricating a capacitor, comprising:

forming a bottom electrode;

forming a dielectric layer on the bottom electrode; and

forming a top electrode on the dielectric layer, where forming at least one of the bottom electrode and top electrode comprises;

forming a seed film comprising one or more noble metal layers and one or more conductive metal oxide layers by atomic layer deposition, wherein each of the one or more noble metal layers and conductive metal oxide layers is not greater than a monolayer; and

plating at least one electrode material on at least a portion of the seed film.

46. The method of claim 45, wherein the bottom electrode is formed using the seed film.

47. The method of claim 45, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a predetermined amount of one or more noble metal containing precursors; and

providing a reactant for use in converting at least one of the one or more noble metal precursors to less than a monolayer of at least one noble metal of the one or more noble metal containing precursors.

48. The method of claim 45, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a predetermined amount of one or more noble metal containing precursors;

providing a reactant for use in converting at least one of the one or more noble metal precursors to less than a monolayer of at least one noble metal of the one or more noble metal containing precursors; and

oxidizing at least a portion of the monolayer of the at least one noble metal.

49. The method of claim 45, wherein conductive metal oxide is at least one noble metal oxide selected from a group consisting of iridium oxide, ruthenium oxide, and rhodium oxide.

50. The method of claim 49, wherein the conductive metal oxide comprises rhodium oxide.

51. The method of claim 45, wherein the at least one noble metal comprises at least one noble metal selected from a group consisting of iridium, ruthenium, platinum, and rhodium.

52. The method of claim 51, wherein the at least one noble metal comprises platinum.

53. The method of claim 45, wherein forming a seed film comprises forming the seed film with a thickness of no less than 20 angstroms and no greater than 500 angstroms.

54. The method of claim 45, wherein electroplating a conductive layer comprises forming at least a portion of an electrode of a capacitor structure using the seed film.

55. The method of claim 45, wherein electroplating a conductive layer over the seed film comprises:

chemical vapor depositing conductive material over at least a portion of the seed film, and

electroplating the conductive layer over the conductive material and the seed film.

56. The method of claim 45, wherein the capacitor comprises a substrate assembly that comprises a surface that defines an opening, wherein the opening is a small high aspect ratio opening having a critical dimension of less than about 1 micron and an aspect ratio greater than about 1.

57. The method of claim 45, wherein electroplating the conductive layer comprises electroplating a conductive layer comprising platinum over at least a portion of the seed film.

58. A method for use in fabricating a capacitor, comprising:

forming a bottom electrode;

forming a dielectric layer on the bottom electrode; and

forming a top electrode on the dielectric layer, wherein forming at least one of the bottom electrodes and top electrodes comprises;

forming a seed film comprising one or more noble metal layers and one or more oxide material layers by atomic layer deposition, wherein each of the one or more noble metal layers and oxide material layers is not greater than a monolayer; and

plating at least one electrode material on at least a portion of the seed layer.

59. The method of claim 58, wherein the bottom electrode is formed using the seed layer.

60. The method of claim 58, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a predetermined amount of one or more noble metal containing precursors; and

providing a reactant for use in converting at least one of the one or more noble metal precursors to less than a monolayer of at least one noble metal of the one or more noble metal containing precursors.

61. The method of claim 58, wherein forming a seed film comprises repeating one or more deposition cycles, wherein at least one of the one or more deposition cycles comprises:

providing a Si containing precursor; and

providing a reactant for use in converting at least a portion of the Si containing precursor to less than a monolayer of silicon oxide.

62. The method of claim 58, wherein the at least one noble metal comprises at least one noble metal selected from a group consisting of iridium, ruthenium, platinum, and rhodium.

63. The method of claim 62, wherein the at least one noble metal comprises platinum.

64. The method of claim 58, wherein forming a seed film comprises forming the seed film with a thickness of no less than 20 angstroms and no greater than 500 angstroms.

65. The method of claim 58, wherein plating a noble metal comprises forming at least a portion of an electrode of a capacitor structure using the seed film.

66. The method of claim 58, wherein plating at least one electrode material comprises:

chemical vapor depositing conductive material over at least a portion of the seed film; and

plating the at least one electrode material over the conductive material and the seed film.

67. The method of claim 58, wherein the capacitor comprises a substrate assembly that comprises a surface that defines an opening, wherein the opening is a small high aspect ratio opening having a critical dimension of less than about 1 micron and an aspect ratio greater than about 1.

68. The method of claim 58, wherein plating the electrode material comprises electroplating a conductive layer comprising platinum over at least a portion of the seed film.

69. A seed film for use in electroplating a conductive layer, comprising:

one or more noble metal layers, wherein each layer of the one or more noble metal layers is no greater than a monolayer; and

one or more conductive metal oxide layers, wherein each layer of the one or more conductive metal oxide layers is no greater than a monolayer.

70. The seed film of claim 69, wherein the seed film further comprises alternating layers of the one or more noble metal layers and the one or more conductive metal oxide layers.

71. The seed film of claim 69, wherein the one or more noble metal layers comprise at least one noble metal selected from a group consisting of iridium, ruthenium, platinum, and rhodium.

72. The seed film of claim 69, wherein the one or more conductive metal oxide layers comprise at least one noble metal oxide selected from a group consisting of iridium oxide, ruthenium oxide, and rhodium oxide.

73. The seed film of claim 69, wherein the one or more noble metal layers comprise platinum and the one or more conductive metal oxide layers comprise rhodium oxide.

74. The seed film of claim 69, wherein the seed film has a thickness of no less than 20 angstroms and no greater than 500 angstroms.

75. A seed film for use in electroplating a conductive layer, comprising:

one or more noble metal layers, wherein each layer of the one or more noble metal layers is no greater than a monolayer; and

one or more silicon oxide layers, wherein each layer of the one or more silicon oxide layers is no greater than a monolayer.

76. The seed film of claim 75, wherein the seed film further comprises alternating layers of the one or more noble metal layers and the one or more silicon oxide layers.

77. The seed film of claim 75, wherein the one or more noble metal layers are selected from a group consisting of iridium, ruthenium, platinum, and rhodium.

78. The seed film of claim 75, wherein the one or more silicon oxide layers comprises silicon dioxide.

79. The seed film of claim 75, wherein the first series of noble metal layers are platinum, and the second series of silicon oxide layers are silicon dioxide.

80. The seed film of claim 75, wherein the seed film has a thickness of no less than 20 angstroms and no greater than 500 angstroms.

81. A capacitor for an integrated circuit, comprising:

a substrate assembly;

a bottom electrode over at least a portion of the substrate assembly;

a dielectric layer on the bottom electrode; and

a top electrode on the dielectric layer, wherein at least one of the bottom electrode and the top electrode comprise an ALD deposited seed film comprising one or more noble metal layers and one or more conductive metal oxide layers, wherein each of the one or more noble metal layers and one or more conductive metal oxide layers is no greater than a monolayer, and further wherein the at least one of the bottom electrode and the top electrode comprises at least one conductive layer formed on the seed layer.

82. The capacitor of claim 81, wherein the conformal seed film is between a surface of the substrate assembly and the bottom electrode.

83. The capacitor of claim 82, further comprising a second conformal seed film, wherein the second conformal seed film is between the dielectric layer and the top electrode.

84. The capacitor of claim 81, wherein the one or more conductive metal oxide layers are selected from a group consisting of iridium oxide, ruthenium oxide, and rhodium oxide.

85. The capacitor of claim 81, wherein the one or more noble metal layers are selected from a group consisting of iridium, ruthenium, platinum, and rhodium.

86. The capacitor of claim 81, wherein the noble metal comprises platinum and the conductive metal oxide comprises rhodium oxide.

87. The capacitor of claim 81, wherein the at least one conductive layer comprises platinum.

88. The capacitor of claim 81, wherein the conformal seed film comprises a thickness of no less than 20 angstroms and no greater than 500 angstroms.

89. The capacitor of claim 81, wherein the portion of the substrate assembly comprises a surface that defines an opening, wherein the opening is a small high aspect ratio opening having a critical dimension of less than about 1 micron and an aspect ratio greater than about 1.

90. A capacitor for an integrated circuit, comprising:

a substrate assembly;

a bottom electrode over at least a portion of the substrate assembly;

a dielectric layer on the bottom electrode; and

a top electrode on the dielectric layer, wherein at least one of the bottom electrode and the top electrode comprise an ALD deposited seed film positioned between IC substrate assembly and the top electrode, wherein the conformal seed film comprises one or more noble metal layers and one or more oxide material layers, wherein each of the one or more noble metal layers and one or more oxide material layers is no greater than a monolayer, and further wherein the at least one of the bottom electrode and the top electrode comprises at least one conductive layer formed as the seed layer.

91. The capacitor of claim 90, wherein the conformal seed film is between a surface of the substrate assembly and the bottom electrode.

92. The capacitor of claim 91, further comprising a second conformal seed film, wherein the second conformal seed film is between the dielectric layer and the top electrode.

93. The capacitor of claim 90, wherein the one or more oxide material comprises a silicon oxide.

94. The capacitor of claim 90, wherein the one or more noble metal layers are selected from a group consisting of iridium, ruthenium, platinum, and rhodium.

95. The capacitor of claim 90, wherein the noble metal comprises platinum and the oxide material comprises silicon oxide.

96. The capacitor of claim 90, wherein the at least one conducive layer comprises platinum.

97. The capacitor of claim 90, wherein the conformal seed film comprises a thickness of no less than 20 angstroms and no greater than 500 angstroms.

98. The capacitor of claim 90, wherein the portion of the substrate assembly comprises a surface that defines an opening, wherein the opening is a small high aspect ratio opening having a critical dimension of less than about 1 micron and an aspect ratio greater than about 1.

99. A seed film for use in electroplating a conductive layer, comprising:

one or more platinum layers, wherein each layer of the one or more platinum layers is no greater than a monolayer; and

one or more rhodium oxide layers, wherein each layer of the one or more of rhodium oxide layers is no greater than a monolayer.

100. The seed film of claim 99, wherein the seed film further comprises alternating layers of the one or more platinum layers and the one or more rhodium oxide layers.

101. The seed film of claim 100, wherein the seed film has a thickness of no less than 20 angstroms and no greater than 500 angstroms.

102. A seed film for use in electroplating a conductive layer, comprising:

one or more platinum layers, wherein each layer of the one or more platinum layers is no greater than a monolayer; and

one or more silicon dioxide layers, wherein each layer of the one or more silicon dioxide layers is no greater than a monolayer.

103. The seed film of claim 102, wherein the seed film further comprises alternating layers of the one or more platinum layers and the one or more silicon dioxide layers.

104. The seed film of claim 103, wherein the seed film has a thickness of no less than 20 angstroms and no greater than 500 angstroms.