Method for fabricating light emitting diode with transparent substrate
First Claim
1. A method for fabricating a light-emitting diode with a transparent substrate, comprising:
- forming a first type cladding layer on a substrate;
forming an active layer on the first type cladding layer;
forming a second type cladding layer on the active layer;
forming a second type transparent semiconductor layer on the second type cladding layer to serve as the transparent substrate;
removing the substrate; and
forming a first type contact layer on the surface of the first type cladding layer previously connected to the substrate.
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Abstract
A method for fabricating a light emitting diode with transparent substrate. The method comprises forming a first type cladding layer on a substrate, forming an active layer on the first type cladding layer, forming a second type cladding layer on the active layer, forming a second type transparent semiconductor layer on the second type cladding layer to serve as the transparent substrate, removing the substrate, and forming a first type contact layer on the surface of the first type cladding layer previously connected to the substrate. The transparent substrate does not absorb the emitted light, thereby the light emitting efficiency is increased by as much as double, and thus the performance of opto-electronic devices is improved.
91 Citations
20 Claims
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1. A method for fabricating a light-emitting diode with a transparent substrate, comprising:
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forming a first type cladding layer on a substrate;
forming an active layer on the first type cladding layer;
forming a second type cladding layer on the active layer;
forming a second type transparent semiconductor layer on the second type cladding layer to serve as the transparent substrate;
removing the substrate; and
forming a first type contact layer on the surface of the first type cladding layer previously connected to the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for fabricating a light-emitting diode with a transparent substrate, comprising:
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forming a first type cladding layer on a GaAs substrate;
forming an active layer on the first type cladding layer;
forming a second type cladding layer on the active layer;
forming a second type GaP layer on the second type cladding layer to serve as the transparent substrate;
forming a second type contact layer on the second type GaP layer;
removing the GaAs substrate; and
forming a first type contact layer on the surface of the first type cladding layer previously connected to the GaAs substrate. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification
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- Resources
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Current AssigneeArima Optoelectronics Corp.
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Original AssigneeArima Optoelectronics Corp.
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InventorsTseng, Wen-Huang, Huang, Wen-Chieh, Lu, Chi-Wei
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Application NumberUS10/443,584Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current438/26CPC Class CodesH01L 33/0093 Wafer bonding; Removal of t...
