Method of forming silicon nitride deposited film

• US 20040043637A1
• Filed: 08/29/2003
• Published: 03/04/2004
• Est. Priority Date: 09/02/2002
• Status: Active Grant

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Kanai, Masahiro, Koike, Atsushi, Aota, Yukito, Sushihara, Tomokazu
• Granted Patent: US 6,881,684 B2
• Time in Patent Office: Days
• US Class Current: 438/791
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3185 of siliconnitrides

Abstract

A plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode are disposed in opposition to each other at an interval of less than 8 mm in a vacuum vessel; at least a silane-based gas and nitrogen gas as source gases are introduced into a reaction space of the vacuum vessel, and a silicon nitride deposited film is formed with the pressure of the reaction space being kept at 40 to 133. Thereby, a silicon nitride film with good quality can be obtained.

Claims

1. A method of forming a silicon nitride deposited film using the capacitive coupled plasma enhanced CVD process, which comprises disposing a plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode in opposition to each other at an interval of less than 8 mm in a vacuum vessel, introducing at least a silane-based gas and nitrogen gas as source gases into a reaction space of the vacuum vessel, and forming a silicon nitride deposited film with the pressure of the reaction space being kept at 40 to 133 Pa.

2. The method according to claim 1, wherein a density of a power supplied to the high-frequency electrode is 40 to 150 mW/cm².

3. The method according to claim 2, wherein the flow rate of the nitrogen gas is 10 to 30 times that of the silane-based gas.

4. The method according to claim 1, wherein the temperature of a substrate on which the silicon nitride film is deposited is 80°

C. or less.

5. The method according to claim 1, wherein the silicon nitride film is formed on another deposited film comprising an organic film.

6. A method of producing an organic electroluminescent device having an organic electroluminescent element provided on a substrate, comprising:

the element forming step of forming on a substrate an organic electroluminescent element comprising a pair of electrodes and an organic material interposed between the pair of electrodes; and

the silicon nitride film forming step, subsequently to the element forming step, of forming a silicon nitride film so as to cover the organic electroluminescent element,

wherein the silicon nitride film forming step comprises disposing a plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode in opposition to each other at an interval of less than 8 mm in a vacuum vessel, introducing at least a silane-based gas and nitrogen gas as source gases into a reaction space of the vacuum vessel, and forming a silicon nitride film with the pressure of the reaction space being kept at 40 to 133 Pa.

7. The method according to claim 6, wherein of the pair of electrodes of the electroluminescent element, the electrode on the substrate side is a reflecting electrode and the other electrode is a transparent electrode.

8. The method according to claim 7, wherein the silicon nitride film covers not only the transparent electrode but also a side portion of the organic electroluminescent element.