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Method of forming silicon nitride deposited film

  • US 20040043637A1
  • Filed: 08/29/2003
  • Published: 03/04/2004
  • Est. Priority Date: 09/02/2002
  • Status: Active Grant
First Claim
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1. A method of forming a silicon nitride deposited film using the capacitive coupled plasma enhanced CVD process, which comprises disposing a plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode in opposition to each other at an interval of less than 8 mm in a vacuum vessel, introducing at least a silane-based gas and nitrogen gas as source gases into a reaction space of the vacuum vessel, and forming a silicon nitride deposited film with the pressure of the reaction space being kept at 40 to 133 Pa.

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