Plasma etching apparatus

• US 20040045675A1
• Filed: 08/26/2003
• Published: 03/11/2004
• Est. Priority Date: 03/16/1995
• Status: Abandoned Application

• Current Assignee: Kazue Takahashi, Mitsuru Suehiro, Saburo Kanai, Tetsunori Kaji, Toshio Masuda
• Original Assignee: Kazue Takahashi, Mitsuru Suehiro, Saburo Kanai, Tetsunori Kaji, Toshio Masuda
• Inventors: Takahashi, Kazue, Masuda, Toshio, Suehiro, Mitsuru, Kanai, Saburo, Kaji, Tetsunori
• Application Number:
  US10/647,319
• Publication Number:
  US 20040045675A1
• Time in Patent Office: Days
• US Class Current: 156/345.48
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/32504 Means for preventing sputtering of the vessel
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

A plasma etching apparatus for processing a sample disposed inside of a processing chamber by generating a plasma in the processing chamber. An antenna is disposed above the sample for radiating electromagnetic waves toward the inside of the processing chamber. A dielectric member is disposed with respect to an outer periphery of the antenna, and a member is disposed above the sample in the processing chamber and facing the sample at the outer periphery of the antenna. The sample is processed in the processing chamber while enabling control of a temperature on a surface of the member.

Claims

1. A plasma etching apparatus for etching of a sample comprising:

an etching chamber, the sample being disposed in said etching chamber; and

a plasma generator which generates a plasma for performing etching of said sample in said etching chamber;

wherein said plasma generator includes an antenna disposed above the sample for radiating electromagnetic waves toward an interior of said etching chamber, a dielectric member disposed with respect to an outer periphery of said antenna, and a member disposed above the sample in the processing chamber and fading the sample at the outer periphery of said antenna, the sample being processed while enabling control of a temperature on a surface of said member.

2. A plasma etching apparatus for processing a sample disposed inside of a processing chamber by generating a plasma in the processing chamber comprising an antenna disposed above the sample for radiating electromagnetic waves toward the inside of the processing chamber, a dielectric member disposed with respect to an outer periphery of the antenna, and a member disposed above the sample in the processing chamber and facing the sample at the outer periphery of the antenna, wherein the sample is processed while enabling control of a temperature on a surface of the member.

4. A plasma etching apparatus according to claim 2, wherein the electromagnetic waves are supplied by way of the dielectric member to the inside of the processing chamber.

5. A plasma etching apparatus according to claim 2, wherein the surface of the member is heated.

6. A plasma etching apparatus according to claim 5, further comprising a heating device for heating the surface of the member.

7. A plasma etching apparatus according to claim 6, wherein the heating device is disposed outside of the processing chamber.

8. A plasma etching apparatus according to claim 2, wherein a portion of an electric power supplied to the antenna is supplied to the member.

9. A plasma etching apparatus according to claim 2, wherein the dielectric member and the member are ring-shaped.

3. A plasma etching apparatus for processing a sample disposed inside of a processing chamber by generating a plasma in the processing chamber comprising an antenna disposed above the sample for radiating electromagnetic waves toward the inside of the processing chamber, a dielectric member disposed with respect to an outer periphery of the antenna, and a member disposed below the dielectric member and facing an interior of the processing chamber, wherein the sample is processed while enabling control of a temperature on a surface of the member.

10. A plasma etching apparatus according to claim 3, wherein the electromagnetic waves are supplied by way of the dielectric member to the inside of the processing chamber.

11. A plasma etching apparatus according to claim 3, wherein the surface of the member is heated.

12. A plasma etching apparatus according to claim 11, further comprising a heating device for heating the surface of the member.

13. A plasma etching apparatus according to claim 12, wherein the heating device is disposed outside of the processing chamber.

14. A plasma etching apparatus according to claim 3, wherein a portion of an electric power supplied to the antenna is supplied to the member.

15. A plasma etching apparatus according to claim 3, wherein the dielectric member and the member are ring-shaped.