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Gate structures in nonvolatile memory devices having curved side walls formed using oxygen pathways and methods of forming same

  • US 20040046206A1
  • Filed: 07/29/2003
  • Published: 03/11/2004
  • Est. Priority Date: 09/10/2002
  • Status: Active Grant
First Claim
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1. A gate structure of a non-volatile integrated circuit memory device comprising:

  • a thermal oxidation layer on a substrate beneath the gate structure and that defines a side wall of the gate structure;

    an oxygen diffusion barrier layer on the side wall of the gate structure; and

    a floating gate on the thermal oxidation layer having a curved side wall portion.

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