Electrooptic device and electronic equipment

• US 20040046902A1
• Filed: 09/02/2003
• Published: 03/11/2004
• Est. Priority Date: 09/11/2002
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Yamasaki, Yasuji
• Granted Patent: US 7,019,807 B2
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 2202/42 Materials having a particular dielectric constant

Abstract

The present invention provides an electro-optic device that displays high-quality images without irregular display along data lines arising from variations in the potential of pixel electrodes by energization to the data lines in an electro-optic device. The electro-optic device can have a multilayer structure including a substrate, TFTs, scanning lines, storage capacitance, data lines, and pixel electrodes, each of which is arranged on the substrate in this order. In this electro-optic device, a third interlayer insulator positioned between the data lines and the pixel electrodes has a relative dielectric constant lower than that of a dielectric film constituting the storage capacitance. The third interlayer insulator preferably has a relative dielectric constant lower than those of first and second interlayer insulators.

Claims

1. An electro-optic device, comprising:

a substrate;

data lines disposed on the substrate and extending in a set direction;

scanning lines disposed on the substrate and extending in a direction perpendicular to the data lines; and

pixel electrodes and thin film transistors disposed on the substrate and each being arranged so as to correspond to the regions of intersection between the data lines and the scanning lines;

a storage capacitance having pixel-potential capacitive electrodes coupled to the pixel electrodes and thin film transistors;

fixed-potential capacitive electrodes facing the pixel-potential capacitive electrodes;

a dielectric film arranged between the pixel-potential capacitive electrodes and the fixed-potential capacitive electrodes;

a first interlayer insulator arranged between the fixed-potential capacitive electrodes and the scanning lines;

a second interlayer insulator arranged between the data lines and the fixed-potential capacitive electrodes; and

a third interlayer insulator arranged between the pixel electrodes and the data lines,

at least one of the first interlayer insulator, the second interlayer insulator, and the third interlayer insulator having a relative dielectric constant lower than that of the dielectric film constituting the storage capacitance.

2. The electro-optic device according to claim 1, the third interlayer insulator having a relative dielectric constant lower than those of the first interlayer insulator and the second interlayer insulator.

3. The electro-optic device according to claim 1, at least one of the first interlayer insulator, the second interlayer insulator, and the third interlayer insulator having a relative dielectric constant less than 3.9.

4. The electro-optic device according to claim 1, at least one of the first interlayer insulator, the second interlayer insulator, and the third interlayer insulator having a thickness of 800 nm or more.

5. The electro-optic device according to claim 1, at least one of the first interlayer insulator, the second interlayer insulator, and the third interlayer insulator including an inorganic material.

6. The electro-optic device according to claim 5, the inorganic material comprising at least one of SiOF and amorphous carbon.

7. The electro-optic device according to claim 1, a semiconductor layer constituting the thin film transistors comprising a low temperature polycrystalline silicon, and

at least one of the first interlayer insulator, the second interlayer insulator, and the third interlayer insulator comprising an organic material.

8. The electro-optic device according to claim 1, the pixel electrodes being at least partially nonoverlapping with the data lines when viewed from above.

9. The electro-optic device according to claim 1, further comprising a shield layer having a fixed potential and being arranged between the pixel electrodes and the data lines, and

the third interlayer insulator comprising:

a fourth interlayer insulator arranged between the pixel electrodes and the shield layer; and

a fifth interlayer insulator arranged between the shield layer and the data lines, and wherein at least one of the fourth interlayer insulator and the fifth interlayer insulator has a relative dielectric constant lower than that of the dielectric film.

10. The electro-optic device according to claim 9, the fifth interlayer insulator having a relative dielectric constant lower than that of the fourth interlayer insulator.

11. The electro-optic device according to claim 1, the electro-optic device comprising the substrate;

a semiconductor layer constituting the thin film transistors;

the scanning lines arranged on the semiconductor layer and including gate electrodes of the thin film transistors;

the pixel-potential capacitive electrodes;

the dielectric film;

the fixed-potential capacitive electrodes;

the data lines; and

the pixel electrodes, each of which are arranged on the substrate in this order.

12. The electro-optic device according to claim 1, the fixed-potential capacitive electrodes constituting a part of capacitive lines arranged along the scanning lines.

13. Electronic equipment comprising the electro-optic device according to claim 1.