Lithium vanadium oxide thin-film battery

• US 20040048157A1
• Filed: 09/11/2002
• Published: 03/11/2004
• Est. Priority Date: 09/11/2002
• Status: Abandoned Application

• Current Assignee: ITN Energy Systems, Inc.
• Original Assignee: ITN Energy Systems, Inc.
• Inventors: Armstrong, Joseph H., Neudecker, Bernd J., Lanning, Bruce, Benson, Martin H.
• Application Number:
  US10/238,905
• Publication Number:
  US 20040048157A1
• Time in Patent Office: Days
• US Class Current: 429/231.2
• CPC Class Codes: H01M 10/0436 Small-sized flat cells or batteries for portable equipment
• CPC Class Codes: H01M 10/052 Li-accumulators
• CPC Class Codes: H01M 10/0525 Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• CPC Class Codes: H01M 10/0562 Solid materials
• CPC Class Codes: H01M 4/0421 involving vapour deposition
• CPC Class Codes: H01M 4/0426 Sputtering
• CPC Class Codes: H01M 4/5825 Oxygenated metallic salts or polyanionic structures, e.g. borates, phosphates, silicates, olivines
• CPC Class Codes: H01M 4/661 Metal or alloys, e.g. alloy coatings H01M4/669 take precedence
• CPC Class Codes: Y02E 60/10 Energy storage using batteries
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 29/49115 including coating or impregnating

Abstract

The manufacture and use of multilayer thin-film batteries, such as inverted lithium-free batteries is explained. The present invention provides a battery that may include a lithium vanadium oxide Li_xV₂O_y (0<x≦100, 0<y≦5) positive cathode or negative anode. The present invention may also provide for a thin-film battery that may be formed on a wide variety of substrate materials and geometries.

Claims

1. A method of fabricating an as-deposited lithiated vanadium oxide film comprising the steps of:

providing a source comprising an approximate overall composition of Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5, and

vacuum depositing said source,

wherein said source comprises at least two of the group consisting of Li₃VO₄, LiVO₃, and V₂O₃.

2. The method of claim 1, wherein said step of vacuum depositing comprises a technique selected from a group consisting of reactive magnetron sputtering, non-reactive magnetron sputtering, reactive diode sputtering, non-reactive diode sputtering, reactive electron beam evaporation, non-reactive electron beam evaporation, reactive electron beam directed vapor deposition, non-reactive electron beam directed vapor deposition, reactive plasma enhanced electron beam directed vapor deposition, non-reactive plasma enhanced electron beam directed vapor deposition, reactive thermal evaporation, non-reactive thermal evaporation, plasma assisted thermal evaporation, cathodic arc deposition, ion beam deposition, plasma assisted ion beam deposition, pulsed laser deposition, chemical vapor deposition, and plasma enhanced chemical vapor deposition.

3. The method of claim 1, wherein said source comprises a target, and said step of vacuum depositing comprises sputter depositing.

4. The method of claim 3, wherein said target comprises a plurality of separate targets.

5. The method of claim 3, wherein said target comprises a plurality of segments.

6. The method of claim 3, further comprising the step of adjusting an oxygen to lithium and vanadium ratio in a product of said step of sputter depositing said target by annealing said product in an appropriate gas atmosphere with a temperature greater than about −

195.8°

C.

7. The method of claim 3, further comprising the step of adjusting an oxygen to lithium and vanadium ratio in a product of said step of sputter depositing said target by sputter depositing said target in an atmosphere containing an appropriate O₂ partial pressure.

8. The method of claim 6, wherein said temperature is greater than about 20°

C.

9. The method of claim 8, wherein said temperature is greater than about 10°

C.

10. The method of claim 3, wherein said step of sputter depositing comprises depositing a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

11. The method of claim 3, wherein said step of sputter depositing comprises depositing a film having a thickness of between about 0.005 microns and about 20 microns.

12. The method of claim 3, wherein said step of sputter depositing comprises depositing a film having a thickness of between about 0.005 microns and about 5 microns.

13. The method of claim 3, further comprising providing supplemental target material to said target.

14. The method of claim 13, wherein said supplemental target material comprises a material selected from a group consisting of Li₃N, Li₂O, Li₂O₂, and Li.

15. The method of claim 14, wherein said supplemental target material further comprises a doping material and wherein said doping material comprises a material selected from a group consisting of H, Be, Na, Mg, K, Ca, Rb, Sr, Cs, Ba, Al, Si, P, Ga, Ge, As, In, Sn, Sb, Tl, Pb, Bi, Sc, Ti, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, La, Hf, Ta, W, and Ce.

16. The method of claim 13, wherein said step of providing supplemental target material comprises placing pellets on said target.

17. The method of claim 13, wherein said step of providing supplemental target material comprises providing said supplemental target material in precut grooves in said target.

18. The method of claim 13, wherein said step of providing supplemental target material comprises providing said supplemental target material in a segment of said target.

19. The method of claim 13, wherein said supplemental target material comprises a material selected from a group consisting of vanadium metal and V₂O₃.

20. An apparatus for use as a solid-state thin-film battery comprising

a substrate,

a cathode layer on said substrate, and

an electrolyte layer on said cathode layer, wherein said cathode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

21. The apparatus of claim 20, further comprising an anode layer on said electrolyte layer.

22. The apparatus of claim 21, wherein said anode layer comprises a material selected from a group consisting of Mg, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, P, As, Sb, Bi, Pd, Zn, Cd, Ag, Ir, Pt, Au, Li₄Ti₅O₁₂, lithium cobalt nitride, lithium manganese nitride, SnN_x (0<

x≦

1.33), InN_x (0<

x≦

1.0), ZnN_x (0<

x≦

0.67), CuN_x (0<

x≦

0.33), NiN_x (0<

x≦

0.33), silicon tin oxynitride, SnO_x (0<

x≦

2.0), InO_x (0<

x≦

1.5), and PbO_x (0<

x≦

2.0).

23. The apparatus of claim 21, wherein said anode layer comprises a metallic lithium anode layer.

24. The apparatus of claim 20, wherein said substrate comprises a form selected from a group consisting of foil, sheet, plate, ribbon, and round.

25. The apparatus of claim 20, wherein said substrate comprises a material selected from a group consisting of a metal, an alloy, polyester, polyimide, polyamide, polycarbonate, polyurethane, polyalcohol, rubber, silicone, a ceramic, a semi-conductor, silicon, graphite, and glass.

26. The apparatus of claim 20, further comprising a barrier layer between said substrate and said cathode layer.

27. The apparatus of claim 26, wherein said barrier layer comprises a material selected from a group consisting of Lipon, graphitic carbon, diamond-like carbon, aluminum nitride, aluminum oxynitride, aluminum oxide, silicon nitride, silicon oxynitride, silicon monoxide, silicon dioxide, silicon carbide, titanium nitride, titanium oxynitride, titanium boride, titanium silicide, titanium carbide, vanadium nitride, vanadium carbide, vanadium silicide, vanadium boride, chromium nitride, chromium carbide, chromium boride, chromium silicide, yttrium nitride, yttrium carbide, yttrium boride, yttrium silicide, zirconium nitride, zirconium carbide, zirconium boride, zirconium silicide, niobium nitride, niobium carbide, niobium boride, niobium suicide, molybdenum nitride, molybdenum carbide, molybdenum boride, molybdenum silicide, hafnium nitride, hafnium carbide, hafnium boride, hafnium silicide, tantalum nitride, tantalum carbide, tantalum boride, tantalum silicide, tungsten nitride, tungsten carbide, tungsten boride, and tungsten silicide.

28. The apparatus of claim 20, further comprising a cathode current collector layer beneath said cathode layer.

29. The apparatus of claim 28, wherein said cathode current collector layer comprises a material selected from a group consisting of Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Ir, Pt, Au, CuSn, phosphor bronze, and stainless steel.

30. The apparatus of claim 21, further comprising an anode current collector layer on said anode layer.

31. The apparatus of claim 20, further comprising an anode current collector layer on said electrolyte layer.

32. The apparatus of claim 30, wherein said anode current collector layer comprises a material selected from a group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Nb, Mo, Hf, Ta, W, CuSn, phosphor bronze, and stainless steel.

33. The apparatus of claim 21, wherein said anode layer comprises a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

34. The apparatus of claim 20, wherein said electrolyte layer comprises a thickness of about 0.1 microns to about 100 microns.

35. The apparatus of claim 20, wherein said electrolyte layer comprises a solid-state material selected from a group consisting of LiAlF₄, LiAlCl₄, and polymer lithium electrolyte.

36. The apparatus of claim 20, wherein said electrolyte layer comprises a non-aqueous liquid lithium electrolyte.

37. The apparatus of claim 36, wherein said electrolyte layer further comprises a solid-state separator.

38. The apparatus of claim 20, wherein said cathode layer comprises a film having a thickness of between about 0.005 microns and about 20 microns.

39. The apparatus of claim 20, wherein said cathode layer comprises a film having a thickness of between about 0.005 microns and about 5 microns.

40. An apparatus for use as a solid-state thin-film battery comprising

a substrate,

an electrolyte layer on said substrate, and

a cathode layer on said electrolyte layer, wherein said cathode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

41. The apparatus of claim 40, further comprising a barrier layer between said substrate and said electrolyte layer.

42. The apparatus of claim 40, further comprising a cathode current collector layer on said cathode layer.

43. The apparatus of claim 40, further comprising an anode current collector layer between said substrate and said electrolyte layer.

44. The apparatus of claim 40, wherein said cathode layer comprises a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

45. The apparatus of claim 40, wherein said cathode layer comprises a film having a thickness of between about 0.005 microns and about 20 microns.

46. The apparatus of claim 40, wherein said cathode layer comprises a film having a thickness of between about 0.005 microns and about 5 microns.

47. The apparatus of claim 40, further comprising an anode layer between said substrate and said electrolyte layer.

48. The apparatus of claim 47, wherein said anode layer comprises an anode layer selected from a group consisting of a lithium-free anode layer, a lithium-ion anode layer, and a metallic lithium anode layer.

49. An apparatus for use as a solid-state thin-film battery comprising

a substrate,

a cathode layer on said substrate,

an electrolyte layer on said cathode layer, and

an anode layer on said electrolyte layer, wherein said anode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

50. The apparatus of claim 49, wherein said cathode layer comprises a material selected from a group consisting of LiCoO₂, LiNiO₂, LiMn₂O₄, Li_xMn₂₋

yO₄ (1.2<

x<

2.2, y≈

0.3), LiFePO₄, LiVOPO₄, LiTiS₂, LiMnCrO₄, LiCo<sub>1−

x</sub>Al_xO₂ (0≦

x≦

1), V₂O₅, V₆O₁₃, VO₂, MnO₂, FePO₄, VOPO₄, TiS₂, and MnO_{0 5}Cr_0.5O₂.

51. The apparatus of claim 49, further comprising a barrier layer between said substrate and said cathode layer.

52. The apparatus of claim 49, further comprising a cathode current collector layer beneath said cathode layer.

53. The apparatus of claim 49, further comprising an anode current collector layer on said anode layer.

54. The apparatus of claim 49, wherein said anode layer comprises a film having a thickness of between about 0.005 microns and about 20 microns.

55. The apparatus of claim 49, wherein said anode layer comprises a film having a thickness of between about 0.005 microns and about 5 microns.

56. An apparatus for use as a solid-state thin-film battery comprising

a substrate,

an anode layer on said substrate,

an electrolyte layer on said anode layer, and

a cathode layer on said electrolyte layer, wherein said anode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

57. The apparatus of claim 56, further comprising a barrier layer between said substrate and said anode layer.

58. The apparatus of claim 56, further comprising a cathode current collector layer on said cathode layer.

59. The apparatus of claim 56, further comprising an anode current collector layer beneath said anode layer.

60. The apparatus of claim 56, wherein said anode layer comprises a film having a thickness of between about 0.005 microns and about 20 microns.

61. The apparatus of claim 56, wherein said anode layer comprises a film having a thickness of between about 0.005 microns and about 5 microns.

62. An apparatus for use as a solid-state thin-film battery comprising

a substrate,

a first electrode layer on said substrate,

an electrolyte layer on said first electrode layer, and

a second electrode layer on said electrolyte layer, wherein said second electrode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5 and wherein said first electrode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

63. The apparatus of claim 62, further comprising a barrier layer between said substrate and said first electrode layer.

64. The apparatus of claim 62, further comprising a current collector layer beneath the first electrode layer.

65. The apparatus of claim 62, further comprising a current collector layer on said second electrode layer.

66. The apparatus of claim 62, wherein said first electrode layer comprises a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

67. The apparatus of claim 62, wherein said second electrode layer comprises a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

68. The apparatus of claim 62, wherein said first electrode layer comprises a film having a thickness of between about 0.005 microns and about 20 microns.

69. The apparatus of claim 62, wherein said first electrode layer comprises a film having a thickness of between about 0.005 microns and about 5 microns.

70. The apparatus of claim 62, wherein said second electrode layer comprises a film having a thickness of between about 0.005 microns and about 20 microns.

71. The apparatus of claim 62, wherein said second electrode layer comprises a film having a thickness of between about 0.005 microns and about 5 microns.

72. The apparatus of claim 62, wherein said first electrode layer comprise an electrode selected from a group consisting of a positive cathode and a negative anode.

73. The apparatus of claim 62, wherein said second electrode layer comprise an electrode selected from a group consisting of a positive cathode and a negative anode.

74. An apparatus for use as a solid-state thin-film battery system comprising

a substrate having a first side and a second side,

a first electrode layer on said first side of said substrate,

a first electrolyte layer on said first electrode layer,

a second electrode layer on said first electrolyte layer,

a third electrode layer on said second side of said substrate,

a second electrolyte layer on said third electrode layer, and

a fourth electrode layer on said second electrolyte layer, wherein at least one of said fourth electrode layer, said third electrode layer, said second electrode layer, and said first electrode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

75. The apparatus of claim 74, wherein said first electrode layer, said first electrolyte layer, and said second electrode layer comprises a first battery, and wherein said third electrode layer, said second electrolyte layer, and said fourth electrode layer comprises a second battery.

76. The apparatus of claim 75, wherein said first battery is adapted to electrically cycle in parallel with said second battery.

77. The apparatus of claim 75, wherein said first battery is adapted to electrically cycle in series with said second battery.

78. An apparatus for use as an electrochromic cell comprising

a substrate,

a layer of Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5, on said substrate,

a layer of electrolyte on said layer of Li_xV₂O_y, and

a layer of electrochromic electrode on said layer of electrolyte.

79. A method of manufacturing an electrochromic cell comprising

providing a substrate,

vacuum depositing a layer of Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5, on said substrate,

depositing a layer of electrolyte on said layer of Li_xV₂O_y, and

depositing a layer of electrochromic electrode on said layer of electrolyte.

80. A method of manufacturing a solid-state thin-film battery comprising the steps of

providing a substrate,

depositing a cathode layer on said substrate,

depositing an electrolyte layer on said cathode layer, and

depositing an anode layer on said electrolyte layer, wherein said cathode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

81. The method of claim 80, further comprising the step of adjusting an oxygen to lithium and vanadium ratio in said cathode layer by annealing said cathode layer in an appropriate gas atmosphere with a temperature greater than about −

195.8°

C.

82. The method of claim 81, wherein said temperature is greater than about 20°

C.

83. The method of claim 82, wherein said temperature is greater than about 100°

C.

84. The method of claim 80, wherein said step of depositing a cathode layer comprises a technique selected from the group consisting of reactive magnetron sputtering, non-reactive magnetron sputtering, reactive diode sputtering, non-reactive diode sputtering, reactive electron beam evaporation, non-reactive electron beam evaporation, reactive electron beam directed vapor deposition, non-reactive electron beam directed vapor deposition, reactive plasma enhanced electron beam directed vapor deposition, non-reactive plasma enhanced electron beam directed vapor deposition, reactive thermal evaporation, non-reactive thermal evaporation, plasma assisted thermal evaporation, cathodic arc deposition, ion beam deposition, plasma assisted ion beam deposition, pulsed laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, photo-chemical chemical vapor deposition, and molecular beam epitaxy.

85. The method of claim 80, wherein said cathode layer comprises a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

86. The method of claim 80, wherein said electrolyte layer comprises a thickness of about 0.1 microns to about 100 microns.

87. The method of claim 80, wherein said electrolyte layer comprises a solid-state material selected from a group consisting of LiAlF₄, LiAlCl₄, and polymer lithium electrolyte.

88. The method of claim 80, wherein said electrolyte layer comprises a non-aqueous liquid lithium electrolyte.

89. The method of claim 88, wherein said electrolyte layer further comprises a solid-state separator.

90. The method of claim 80, wherein said step of depositing a cathode layer comprises depositing a film having a thickness of between about 0.005 microns and about 20 microns.

91. The method of claim 80, wherein said step of depositing a cathode layer comprises depositing a film having a thickness of between about 0.005 microns and about 5 microns.

92. A method of manufacturing a solid-state thin-film battery comprising the steps of

providing a substrate,

depositing an electrolyte layer on said substrate, and

depositing a cathode layer on said electrolyte layer, wherein said cathode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

93. The method of claim 92, further comprising the step of adjusting an oxygen to lithium and vanadium ratio in said cathode layer by annealing said cathode layer in an appropriate gas atmosphere with a temperature greater than about −

195.8°

C.

94. The method of claim 93, wherein said temperature is greater than about 20°

C.

95. The method of claim 94, wherein said temperature is greater than about 100°

C.

96. The method of claim 92, wherein said step of depositing a cathode layer comprises a technique selected from the group consisting of reactive magnetron sputtering, non-reactive magnetron sputtering, reactive diode sputtering, non-reactive diode sputtering, reactive electron beam evaporation, non-reactive electron beam evaporation, reactive electron beam directed vapor deposition, non-reactive electron beam directed vapor deposition, reactive plasma enhanced electron beam directed vapor deposition, non-reactive plasma enhanced electron beam directed vapor deposition, reactive thermal evaporation, non-reactive thermal evaporation, plasma assisted thermal evaporation, cathodic arc deposition, ion beam deposition, plasma assisted ion beam deposition, pulsed laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, photo-chemical chemical vapor deposition, and molecular beam epitaxy.

97. The method of claim 92, wherein said cathode layer comprises a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

98. The method of claim 92, wherein said electrolyte layer comprises a thickness of about 0.1 microns to about 100 microns.

99. The method of claim 92, wherein said electrolyte layer comprises a solid-state material selected from a group consisting of LiAlF₄, LiAlCl₄, and polymer lithium electrolyte.

100. The method of claim 92, wherein said electrolyte layer comprises a non-aqueous liquid lithium electrolyte.

101. The method of claim 100, wherein said electrolyte layer further comprises a solid-state separator.

102. The method of claim 92, wherein said step of depositing an cathode layer comprises depositing a film having a thickness of between about 0.005 microns and about 20 microns.

103. The method of claim 92, wherein said step of depositing an cathode layer comprises depositing a film having a thickness of between about 0.005 microns and about 5 microns.

104. The method of claim 92, further comprising the step of depositing an anode layer on said substrate between said steps of providing a substrate and depositing an electrolyte layer.

105. A method of manufacturing a solid-state thin-film battery comprising the steps of

providing a substrate,

depositing a cathode layer on said substrate,

depositing an electrolyte layer on said cathode layer, and

depositing an anode layer on said electrolyte layer, wherein said anode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

106. The method of claim 105, wherein said cathode layer comprises a material selected from a group consisting of LiCoO₂, LiNiO₂, LiMn₂O₄, Li_xMn₂₋

yO₄ (1.2<

x<

2.2, y≈

0.3), LiFePO₄, LiVOPO₄, LiTiS₂, LiMnCrO₄, LiCo<sub>1−

x</sub>Al_xO₂ (0≦

x≦

1), V₂O₅, V₆O₁₃, VO₂, MnO₂, FePO₄, VOPO₄, TiS₂, or Mn_0.5Cr_0.5O₂.

107. The method of claim 105, further comprising the step of adjusting an oxygen to lithium and vanadium ratio in said anode layer by annealing said anode layer in an appropriate gas atmosphere with a temperature greater than about −

195.8°

C.

108. The method of claim 107, wherein said temperature is greater than about 20°

C.

109. The method of claim 108, wherein said temperature is greater than about 100°

C.

110. The method of claim 105, wherein said step of depositing an anode layer comprises a technique selected from the group consisting of reactive magnetron sputtering, non-reactive magnetron sputtering, reactive diode sputtering, non-reactive diode sputtering, reactive electron beam evaporation, non-reactive electron beam evaporation, reactive electron beam directed vapor deposition, non-reactive electron beam directed vapor deposition, reactive plasma enhanced electron beam directed vapor deposition, non-reactive plasma enhanced electron beam directed vapor deposition, reactive thermal evaporation, non-reactive thermal evaporation, plasma assisted thermal evaporation, cathodic arc deposition, ion beam deposition, plasma assisted ion beam deposition, pulsed laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, photo-chemical chemical vapor deposition, and molecular beam epitaxy.

111. The method of claim 105, wherein said anode layer comprises a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

112. The method of claim 105, wherein said electrolyte layer comprises a thickness of about 0.1 microns to about 100 microns.

113. The method of claim 105, wherein said electrolyte layer comprises a solid-state material selected from a group consisting of LiAlF₄, LiAlCl₄, and polymer lithium electrolyte.

114. The method of claim 105, wherein said electrolyte layer comprises a non-aqueous liquid lithium electrolyte.

115. The method of claim 114, wherein said electrolyte layer further comprises a solid-state separator.

116. The method of claim 105, wherein said step of depositing an anode layer comprises depositing a film having a thickness of between about 0.005 microns and about 20 microns.

117. The method of claim 105, wherein said step of depositing an anode layer comprises depositing a film having a thickness of between about 0.005 microns and about 5 microns.

118. A method of manufacturing a solid-state thin-film battery comprising the steps of

providing a substrate,

depositing an anode layer on said substrate,

depositing an electrolyte layer on said anode layer, and

depositing a cathode layer on said electrolyte layer, wherein said anode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

119. The method of claim 118, wherein said cathode layer comprises a material selected from a group consisting of LiCoO₂, LiNiO₂, LiMn₂O₄, Li_xMn₂₋

yO₄ (1.2<

x<

2.2, y≈

0.3), LiFePO₄, LiVOPO₄, LiTiS₂, LiMnCrO₄, LiCoO<sub>1−

x</sub>Al_xO₂ (0≦

x≦

1), V₂O₅, V₆O₁₃, VO₂, MnO₂, FePO₄, VOPO₄, TiS₂, or Mn_0.5Cr_0.5O₂.

120. The method of claim 118, further comprising the step of adjusting an oxygen to lithium and vanadium ratio in said anode layer by annealing said anode layer in an appropriate gas atmosphere with a temperature greater than about −

195.8°

C.

121. The method of claim 120, wherein said temperature is greater than about 20°

C.

122. The method of claim 121, wherein said temperature is greater than about 100°

C.

123. The method of claim 118, wherein said step of depositing an anode layer comprises a technique selected from the group consisting of reactive magnetron sputtering, non-reactive magnetron sputtering, reactive diode sputtering, non-reactive diode sputtering, reactive electron beam evaporation, non-reactive electron beam evaporation, reactive electron beam directed vapor deposition, non-reactive electron beam directed vapor deposition, reactive plasma enhanced electron beam directed vapor deposition, non-reactive plasma enhanced electron beam directed vapor deposition, reactive thermal evaporation, non-reactive thermal evaporation, plasma assisted thermal evaporation, cathodic arc deposition, ion beam deposition, plasma assisted ion beam deposition, pulsed laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, photo-chemical chemical vapor deposition, and molecular beam epitaxy.

124. The method of claim 118, wherein said anode layer comprises a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

125. The method of claim 118, wherein said electrolyte layer comprises a thickness of about 0.1 microns to about 100 microns.

126. The method of claim 118, wherein said electrolyte layer comprises a solid-state material selected from a group consisting of LiAlF₄, LiAlCl₄, and polymer lithium electrolyte.

127. The method of claim 118, wherein said electrolyte layer comprises a non-aqueous liquid lithium electrolyte.

128. The method of claim 127, wherein said electrolyte layer further comprises a solid-state separator.

129. The method of claim 118, wherein said step of depositing an anode layer comprises depositing a film having a thickness of between about 0.005 microns and about 20 microns.

130. The method of claim 118, wherein said step of depositing an anode layer comprises depositing a film having a thickness of between about 0.005 microns and about 5 microns.

131. A method of manufacturing a solid-state thin-film battery comprising the steps of

providing a substrate,

depositing a first electrode layer on said substrate,

depositing an electrolyte layer on said first electrode layer, and

depositing a second electrode layer on said electrolyte layer, wherein said second electrode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5, and wherein said first electrode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.

132. The method of claim 131, further comprising the step of adjusting an oxygen to lithium and vanadium ratio in said first electrode layer by annealing said first electrode layer in an appropriate gas atmosphere with a temperature greater than about −

195.8°

C.

133. The method of claim 132, wherein said temperature is greater than about 20°

C.

134. The method of claim 133, wherein said temperature is greater than about 100°

C.

135. The method of claim 131, further comprising the step of adjusting an oxygen to lithium and vanadium ratio in said second electrode layer by annealing said second electrode layer in an appropriate gas atmosphere with a temperature greater than about −

195.8°

C.

136. The method of claim 135, wherein said temperature is greater than about 20°

C.

137. The method of claim 136, wherein said temperature is greater than about 100°

C.

138. The method of claim 131, wherein said step of depositing a first electrode layer comprises a technique selected from the group consisting of reactive magnetron sputtering, non-reactive magnetron sputtering, reactive diode sputtering, non-reactive diode sputtering, reactive electron beam evaporation, non-reactive electron beam evaporation, reactive electron beam directed vapor deposition, non-reactive electron beam directed vapor deposition, reactive plasma enhanced electron beam directed vapor deposition, non-reactive plasma enhanced electron beam directed vapor deposition, reactive thermal evaporation, non-reactive thermal evaporation, plasma assisted thermal evaporation, cathodic arc deposition, ion beam deposition, plasma assisted ion beam deposition, pulsed laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, photo-chemical chemical vapor deposition, and molecular beam epitaxy.

139. The method of claim 131, wherein said step of depositing a second electrode layer comprises a technique selected from the group consisting of reactive magnetron sputtering, non-reactive magnetron sputtering, reactive diode sputtering, non-reactive diode sputtering, reactive electron beam evaporation, non-reactive electron beam evaporation, reactive electron beam directed vapor deposition, non-reactive electron beam directed vapor deposition, reactive plasma enhanced electron beam directed vapor deposition, non-reactive plasma enhanced electron beam directed vapor deposition, reactive thermal evaporation, non-reactive thermal evaporation, plasma assisted thermal evaporation, cathodic arc deposition, ion beam deposition, plasma assisted ion beam deposition, pulsed laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, photo-chemical chemical vapor deposition, and molecular beam epitaxy.

140. The method of claim 131, wherein said first electrode layer comprises a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

141. The method of claim 131, wherein said second electrode layer comprises a film comprising one or more phases of a type selected from a group consisting of glassy, amorphous, nano-crystalline, and crystalline.

142. The apparatus of claim 131, wherein said electrolyte layer comprises a thickness of about 0.1 microns to about 100 microns.

143. The method of claim 131, wherein said electrolyte layer comprises a solid-state material selected from a group consisting of LiAlF₄, LiAlCl₄, and polymer lithium electrolyte.

144. The method of claim 131, wherein said electrolyte layer comprises a non-aqueous liquid lithium electrolyte.

145. The method of claim 144, wherein said electrolyte layer further comprises a solid-state separator.

146. The method of claim 131, wherein said step of depositing a first electrode layer comprises depositing a film having a thickness of between about 0.005 microns and about 20 microns.

147. The method of claim 131, wherein said step of depositing a first electrode layer comprises depositing a film having a thickness of between about 0.005 microns and about 5 microns.

148. The method of claim 131, wherein said step of depositing a second electrode layer comprises depositing a film having a thickness of between about 0.005 microns and about 20 microns.

149. The method of claim 131, wherein said step of depositing a second electrode layer comprises depositing a film having a thickness of between about 0.005 microns and about 5 microns.

150. A method of manufacturing a solid-state thin-film battery system comprising the steps of

providing a substrate having a first side and a second side,

depositing a first electrode layer on said first side of said substrate,

depositing a first electrolyte layer on said first electrode layer,

depositing a second electrode layer on said first electrolyte layer,

depositing a third electrode layer on said second side of said substrate,

depositing a second electrolyte layer on said third electrode layer, and

depositing a fourth electrode layer on said second electrolyte layer, wherein at least one of said fourth electrode layer, said third electrode layer, said second electrode layer, and said first electrode layer comprises Li_xV₂O_y, wherein 0<

x≦

100 and 0<

y≦

5.