Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same
First Claim
1. A method of making a three axis MEM tunneling/capacitive sensor comprising the steps of:
- (a) defining cantilevered beam structures for at least two orthogonally arranged sensors and associated mating structures on a first substrate or wafer, the at least two orthogonally arranged sensors having orthogonal directions of sensor sensitivity;
(b) forming a resonator structure of at least a third sensor on the first substrate or wafer, the third sensor being sensitive in a third direction orthogonal to both directions of sensor sensitivity of the two orthogonally arranged sensors, the resonator structure having a mating structure thereon;
(c) forming contact structures for at least two orthogonally arranged sensors and forming mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer;
(d) positioning the mating structures of the first substrate into a confronting relationship with the mating structures of the second substrate or wafer;
(e) eutecticly bonding a layer associated with said mating structures on the first substrate or wafer with a layer associated with the mating structures on the second substrate or wafer;
(f) removing at least a portion of the first substrate or wafer to release the cantilevered beam structures and the plate structure.
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Accused Products
Abstract
A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arranged sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer. The mating structures of the first substrate are disposed in a confronting relationship with the mating structures of the second substrate or wafer. A eutectic bonding layer associated with one of the mating structures facilitates bonding between the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure.
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Citations
78 Claims
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1. A method of making a three axis MEM tunneling/capacitive sensor comprising the steps of:
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(a) defining cantilevered beam structures for at least two orthogonally arranged sensors and associated mating structures on a first substrate or wafer, the at least two orthogonally arranged sensors having orthogonal directions of sensor sensitivity;
(b) forming a resonator structure of at least a third sensor on the first substrate or wafer, the third sensor being sensitive in a third direction orthogonal to both directions of sensor sensitivity of the two orthogonally arranged sensors, the resonator structure having a mating structure thereon;
(c) forming contact structures for at least two orthogonally arranged sensors and forming mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer;
(d) positioning the mating structures of the first substrate into a confronting relationship with the mating structures of the second substrate or wafer;
(e) eutecticly bonding a layer associated with said mating structures on the first substrate or wafer with a layer associated with the mating structures on the second substrate or wafer;
(f) removing at least a portion of the first substrate or wafer to release the cantilevered beam structures and the plate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 78)
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35. A three axis MEM tunneling sensor assembly for making a three axis MEM tunneling sensor therefrom, the assembly comprising:
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(a) orthogonally arranged beam structures, a resonator structure and associated mating structures defined on a first substrate or wafer;
(b) contact structures and mating structures defined on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer; and
(c) a pressure/heat sensitive bonding layer disposed on said mating structures on at least one of said first and second substrates or wafers for bonding the mating structures defined on the first substrate or wafer to mating structures on the second substrate in response to the application of pressure/heat therebetween. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
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60. A three axis MEM tunneling sensor assembly comprising:
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(a) orthogonally arranged beam structures, an associated resonator structure and associated mating structures arranged on a first substrate or wafer;
(b) one contact structures and associated mating structures defined on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer; and
(c) an eutectic bonding layer of disposed said mating structures on at least one of substrates or wafers for bonding the mating structures defined on the first substrate or wafer to mating structures on the second substrate in response to the application of pressure and heat therebetween, the mating structures being joined one to another at said eutectic bonding layer. - View Dependent Claims (61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77)
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Specification