Method for making semiconductor device, semiconductor element composite, electro-optical apparatus, and electronic system

• US 20040048447A1
• Filed: 06/24/2003
• Published: 03/11/2004
• Est. Priority Date: 07/11/2002
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kondo, Takayuki
• Granted Patent: US 6,943,050 B2
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: H01L 21/30612 Etching of AIIIBV compounds
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

The invention provides a method of fabricating a semiconductor device in which a more satisfactory selective etching ratio is ensured when AlGaAs is used for a layer provided with a semiconductor element, and provides a semiconductor element composite, an electro-optical apparatus, and an electronic system, each including the semiconductor device fabricated by the method. A method of fabricating a semiconductor device includes: forming a functional layer provided with a semiconductor element on a substrate with a sacrificial layer therebetween; and detaching the functional layer from the substrate by etching the sacrificial layer. The sacrificial layer is composed of an N-type Al(x1)Ga(1−x1)As layer and the functional layer is composed of an Al(x2)Ga(1−x2)As semiconductor layer, where x1>x2. Using hydrochloric acid or hydrofluoric acid with a concentration of 0.01% to 5% by weight as an etchant, the sacrificial layer is etched while the sacrificial layer is being irradiated with light.

Claims

1. A method of making a semiconductor device, comprising:

forming a functional layer provided with a semiconductor element on a substrate with a sacrificial layer therebetween; and

detaching the functional layer from the substrate by etching the sacrificial layer,

the sacrificial layer including an N-type Al(x1)Ga(1−

x1)As layer;

the functional layer including an Al(x2)Ga(1−

x2)As semiconductor layer, where x1>

x2;

at least one of hydrochloric acid and hydrofluoric acid with a concentration of 0.01% to 5% by weight being used as an etchant for the sacrificial layer; and

the sacrificial layer being etched by the etchant while the sacrificial layer is irradiated with light.

2. The method of making a semiconductor device according to claim 1, x1 in the sacrificial layer including the N-type Al(x1)Ga(1−

x1)As layer, and x2 in the functional layer including the Al(x2)Ga(1−

x2)As semiconductor layer, satisfying the relationship x1−

x2≧

0.1.

3. The method of making a semiconductor device according to claim 1, x1 in the sacrificial layer including the N-type Al(x1)Ga(1−

x1)As layer being 0.95 or more.

4. The method of making a semiconductor device according to claim 3, x1 in the sacrificial layer including the N-type Al(x1)Ga(1−

x1)As layer being 1.0.

5. The method of making a semiconductor device according to claim 1, further comprising:

attaching a film to the functional layer formed on the substrate, the functional layer provided with the semiconductor element being detached from the substrate in that state.

6. The method of making a semiconductor device according to claim 1, the semiconductor element including at least one of a light-emitting diode, a surface-emitting laser, a photodiode, a high electron mobility transistor, an inductor, a capacitor, a resistor, and a heterojunction bipolar transistor.

7. The method of making a semiconductor device according to claim 1, further comprising:

forming an isolating groove in the functional layer, the sacrificial layer being etched in that state to detach the functional layer from the substrate.

8. The method of making a semiconductor device according to claim 7, the isolating groove being formed by at least one of dry etching and wet etching.

9. The method of making a semiconductor device according to claim 7, the isolating groove having a depth that reaches at least the sacrificial layer.

10. The method of making a semiconductor device according to claim 9, the sacrificial layer being etched by placing the etchant into the isolating groove to detach the functional layer from the substrate.

11. The method of making a semiconductor device according to claim 1, further comprising:

bonding the detached functional layer provided with the semiconductor element to a second substrate that is different from the substrate.

12. The method of making a semiconductor device according to claim 11, the second substrate that is different from the substrate including at least one of silicon, quartz, sapphire, metal, ceramic, and plastic films.

13. The method of making a semiconductor device according to claim 11, further comprising:

connecting the semiconductor element provided on the functional layer, which is bonded to the second substrate that is different from the substrate, to a circuit disposed on the second substrate.

14. A semiconductor element composite, comprising:

a semiconductor device fabricated by the method according to claim 1.

15. An electro-optical apparatus, comprising:

a semiconductor device fabricated by the method according to claim 1.

16. The electro-optical apparatus according to claim 15, the electro-optical apparatus including a plurality of scanning lines and a plurality of data lines arrayed in a matrix, a switching device connected to the scanning lines and the data lines, and pixel electrodes connected to the switching device.

17. The electro-optical apparatus according to claim 15, the electro-optical apparatus including a light emitting element.

18. An electronic system, comprising:

the electro-optical apparatus according to claim 15.