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Devices containing platinum-iridium films and methods of preparing such films and devices

  • US 20040048467A1
  • Filed: 08/12/2003
  • Published: 03/11/2004
  • Est. Priority Date: 08/31/2000
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor structure, the method comprising:

  • providing a semiconductor substrate or substrate assembly;

    providing a precursor composition comprising one or more complexes of the formula;

    LyIrYz, wherein;

    each L group is independently a neutral or anionic ligand;

    each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3−

    x
    , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;

    y=1 to 4; and

    z=1 to 4;

    providing a precursor composition comprising one or more platinum complexes; and

    forming a platinum-iridium-containing film from the precursor compositions on a surface of the semiconductor substrate or substrate assembly, wherein the platinum-iridium-containing film has the formula platinum(x);

    iridium(1−

    x), wherein x is in the range of about about 0.99 to about 0.01.

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