Post thermal treatment methods of forming high dielectric layers in integrated circuit devices
First Claim
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1. A method for treating a high dielectric layer of a semiconductor device, comprising:
- nitriding a high dielectric layer on a silicon substrate, wherein said high dielectric layer comprises a nano laminate comprising a Group 3 metal oxide layer and a layer selected from the group consisting of a hafnium oxide layer and a zirconium oxide layer; and
post treating the high dielectric layer and silicon substrate.
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Abstract
High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.
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Citations
31 Claims
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1. A method for treating a high dielectric layer of a semiconductor device, comprising:
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nitriding a high dielectric layer on a silicon substrate, wherein said high dielectric layer comprises a nano laminate comprising a Group 3 metal oxide layer and a layer selected from the group consisting of a hafnium oxide layer and a zirconium oxide layer; and
post treating the high dielectric layer and silicon substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for treating a high dielectric layer of a semiconductor device, comprising:
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nitriding a silicon substrate and a high dielectric layer on said silicon substrate, said high dielectric layer comprising at least one layer selected from the group consisting of a hafnium oxide layer, a zirconium oxide layer, and a Group 3 metal oxide layer; and
then annealing the silicon substrate and high dielectric layer. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method for treating a high dielectric layer of a semiconductor device, comprising:
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nitriding a silicon substrate and a high dielectric layer on said silicon substrate, said high dielectric layer comprising at least one layer selected from the group consisting of a hafnium oxide layer, a zirconium oxide layer, and a Group 3 metal oxide layer; and
then oxidizing the silicon substrate and high dielectric layer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A method for treating a high dielectric layer of a semiconductor device, comprising:
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nitriding a silicon substrate and a high dielectric layer on said silicon substrate, said high dielectric layer comprising at least one layer selected from the group consisting of a hafnium oxide layer, a zirconium oxide layer, and a Group 3 metal oxide layer; and
thenoxidizing the silicon substrate and high dielectric layer; and
annealing the nitrided and oxidized silicon substrate and high dielectric layer. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A method for treating a high dielectric layer of an integrated circuit device, comprising nitriding to provide a nitride profile concentration in the high dielectric layer that is greater adjacent to the polysilicon/high dielectric layer interface than adjacent to a silicon/high dielectric layer interface.
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