Semiconductor device and manfacturing method thereof

• US 20040051100A1
• Filed: 08/18/2003
• Published: 03/18/2004
• Est. Priority Date: 05/20/1999
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hirakata, Yoshiharu, Murakami, Satoshi, Yamazaki, Shunpei
• Granted Patent: US 6,950,168 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

A method of forming a storage capacitor in an IPS liquid crystal display device is proposed, and a technique of forming a pixel region having a high aperture ratio is provided. An anodic oxidation process at an applied voltage/voltage supply time ratio of 11 V/min is performed for insulating films used in each circuit of an electro-optical device, typically an IPS method LCD, in particular for the surface of a common electrode formed on a resin film. The amount of formation of the extra anodic oxide film can be reduced by covering with an anodic oxide film, and a liquid crystal display device with high reliability and having an electrode with superior adhesion can be manufactured.

Claims

1. A semiconductor device comprising:

a pair of substrates and a liquid crystal layer sandwiched by the pair of substrates,

a pixel electrode formed on one of the pair of substrates; and

a capacitor formed by a common electrode, an oxide film of at least a portion of the common electrode, and the pixel electrode formed on the oxide film,

wherein an electric field parallel to the face of the substrates is applied between the pixel electrode and the common electrode.

2. A device according to claim 1, wherein the common electrode comprises a material which can be anodically oxidized.

3. A device according to claim 1, wherein the oxide film is formed through an anodic oxidation process in which the applied voltage/voltage supply time ratio is equal to or greater than 11 V/min.

4. A video camera, a digital camera, a projector, a goggle type display, a car navigation system, a personal computer, or a portable information terminal using the semiconductor device according to claim 1.

5. A semiconductor device comprising:

a pair of substrates and a liquid crystal layer sandwiched by the pair of substrates;

a pixel electrode formed on one of the pair of substrates; and

a capacitor formed by a common electrode, an anodic oxide film of at least a portion of the common electrode, and the pixel electrode formed on the anodic oxide film,

wherein the liquid crystal layer is surrounded by a sealing material, and spacers are formed in the region in which the sealing material is formed, and

wherein an electric field parallel to the face of the substrates is applied between the pixel electrode and the common electrode.

6. A device according to claim 5, wherein the oxide film is formed through an anodic oxidation process in which the applied voltage/voltage supply time ratio is equal to or greater than 11 V/min.

7. A video camera, a digital camera, a projector, a goggle type display, a car navigation system, a personal computer, or a portable information terminal using the semiconductor device according to claim 5.

8. A semiconductor device comprising:

a pair of substrates and a liquid crystal layer sandwiched by the pair of substrates;

a pixel electrode formed on one of the pair of substrates;

a capacitor formed by a common electrode, an anodic oxide film of at least a portion of the common electrode, and the pixel electrode formed on the anodic oxide film;

a spacer formed in a region between a pixel portion, in which the pixel electrode is formed, and a driver circuit; and

a spacer formed in a region in which an element of the driver circuit does not exist,

wherein an electric field parallel to the face of the substrates is applied between the pixel electrode and the common electrode.

9. Advice according to claim 8, wherein the oxide film is formed through an anodic oxidation process in which the applied voltage/voltage supply time ratio is equal to or greater than 11 V/min.

10. A video camera, a digital camera, a projector, a goggle type display a car navigation system, a personal computer, or a portable information terminal using the semiconductor device according to claim 8.

11. A semiconductor device comprising:

a pair of substrates and a liquid crystal layer sandwiched by the pair of substrates;

a pixel electrode formed on one substrate out of the pair of substrates,

a capacitor formed by a common electrode, an anodic oxide film of at least a portion of the common electrode, and the pixel electrode formed on the anodic oxide film; and

a spacer over a contact portion of the pixel electrode,

wherein an electric field parallel to the face of the substrates is applied between the pixel electrode and the common electrode;

12. Advice according to claim 11, wherein the oxide film is formed through an anodic oxidation process in which the applied voltage/voltage supply time ratio is equal to or greater than 11 V/min.

13. A video camera, a digital camera, a projector, a goggle type display, a car navigation system, a personal computer, or a portable information terminal using the semiconductor device according to claim 11.

14. A method of manufacturing a semiconductor device, comprising steps of:

forming a resin film on an upper part of a TFT;

forming a common electrode on the resin film;

forming an oxide film of the common electrode; and

forming a pixel electrode covering at least a portion of the oxide film,

wherein a capacitor is formed by the common electrode, the oxide film of the common electrode, and the pixel electrode.

15. A method according to claim 14, wherein sputtering is used for the step of forming the inorganic film on the resin film.

16. A method according to claim 14, wherein the step of forming the oxide film is an anodic oxidation process in which the applied voltage/voltage supply time ratio is equal to or greater than 11 V/min.

17. A method of manufacturing a semiconductor device, comprising steps of:

forming a resin film on a TFT;

forming an inorganic film on the resin film;

forming a common electrode on the resin film;

forming an oxide film of the common electrode; and

forming a pixel electrode covering at least a portion of the oxide film,

wherein a capacitor is formed by the common electrode the oxide film of the common electrode, and the pixel electrode.

18. A method according to claim 17, wherein sputtering is used for the step of forming the inorganic film on the resin film.

19. A method according to claim 17, wherein the step of forming the oxide film is an anodic oxidation process in which the applied voltage/voltage supply time ratio is equal to or greater than 11 V/min.