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Group lll nitride emitting devices with gallium-free layers

  • US 20040051108A1
  • Filed: 06/27/2003
  • Published: 03/18/2004
  • Est. Priority Date: 12/28/2000
  • Status: Active Grant
First Claim
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1. A semiconductor structure (10) for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum, said structure (10) comprising:

  • a first cladding layer (11) of AlxInyGa1-x-yN, where 0≦

    x≦

    1 and 0≦

    y≦

    1 and (x+y)≦

    1;

    a second cladding layer (12) of AlxInyGa1-x-yN, where 0≦

    x≦

    1 and 0≦

    y≦

    1 and (x+y)≦

    1; and

    an active layer (13) of AlxInyGa1-x-yN, where 0≦

    x≦

    1 and 0≦

    y≦

    1 and 0≦

    (x+y)≦

    1, said active layer (13) positioned between said first cladding layer (11) and said second cladding layer (12);

    wherein said first and second cladding layers (11-12) have respective bandgaps that are each larger than the bandgap of said active layer (13); and

    wherein at least one of the layers selected from the group consisting of said first cladding layer (11), said second cladding layer (12), and said active layer (13) is characterized by the absence of gallium.

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