Liquid crystal display device and method of fabricating the same

• US 20040051823A1
• Filed: 08/12/2003
• Published: 03/18/2004
• Est. Priority Date: 09/17/2002
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Choi, Woo Hyuk
• Granted Patent: US 6,940,567 B2
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

The present invention relates to a liquid crystal display and a method of fabricating the same that is capable of reducing an optical pumping current.

The liquid crystal display comprises a gate line having a bending part in at least one side, a data line crossing the gate line on the first substrate, a pixel electrode formed at a pixel area defined by the gate line and the data line, a drain electrode of a thin film transistor connected to the pixel electrode, and a semiconductor layer overlapping at least part of the gate line, the drain electrode, and the data line to form a channel of the thin film transistor, wherein the bending part is disposed between the drain electrode and the data line.

Claims

1. A liquid crystal display device, comprising:

a gate line having a bending part in at least one side;

a data line crossing the gate line on the first substrate;

a pixel electrode formed at a pixel area defined by the gate line and the data line;

a drain electrode of a thin film transistor connected to the pixel electrode; and

a semiconductor layer overlapping at least part of the gate line, the drain electrode, and the data line to form a channel of the thin film transistor,

wherein the bending part is disposed between the drain electrode and the data line.

2. The device according to claim 1, further comprising a gate insulating film having a plurality of projections and a plurality of grooves.

3. The device according to claim 2, wherein the dot matrix pattern includes the projections and grooves.

4. The device according to claim 2, further comprising a protective film on an entire surface of the first substrate.

5. The device according to claim 4, wherein the protective film includes a plurality of projections and grooves corresponding to the projections and grooves of the gate insulating film.

6. The device according to claim 1, further comprising an ohmic contact layer on the semiconductor layer.

7. The device according to claim 1, wherein the drain electrode includes a first part extending a direction of the gate line and a second part extending at an angle from the first part.

8. The device according to claim 7, wherein the dot matrix pattern is disposed between the second part of the drain electrode and the data line.

9. The device according to claim 1, wherein the gate line covers the channel of the thin film transistor.

10. A method of fabricating a liquid crystal display device, comprising steps of:

forming a gate line having a plurality of dot patterns on a first substrate;

forming a gate insulating film to cover the gate line on the first substrate;

forming a semiconductor layer having a first width overlapping a second width of the gate line, the first width less than the second width;

forming a data line crossing the gate line;

forming a drain electrode facing the data line with the dot pattern therebetween;

forming a protective film having a contact hole to expose the drain electrode; and

forming a pixel electrode on the protective film connected to the drain electrode.

11. The method according to claim 10, wherein the step of forming the gate insulating film includes forming a plurality of projections and a plurality of grooves.

12. The method according to claim 11, wherein the plurality of projections and grooves correspond to the plurality of dot patterns.

13. The method according to claim 12, wherein the protective film includes a plurality of projections and grooves corresponding to the projections and grooves of the gate insulating film.

14. The method according to claim 10, wherein the drain electrode includes a first part extending along a direction of the gate line and a second part extending at an angle from the first part.

15. The method according to claim 14, wherein the plurality of dot patterns are formed between the second part of the drain electrode and the data line.

16. The method according to claim 10, further comprising forming an ohmic contact layer on the semiconductor layer.

17. The method according to claim 10, wherein the gate line covers a channel region of the semiconductor layer.

18. The method according to claim 10, wherein the steps of forming a data line and a drain electrode are performed simultaneously.

19. The method according to claim 18, wherein the simultaneous formation of the data line and the drain electrode includes a mask having a shield portion, a semi-transparent portion, and a full exposure portion.