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Process for transferring a layer of strained semiconductor material

  • US 20040053477A1
  • Filed: 07/09/2003
  • Published: 03/18/2004
  • Est. Priority Date: 07/09/2002
  • Status: Active Grant
First Claim
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1. A method of preparing a semiconductor wafer, which comprises:

  • creating a region of weakness in a matching substrate that comprises a matching layer with a first lattice parameter on a first surface, wherein the region of weakness is configured to facilitate splitting;

    growing on the first surface of the matching layer a first strained layer of a first semiconductor material in a strained state to impart the same first lattice parameter in the first strained layer as in the matching layer;

    associating a receiving substrate with the first strained layer to form a composite structure; and

    obtaining a product wafer and a donor wafer by splitting the composite structure at the region of weakness, wherein the product wafer includes the strained first layer and the receiving substrate, while the donor wafer includes at least a portion of the matching layer.

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