Method for forming metal films
First Claim
1. A method for forming a metal thin film, the method comprises the steps of:
- flowing a reaction gas into a reactor loaded therein a substrate;
flowing a metal precursor in a pulse form into the reactor;
activating the reaction gas by exiting a plasma in a pulse form to change with a pulse of the metal precursor in the reactor, alternately; and
depositing a metal thin film in a unit of an atomic layer by reacting the activated reaction gas with the metal precursor.
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Accused Products
Abstract
A method for forming a metal thin film is suitable for suppressing the deterioration of a throughput according to enlarging a purge time to prevent the metal precursor from mixing with a reaction gas in a reactor during the deposition of an atomic layer. The method includes the steps of flowing a reaction gas into a reactor loaded therein a substrate, flowing a metal precursor in a pulse form into the reactor, activating the reaction gas by exiting a plasma in a pulse form to change with a pulse of the metal precursor in the reactor, alternately and depositing a metal thin film in a unit of an atomic layer by reacting the activated reaction gas with the metal precursor.
42 Citations
16 Claims
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1. A method for forming a metal thin film, the method comprises the steps of:
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flowing a reaction gas into a reactor loaded therein a substrate;
flowing a metal precursor in a pulse form into the reactor;
activating the reaction gas by exiting a plasma in a pulse form to change with a pulse of the metal precursor in the reactor, alternately; and
depositing a metal thin film in a unit of an atomic layer by reacting the activated reaction gas with the metal precursor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for forming a metal thin film, the method comprises the steps of:
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loading a substrate in a reactor;
flowing a reaction gas and a base gas into the reactor;
supplying a metal precursor solved in an organic solvent in a form of a pulse into the reactor;
activating the reaction gas by exiting a plasma in a pulse form to change with a pulse of the metal precursor in the reactor, alternately; and
depositing a metal thin film in a unit of an atomic layer by reacting the activated reaction gas with the metal precursor. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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Specification