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Method for forming metal films

  • US 20040053496A1
  • Filed: 12/27/2002
  • Published: 03/18/2004
  • Est. Priority Date: 09/17/2002
  • Status: Active Grant
First Claim
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1. A method for forming a metal thin film, the method comprises the steps of:

  • flowing a reaction gas into a reactor loaded therein a substrate;

    flowing a metal precursor in a pulse form into the reactor;

    activating the reaction gas by exiting a plasma in a pulse form to change with a pulse of the metal precursor in the reactor, alternately; and

    depositing a metal thin film in a unit of an atomic layer by reacting the activated reaction gas with the metal precursor.

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