Wafer backside electrical contact for electrochemical deposition and electrochemical mechanical polishing

• US 20040055893A1
• Filed: 09/23/2002
• Published: 03/25/2004
• Est. Priority Date: 09/23/2002
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Dordi, Yezdi, Lubomirsky, Dmitry, Yang, Michael X., Yu, Jick M., Chen, Fusen, Tulshibagwale, Sheshraj, Grunes, Howard E.
• Application Number:
  US10/253,240
• Publication Number:
  US 20040055893A1
• Time in Patent Office: Days
• US Class Current: 205/123
• CPC Class Codes: C25D 17/06 Suspending or supporting devices for articles to be coated
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition

Abstract

A method and apparatus for electrochemically plating on a production surface of a substrate are provided. The apparatus generally includes a plating cell having a plating solution reservoir configured to contain a volume of an electrochemical plating solution, and a substrate support member positioned above the plating solution reservoir, the substrate support member being configured to electrically engage a non-production side of a substrate secured thereto. The substrate support member generally includes a substrate support surface having at least one vacuum channel formed therein, a plurality of electrical contact pins extending from the substrate support surface and being positioned to engage a perimeter of the non-production side of the substrate secured thereto, and at least one annular seal positioned on the substrate support surface radially outward of the plurality of electrical contact pins, the at least one annular seal being configured to prevent flow of the electrochemical plating solution to the plurality of electrical contact pins. The plating cell further includes a power supply in electrical communication with an anode positioned in the electrochemical plating solution and the plurality of electrical contact pins.

Claims

1. An electrochemical plating cell, comprising:

a plating solution reservoir configured to contain a volume of an electrochemical plating solution;

a substrate support member positioned above the plating solution reservoir, the substrate support member being configured to electrically engage a non-production side of a substrate secured thereto, the substrate support member comprising;

a substrate support surface having at least one vacuum channel formed therein, the substrate support surface facing the plating solution reservoir;

a plurality of electrical contact pins extending from the substrate support surface and being positioned to engage a perimeter of the non-production side of the substrate secured thereto; and

at least one annular seal positioned on the substrate support surface radially outward of the plurality of electrical contact pins, the at least one annular seal being configured to prevent flow of the electrochemical plating solution to the plurality of electrical contact pins; and

a power supply in electrical communication with an anode positioned in the electrochemical plating solution and the plurality of electrical contact pins.

2. The electrochemical plating cell of claim 1, wherein the volume of the electrochemical plating solution in the plating solution reservoir comprises between about 1.0 liters and about 5 liters.

3. The electrochemical plating cell of claim 1, wherein the volume of the electrochemical plating solution comprises between about 1.75 liters and about 2.25 liters.

4. The electrochemical plating cell of claim 1, further comprising a head assembly in mechanical communication with the substrate support member, the head assembly being configured to impart at least one of rotational, vertical, horizontal, and pivotal movement to the substrate support member.

5. The electrochemical plating cell of claim 1, wherein the plating solution reservoir further comprises:

an inner basin;

an outer basin positioned around the inner basin and being configured to collect overflow fluid from the inner basin;

an anode positioned in a lower portion of the inner basin;

a diffusion plate positioned above the anode; and

a separation membrane positioned between the anode and the diffusion plate.

6. The electrochemical plating cell of claim 5, wherein the inner basin is configured to hold a volume of between about 0.5 liters and about 5 liters of the electrolyte solution.

7. The electrochemical plating cell of claim 1, wherein the at least one vacuum channel is selectively in fluid communication with a vacuum source and is configured to vacuum chuck the non-production side of the substrate to the substrate support surface.

8. The electrochemical plating cell of claim 1, wherein the substrate support surface is configured to secure a substrate thereto using only contacts on the non-production side of the substrate.

9. The electrochemical plating cell of claim 1, wherein the plurality of electrical contact pins are manufactured from at least one of copper, platinum, and gold.

10. An apparatus for electrochemically plating metal onto a substrate, comprising:

a substrate support member having a substrate support surface formed thereon, the substrate support member being configured vacuum chuck a non-production side of the substrate to the substrate support surface and electrically engage non-production side of the substrate;

plating bath positioned below the substrate support member, the plating bath being configured to contain an electrochemical plating solution and an anode therein; and

a head assembly in mechanical communication with the substrate support member, the head assembly being configured actuate the substrate support member in at least one of horizontally, vertically, pivotally, and rotationally to support the substrate in a face down configuration in the plating bath.

11. The apparatus of claim 10, wherein the plating bath comprises an inner basin configured to contain a plating solution, the inner basin being positioned within an outer basin that is configured to collect overflow from the inner basin.

12. The apparatus of claim 10, wherein the substrate support surface comprises at least one vacuum channel in fluid communication with vacuum source.

13. The apparatus of claim 10, wherein the substrate support surface comprises a plurality of electrical contact pins extending therefrom.

14. The apparatus of claim 13, wherein the plurality of electrical contact pins are positioned substantially in a circular pattern proximate a perimeter of the substrate support surface.

15. The apparatus of claim 10, wherein the substrate support surface comprises at least one seal positioned radially outward from a plurality of electrical contact pins, the at least one seal being configured to prevent the electrochemical plating solution from flowing to the plurality of electrical contact pins during plating operations.

16. A method for electrochemically plating metal onto a substrate, comprising:

depositing a seed layer on a production surface of the substrate, the seed layer extending around a bevel edge of the substrate onto at least a portion of a non-production surface of the substrate;

vacuum chucking the non-production surface of the substrate to a substrate support member;

immersing the production surface of the substrate in an electrochemical plating solution having an anode positioned therein; and

providing an electrical plating bias between the production surface of the substrate and the anode via electrically connecting the portion of the seed layer that extends onto at least a portion of the non-production surface with a cathode terminal of a power supply and electrically connecting the anode with an anode terminal of a power supply.

17. The method of claim 16, wherein depositing the seed layer comprises using a first physical vapor deposition process to form a production surface seed layer and using a second physical vapor deposition process to form a seed layer extension that extends over a bevel edge of the substrate and onto at least a portion of the non-production surface of the substrate.

18. The method of claim 17, wherein the second physical vapor deposition process comprises positioning a ring member between a deposition target and the non-production surface of the substrate.

19. The method of claim 16, wherein vacuum chucking the substrate comprises providing low pressure to at least one vacuum channel formed into a substrate support surface of the substrate support member.

20. The method of claim 16, wherein the production surface of the substrate is free of mechanical, electrical, and sealing contacts.

21. The method of claim 16, wherein providing an electrical plating bias between the production surface of the substrate and the anode further comprises positioning a plurality of electrical contact pins that are in electrical communication with the cathode terminal of the power supply on the substrate support member.

22. The method of claim 16, wherein providing the electrical bias comprises electrically engaging the non-production surface of the substrate with a plurality of electrical contact pins positioned on the substrate support member, the plurality of contact pins operating to electrically engage the substrate once the substrate is vacuum chucked to the substrate support member.

23. The method of claim 22, further comprising positioning a seal member radially outward of the plurality of contact pins, the seal member operating to prevent the electrochemical plating solution from flowing to the plurality of contact pins.