Gallium nitride semiconductor device and method of producing the same

• US 20040056267A1
• Filed: 05/27/2003
• Published: 03/25/2004
• Est. Priority Date: 05/29/2002
• Status: Abandoned Application

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Asatsuma, Tsunenori, Nakajima, Hiroshi, Tojo, Tsuyoshi, Goto, Osamu
• Application Number:
  US10/445,601
• Publication Number:
  US 20040056267A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

The present invention provides a gallium nitride semiconductor device including an electrode composed of a metallic film on an underlying gallium nitride compound semiconductor layer. The gallium nitride semiconductor device is characterized in that recessed portions are present dispersely over the whole surface area of the underlying compound semiconductor layer in contact with the electrode metallic film in such a manner that at least two recessed portions having a depth greater than the lattice constant of crystals constituting the underlying compound semiconductor layer are present on a width direction line in any 1 μm width region of the whole surface area.

Claims

1. A gallium nitride semiconductor device comprising an electrode composed of a metallic film on an underlying gallium nitride compound semiconductor layer (hereinafter referred to as underlying compound semiconductor layer), wherein

recessed portions are present dispersely over the whole surface area of said underlying compound semiconductor layer in contact with said electrode metallic film in such a manner that at least two recessed portions having a depth greater than the lattice constant of crystals constituting said underlying compound semiconductor layer are present on a width direction line in any 1 μ

m width region of said whole surface area.

6. A gallium nitride semiconductor device as set forth in claim 1, wherein said underlying compound semiconductor layer is a p-type semiconductor layer.

7. A gallium nitride semiconductor layer as set forth in claim 6, wherein said gallium nitride semiconductor device is a light-emitting device.

2. A gallium nitride semiconductor device comprising an electrode composed of a metallic film on an underlying gallium nitride compound semiconductor layer (hereinafter referred to as underlying compound semiconductor layer), wherein

rugged portions are present dispersely over the whole surface area of said underlying compound semiconductor layer in contact with said electrode metallic film in such a manner that at least two rugged portions in which the height difference (step) between a crest portion of a projected portion constituting said rugged portion and a bottom portion of a recessed portion adjacent to said projected portion is greater than the lattice constant of crystals constituting said underlying compound semiconductor layer are present on a width direction line in any 1 μ

m width region of said whole surface area.

3. A gallium nitride semiconductor device comprising an electrode composed of a metallic film on an underlying gallium nitride compound semiconductor layer (hereinafter referred to as underlying compound semiconductor layer), wherein

rugged portions are present dispersely over the whole surface area of said underlying compound semiconductor layer in contact with said electrode metallic film, and all said rugged portions present in any 1 μ

m square region of said whole surface area have an Rms (standard deviation of height) of said rugged portions of greater than 0.25 nm.

4. A gallium nitride semiconductor device comprising an electrode composed of a metallic film on an underlying gallium nitride compound semiconductor layer (hereinafter referred to as underlying compound semiconductor layer), wherein

groove form rugged portions having a depth greater than the lattice constant of crystals constituting said underlying compound semiconductor layer and a groove width of 3 to 100 nm are present in an irregular network form at an interval of 5 to 300 nm over the whole surface area of said underlying compound semiconductor layer in contact with said electrode metallic film.

5. A gallium nitride semiconductor device as set forth in claim 4, wherein all rugged portions present in any 1 μ

m square region of said whole surface area have an Rms (standard deviation of height) of said rugged portions of greater than 0.25 nm.

8. A method of producing a gallium nitride semiconductor device comprising an electrode composed of a metallic film on an underlying gallium nitride compound semiconductor layer (hereinafter referred to as underlying compound semiconductor layer), wherein, in growing said underlying compound layer, said method comprises the steps of:

epitaxially growing said underlying compound layer in a predetermined film thickness at a first predetermined temperature, and thereafter lowering the temperature to a second predetermined temperature lower than said first predetermined temperature while continuedly introducing raw material gases for growing the underlying compound semiconductor into a film formation chamber;

maintaining the system at said second predetermined temperature for a predetermined period of time; and

subsequently stopping the supply of the raw material gases other than a nitrogen raw material gas, and lowering the temperature to room temperature while continuedly introducing said nitrogen raw material gas.

9. A method of producing a gallium nitride semiconductor device as set forth in claim 8, wherein, at the time of forming said underlying compound semiconductor layer of GaN, said first predetermined temperature is 800 to 1050°

C., said second predetermined temperature is 400 to 850°

C., and said predetermined period of time is 5 to 60 sec.