Capacitively coupled plasma reactor with uniform radial distribution of plasma
First Claim
1. A plasma reactor comprising:
- a side wall and an overhead ceiling defining a chamber;
a workpiece support cathode within the chamber having a working surface facing said ceiling for supporting a semiconductor workpiece;
process gas inlets for introducing a process gas into said chamber;
an RF bias power generator having a bias power frequency;
a bias power feed point at said working surface;
an RF conductor connected between said RF bias power generator and said bias power feed point at said working surface; and
a dielectric sleeve surrounding a portion of said RF conductor, said sleeve having an axial length along said RF conductor, a dielectric constant and an axial location along said RF conductor, said length, dielectric constant and location of said sleeve being such that said sleeve provides a reactance that enhances plasma ion density uniformity over said working surface.
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Accused Products
Abstract
A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.
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Citations
53 Claims
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1. A plasma reactor comprising:
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a side wall and an overhead ceiling defining a chamber;
a workpiece support cathode within the chamber having a working surface facing said ceiling for supporting a semiconductor workpiece;
process gas inlets for introducing a process gas into said chamber;
an RF bias power generator having a bias power frequency;
a bias power feed point at said working surface;
an RF conductor connected between said RF bias power generator and said bias power feed point at said working surface; and
a dielectric sleeve surrounding a portion of said RF conductor, said sleeve having an axial length along said RF conductor, a dielectric constant and an axial location along said RF conductor, said length, dielectric constant and location of said sleeve being such that said sleeve provides a reactance that enhances plasma ion density uniformity over said working surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A plasma reactor comprising:
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a side wall and an overhead ceiling defining a chamber, said overhead ceiling comprising an overhead electrode;
a workpiece support cathode within said chamber having a working surface facing said ceiling for supporting a semiconductor workpiece;
process gas inlets for introducing a process gas into said chamber;
an RF bias power generator having a bias power frequency;
a bias power feed point at said working surface;
an RF conductor connected between said RF bias power generator and said bias power feed point and a dielectric sleeve surrounding a section of length of said conductor;
a source power generator having a source frequency;
an impedance match element connected between said source power generator and said overhead electrode;
said feed point having an impedance at said source power frequency;
wherein the reactance of said sleeve reduces the impedance of said feed point at said source frequency to at least nearly zero Ohms. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A plasma reactor comprising:
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a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within said chamber having a working surface facing said ceiling for supporting a planar workpiece, said workpiece support and said ceiling together defining a processing region between said workpiece support and said ceiling;
process gas inlets for furnishing process gas into said chamber;
an RF bias power generator having a bias frequency;
at least a first overhead solenoidal electromagnet adjacent said ceiling, said overhead solenoidal electromagnet, said ceiling, said sidewall and said workpiece support being located along a common axis of symmetry; and
a current source connected to said first solenoidal electromagnet and furnishing a first electric current in said first solenoidal electromagnet whereby to generate within said chamber a magnetic field which is a function of said first electric current, said first electric current having a value such that said magnetic field increases uniformity of plasma ion density radial distribution about said axis of symmetry near said working surface;
a bias power feed point at said working surface;
an RF conductor connected between said RF bias power generator and said bias power feed point at said working surface; and
a dielectric sleeve surrounding a portion of said RF conductor, said sleeve having an axial length along said RF conductor, a dielectric constant and an axial location along said RF conductor, said length, dielectric constant and location of said sleeve being such that said sleeve provides a reactance that enhances plasma ion density uniformity over said working surface. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53)
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Specification