Magnetic random access memory
First Claim
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1. A magnetic random access memory comprising:
- a memory cell array determining an element having a magnetic layer as a memory cell;
a first write line used to write data in said memory cell;
a first decoder which selects said first write line based on a first address signal; and
a first driver which is connected to one end of said first write line, and supplies a write current to said first write line when said first write line is selected by said first decoder, wherein said first decoder is maintained in a non-active state until an initialization operation of an internal circuit is completed after turning on a power supply.
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Abstract
One end of a write word line is connected to a decoder/driver unit. The decoder/driver unit is constituted by a P channel MOS transistor, an N channel MOS transistor, and an NAND circuit. When WRITE, CHRDY and RA1 all become “H”, an output signal from the NAND circuit becomes “H”, and a write current flows through the write word line. CHRDY is a signal which becomes “H” upon completion of an initialization operation of all internal circuits after turning on a power supply. A limiting circuit is constituted by a clamp circuit which limits a potential of a write word line to a fixed value or a lower value.
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11 Claims
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1. A magnetic random access memory comprising:
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a memory cell array determining an element having a magnetic layer as a memory cell;
a first write line used to write data in said memory cell;
a first decoder which selects said first write line based on a first address signal; and
a first driver which is connected to one end of said first write line, and supplies a write current to said first write line when said first write line is selected by said first decoder, wherein said first decoder is maintained in a non-active state until an initialization operation of an internal circuit is completed after turning on a power supply. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification