Method and system for elevated temperature measurement with probes designed for room temperature measurement

• US 20040057497A1
• Filed: 09/24/2002
• Published: 03/25/2004
• Est. Priority Date: 09/24/2002
• Status: Active Grant

• Current Assignee: Semiconductor Diagnostics, Inc. (SEMILAB Félvezeto Fizikai Laboratórium Zrt.)
• Original Assignee: Semiconductor Diagnostics, Inc. (SEMILAB Félvezeto Fizikai Laboratórium Zrt.)
• Inventors: Gossett, Frank, Kochey, Nick, Lagowski, Jacek J., Savtchouk, Alexandre, Edelman, Piotr
• Granted Patent: US 6,771,091 B2
• Time in Patent Office: Days
• US Class Current: 374/163
• CPC Class Codes: G01K 1/12 for preventing damage due to heat overloading
• CPC Class Codes: G01K 7/02 using thermoelectric elements, e.g. thermocouples
• CPC Class Codes: G01K 7/42 Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature

Abstract

Techniques for measuring a contact potential difference of a sample at an elevated temperature using a probe designed for room temperature measurement are disclosed. In such measurements, probe damage by excessive heating can be prevented without any probe modifications to include probe cooling. This can be achieved by minimizing the time the probe spends in close proximity to the heated sample. Furthermore, the effect of probe heating by the sample on the probe reading can be corrected by including an additional contact potential difference measurement of a reference plate kept at room temperature in the measurement cycle.

Claims

1. A method for elevated sample temperature measurement, a method comprising:

heating a sample to a sample temperature, T;

moving a probe from a first position to a second position, wherein the first position is proximate to a reference plate held at constant temperature, T₀, and the second position is proximate to the sample, and T is greater than T₀;

measuring a contact potential difference of the sample, V_CPDS, with the probe being held in the second position for a measuring time, Δ

t_measure, sufficiently short to prevent substantial heating of the probe;

returning the probe to the first position;

measuring a contact potential difference of the reference plate, V_CPDR; and

determining a difference Δ

V_CPD=V_CPDS−

V_CPDR as a measure of a sample contact potential at T.

2. The method of claim 1, wherein the probe is not actively cooled while in the second position.

3. The method of claim 1 wherein Δ

t_measure is 2 seconds or less.

4. The method of claim 1, further comprises holding the probe in the first position for a probe resting period, Δ

t_rest, of 5 seconds or more after returning the probe to the first position.

5. The method of claim 1 wherein T₀ is less than 30°

C.

6. The method of claim 1 wherein during the measurement of V_CPDS and V_CPDR, the temperature of the probe is kept within 2°

C. of T₀.

7. The method of claim 1 wherein T is between T₀ and 500°

C.

8. The method of claim 1, wherein the sample comprises a dielectric layer

9. The method of claim 1, wherein the reference plate comprises gold or platinum.

10. The method of claim 1, further comprising cycling the probe between the first position and the second position, and during each cycle, measuring V_CPDS in the second position and V_CPDR in the first position;

and

determining a sample contact potential difference from a difference between V_CPDS and V_CPDR from each cycle.

11. The method of claim 10, further comprising changing the sample temperature between measuring V_CPDS of successive cycles and measuring the sample temperature, T, each time the probe measures V_CPDS.

12. The method of claim 11, further comprising determining a dependence of Δ

V_CPD on the sample temperature.

13. The method of claim 12, wherein a corona charge is deposited on sample surface prior to changing the sample temperature.

14. The method of claim 13, further comprising identifying contaminant ions present in the sample from the dependence of Δ

V_CPD on the sample temperature.

15. The method of claim 14, further comprising determining the concentration of each contaminant ion in the sample from the dependence of Δ

V_CPD on the sample temperature.

16. The method of claim 13, further comprising monitoring desorption of contaminants from the sample from a rate of change of the dependence of Δ

V_CPD on the sample temperature.

17. A system;

comprising;

a sample stage for supporting a sample;

a heating element for heating the sample to a sample temperature;

a reference;

a probe for making contact potential difference measurements mounted on a probe arm; and

an electronic controller, which during operation causes the probe arm to position the probe relative the sample to measure a contact potential difference between the probe and the sample, and then causes the probe arm to position the probe relative to the reference and to measure a second contact potential difference between the probe and the reference.

18. The system of claim 17, further comprising a cooling element positioned relative the reference sample, wherein during operation the cooling element stabilizes the reference plate temperature.

19. The system of claim 17, wherein the probe is a Kelvin probe, a Monroe probe, or a Trek probe.

20. A method, comprising:

moving a probe at a first temperature from a first position to a second position, wherein the first position is proximate to a reference at the first temperature and the second position is proximate to a sample, the sample being heated to a sample temperature greater than the first temperate;

measuring a first contact potential difference of the sample with the probe in the second position;

returning the probe to the first position; and

measuring a second contact potential difference of the reference;

wherein the probe is held in the second position for a period wherein the probe'"'"'s temperature is substantially unchanged from the first temperature during the measuring.