Method for selecting reference images, method and apparatus for inspecting patterns on wafers, and method for dividing a wafer into application regions

• US 20040057611A1
• Filed: 05/22/2003
• Published: 03/25/2004
• Est. Priority Date: 09/23/2002
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Byoung-Ho, Kim, Deok-Yong
• Granted Patent: US 7,200,258 B2
• Time in Patent Office: Days
• US Class Current: 382/145
• CPC Class Codes: G01N 21/95607 using a comparative method
• CPC Class Codes: G03F 7/7065 Defects, e.g. optical inspection of patterned layer for defects
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 7/0002 Inspection of images, e.g. flaw detection
• CPC Class Codes: G06T 7/001 using an image reference approach

Abstract

A method for selecting reference images, a method and an apparatus for inspecting patterns on a wafer, and a method for dividing a wafer into application regions. In a method for inspecting patterns according to at least one exemplary embodiment of the present invention, a plurality of reference dies may be selected and a difference in gray levels of images of the references dies may be determined. The reference dies may include a first die substantially centrally located on the wafer and at least one second die located at an edge portion of the wafer. One reference image is selected if the difference in gray levels is within a permitted tolerance and more than one reference image may be selected if the difference in gray levels is not within the permitted tolerance. A pattern inspection may be performed using the reference images.

Claims

1. A method of selecting reference images comprising:

determining a tolerance for a difference between gray levels of dies located on a wafer;

selecting a first die and at least one second die;

obtaining images of the first die and the at least one second die;

measuring the gray levels of the images obtained from the first die and the at least one second die;

determining a difference in the measured gray levels of the first die and the at least one second die; and

selecting at least one reference image;

wherein one image selected from the images obtained from the first die and the at least one second die is selected as the reference image when the difference between the measured gray levels is within the tolerance; and

wherein the image obtained from the first die and one of the images obtained from the at least one second die are selected as reference images when the difference between the measured gray levels is not within the tolerance.

2. The method of selecting reference images according to claim 1, further comprising:

selecting at least one third die, the at least one third die being located in a region of the wafer between the first die and the at least one second die;

measuring the gray levels of the images obtained from the at least one third die; and

determining the difference in the measured gray levels of the at least one third die and the gray levels of the first die and the at least one second die;

wherein an image obtained from the at least one third die is additionally selected as one of the reference images when the difference between the measured gray levels is not within the tolerance.

3. The method of selecting reference images according to claim 1, further comprising:

selecting at least one third die;

measuring the gray levels of the images obtained from the at least one third die; and

determining the difference in the measured gray levels of the at least one third die and the gray levels of the first die and the at least one second die;

wherein the first die, the at least one second die, and the at least one third die are substantially uniformly distributed on the wafer; and

wherein an image obtained from the at least one third die is additionally selected as one of the reference images when the difference between the measured gray levels is not within the tolerance.

4. A method for inspecting patterns on wafers comprising:

determining a tolerance for a difference between gray levels of dies located on a wafer;

selecting a first reference die and at least one second reference die;

obtaining images of the first reference die and the at least one second reference die;

measuring the gray levels of the images obtained from the first reference die and the at least one second reference die;

determining a difference in the measured gray levels of the first reference die and the at least one second reference die;

selecting at least one reference image;

dividing the wafer into application regions, each application region corresponding to a reference image; and

inspecting the dies located in each application region using the reference image corresponding to the application region;

wherein one image selected from the images obtained from the first reference die and the at least one second reference die is selected as the reference image when the difference between the measured gray levels is within the tolerance; and

wherein the image obtained from the first reference die and one of the images obtained from the at least one second reference die are selected as reference images when the difference between the measured gray levels is not within the tolerance.

5. The method for inspecting patterns according to claim 4, further comprising:

selecting at least one third reference die, the at least one third reference die being located in a region of the wafer between the first reference die and the at least one second reference die;

measuring the gray levels of images obtained from the at least one third reference die; and

determining the difference in the measured gray levels of the at least one third reference die and the gray levels of the first reference die and the at least one second reference die;

wherein an image obtained from the at least one third reference die is additionally selected as one of the reference images when the difference between the measured gray levels is not within the tolerance.

6. The method for inspecting patterns according to claim 4, further comprising:

selecting at least one third reference die;

measuring the gray levels of the images obtained from the at least one third reference die; and

determining the difference in the measured gray levels of the at least one third reference die and the gray levels of the first reference die and the at least one second reference die;

wherein the first reference die, the at least one second reference die, and the at least one third reference die are substantially uniformly distributed on the wafer; and

wherein an image obtained from the at least one third reference die is additionally selected as one of the reference images when the difference between the measured gray levels is not within the tolerance.

7. An apparatus for inspecting patterns on wafers comprising:

a tolerance setter for determining a tolerance for a difference between gray levels of dies located on a wafer;

a die selector for selecting reference dies;

an image capturing device for obtaining images of the reference dies;

a gray level calibrator for measuring the gray levels of the images of the reference dies;

a gray level comparator for determining a difference in the gray levels;

a reference image selector for selecting at least one reference image; and

a die splitter for dividing the wafer into application regions, each application region corresponding to a reference image.

8. The apparatus for inspecting patterns on wafers according to claim 7, wherein the die selector selects a first reference die located at a central portion of the wafer and at least one second reference die located at an edge portion of the wafer as the reference dies.

9. The apparatus for inspecting patterns on wafers of claim 8, wherein the die selector further selects at least one third reference die as one of the reference dies.

10. The apparatus for inspecting patterns on wafers according to claim 8, wherein the at least one second reference die includes four dies located at the edge portion of the wafer at intervals of approximately 90 degrees.

11. The apparatus for inspecting patterns on wafers according to claim 10, wherein the die selector further selects four third reference dies, the four third reference dies being located substantially at the centers of four hypothetical triangles, each hypothetical triangle being formed by interconnecting the first reference die and two adjacent second reference dies.

12. The apparatus for inspecting patters on wafers according to claim 8, wherein the die selector further selects at least one third reference die, the at least one third reference die being located in a region of the wafer between the first reference die and the at least one second reference die.

13. The apparatus for inspecting patterns on wafers according to claim 8, wherein the die selector further selects at least one third reference die;

wherein the first reference die, the at least one second reference die, and the at least one third reference die are substantially uniformly distributed on the wafer.

14. The apparatus for inspecting patterns on wafers according to claim 7, wherein the image capturing device is a charge coupled device camera.

38. A method for inspecting patterns on wafers comprising:

determining a tolerance for a difference between gray levels of dies located on a wafer;

selecting a first reference die and at least one second reference die;

obtaining images of the first reference die and the at least one second reference die;

measuring the gray levels of the images obtained from the first reference die and the at least one second reference die;

determining a difference in the measured gray levels of the first reference die and the at least one second reference die;

selecting at least one reference image;

dividing the wafer into application regions, each application region corresponding to a reference image; and

inspecting dies located in each application region utilizing the apparatus of claim 7;

wherein one image selected from images obtained from the first reference die and the at least one second reference die is selected as the reference image when the difference between the measured gray levels is within the tolerance; and

wherein the image from the first reference die and one of the images obtained from the at least one second reference die are selected as reference images when the difference between the measured gray levels is not within the tolerance.

15. A method for inspecting patterns on a wafer comprising:

selecting a plurality of reference dies;

determining a difference in gray levels of images of the reference dies;

selecting at least one image as a reference image;

performing a pattern inspection using the at least one reference image;

wherein one reference image is selected if the difference in gray levels is within a tolerance and more than one reference image is selected if the difference in gray levels is not within the tolerance.

16. The method of claim 15, further comprising:

determining the tolerance for the difference between gray levels of dies located on the wafer prior to selecting the at least one reference image.

17. The method of claim 15, further comprising obtaining images of the reference dies.

18. The method of claim 15, wherein determining the difference in gray levels of images of the reference dies includes:

measuring the gray levels of the images of the reference dies; and

comparing the gray levels to each other.

19. The method of claim 15, further comprising:

dividing the wafer into application regions, each application region corresponding to a reference image.

20. The method of claim 19, further comprising:

inspecting dies located in each application region using the reference image that corresponds to that application region.

21. The method of claim 15, wherein the plurality of reference dies includes a first reference die located substantially at the center of the wafer and at least one second reference die located at an edge portion of the wafer.

22. The method of claim 21, wherein the at least one second reference die includes four dies located at the edge portion of the wafer at intervals of approximately 90 degrees.

23. The method of claim 22, further comprising:

selecting four third reference dies, the four third reference dies being located substantially at the centers of four hypothetical triangles, each hypothetical triangle being formed by interconnecting the first reference die and two adjacent second reference dies;

measuring the gray levels of images of the third reference dies; and

determining a difference in the measured gray levels of the third reference dies and the gray levels of the first reference die and at least one second reference die;

wherein an image obtained from the third reference dies is additionally selected as a reference image when the difference between the measured gray levels is not within the tolerance.

24. The method of claim 22, further comprising:

selecting four third reference dies, the four third reference dies being located substantially adjacent to mid-points of two hypothetical lines connecting the first reference die and two opposing second reference dies;

measuring the gray levels of images obtained from the third reference dies; and

determining the difference in the measured gray levels of the third reference dies and the gray levels of the first die and at least one second die; and

wherein an image obtained from the third reference dies is additionally selected as a reference image when the difference between the measured gray levels is not within the tolerance.

25. The method of claim 21, further comprising:

selecting at least one third reference die;

measuring the gray levels of images obtained from the at least one third reference die; and

determining the difference in the measured gray levels of the at least one third reference die and the gray levels of the first reference die and at least one second reference die;

wherein the first reference die, the at least one second reference die, and the at least one third reference die are substantially uniformly distributed on the wafer; and

wherein an image obtained from the at least one third reference die is additionally selected as a reference image when the difference between the measured gray levels is not within the tolerance.

26. The method of claim 21, further comprising selecting at least one third reference die, the at least one third reference die being located in a region of the wafer between the first reference die and the at least one second reference die;

measuring the gray levels of the images obtained from the at least one third reference die; and

determining the difference in the measured gray levels of the at least one third reference die and the gray levels of the first reference die and at least one second reference die;

wherein an image obtained from the at least one third reference die is additionally selected as one of the reference images when the difference between the measured gray levels is not within the tolerance.

27. An apparatus for inspecting patterns on wafers comprising:

a die selector for selecting a plurality of reference dies;

a gray level comparator for comparing gray levels of images of the reference dies;

a reference image selector for selecting at least one reference image; and

a pattern inspector for inspecting patterns on a wafer using the at least one reference image.

28. The apparatus of claim 27, further comprising a die splitter for dividing the wafer into application regions, each application region corresponding to a reference image.

29. The apparatus of claim 28, further comprising a gray level calibrator for measuring the gray levels of the images of the reference dies.

30. The apparatus of claim 29, further comprising a tolerance setter for determining a tolerance for a difference between the gray levels of dies located on the wafer.

31. The apparatus of claim 30, further comprising an image capturing device for obtaining images of the reference dies.

32. The apparatus of claim 31, wherein the image capturing device is a charge coupled device camera.

39. A method for inspecting patterns on a wafer comprising:

selecting a plurality of reference dies;

determining a difference in gray levels of images of the reference dies;

selecting at least one image as a reference image;

performing a pattern inspection utilizing the apparatus of claim 27;

wherein one reference image is selected if the difference in gray levels is within a tolerance and more than one reference image is selected if the difference in gray levels is not within the tolerance.

33. A method for dividing a wafer into application regions comprising:

selecting a plurality of reference dies;

determining a difference in gray levels of images of the reference dies;

selecting at least one reference image; and

dividing the wafer into application regions, each application region corresponding to a reference image;

wherein one reference image is selected if the difference in gray levels is within a tolerance and more than one reference image is selected if the difference in gray levels is not within the tolerance.

34. The method of claim 33, wherein the reference dies are substantially uniformly distributed on the wafer.

35. The method of claim 33, wherein the reference dies include at least one first reference die substantially centrally located on the wafer and at least one second reference die located at an edge portion of the wafer.

36. The method of claim 33, further comprising obtaining images of the reference dies.

37. The method of claim 33, wherein determining the difference in gray levels of images of the reference dies includes:

measuring the gray levels of the images of the reference dies; and

comparing the gray levels to each other.

40. A method for selecting a reference image comprising:

selecting a plurality of reference dies;

determining a difference in gray levels of images of the reference dies; and

selecting at least one image as a reference image;

wherein one reference image is selected if the difference in gray levels is within a tolerance and more than one image is selected if the difference in gray levels is not within the tolerance.

41. The method of claim 40, further comprising obtaining images of the reference dies.

42. The method of claim 40, wherein determining the difference in gray levels of images of the reference dies includes:

measuring the gray levels of the images of the reference dies; and

comparing the gray levels to each other.