Method for producing p-type Group III nitride compound semiconductor

• US 20040058465A1
• Filed: 09/22/2003
• Published: 03/25/2004
• Est. Priority Date: 09/19/2002
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Taki, Tetsuya
• Granted Patent: US 7,041,519 B2
• Time in Patent Office: Days
• US Class Current: 438/22
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/2258 Diffusion into or out of AIIIBV compounds
• CPC Class Codes: H01L 21/3245 of AIIIBV compounds
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is reduced by a heat treatment after or during the formation of the second Group III nitride compound semiconductor layer.

Claims

1. A method of producing p-type Group III nitride compound semiconductor, comprising steps of:

forming a first Group III nitride compound semiconductor layer doped with p-type impurities;

forming a second Group III nitride compound semiconductor layer doped with substantially at least one of (i) no impurities, (ii) n-type impurities and (iii) n-type and p-type impurities; and

reducing resistance after or during the step of forming said second Group III nitride compound semiconductor layer.

2. A method of producing p-type Group III nitride compound semiconductor according to claim 1, further comprising a step of removing said second Group III nitride compound semiconductor layer after or during the step of reducing resistance.

3. A method of producing p-type Group III nitride compound semiconductor according to claim 1, wherein said second Group III nitride compound semiconductor layer has a thickness selected to be in a range of from 1 nm to 100 nm, both inclusively.

4. A method of producing p-type Group III nitride compound semiconductor according to claim 1, wherein an amount of p-type impurities added to said second Group III nitride compound semiconductor layer is smaller than an amount of p-type impurities added to said first Group III nitride compound semiconductor layer.