Controlling electromechanical behavior of structures within a microelectromechanical systems device
First Claim
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1. A method for fabricating a microelectromechanical systems device, the method comprising:
- fabricating a first layer comprising at least one film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and
modifying the characteristic electromechanical response of the first layer by at controlling charge buildup thereon during activation of the microelectromechanical systems device.
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Abstract
In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device.
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21 Claims
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1. A method for fabricating a microelectromechanical systems device, the method comprising:
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fabricating a first layer comprising at least one film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and
modifying the characteristic electromechanical response of the first layer by at controlling charge buildup thereon during activation of the microelectromechanical systems device. - View Dependent Claims (2, 3, 4, 5)
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6. A microelectromechanical systems device, comprising:
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a first layer; and
at least one second layer on or adjacent the first layer, wherein each second layer is of a material having a charge trapping density to manipulate charge buildup on the first layer. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A microelectomechanical systems device comprising:
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a layer including SiO2; and
at least one layer comprising Al2O3 on or adjacent the layer comprising SiO2. - View Dependent Claims (14)
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15. A microelectromechanical systems device comprising:
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a plurality of elements, each having a component that is electrostatically displaceable between an undriven and a driven condition; and
a driving mechanism to apply an actuation voltage to each element to displace its respective component from its undriven condition to its driven condition, and to apply a bias voltage to each element to keep its respective component in the driven condition, wherein the actuation voltage is greater than the bias voltage. - View Dependent Claims (16, 17)
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18. A microelectromechanical systems device comprising:
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a plurality of interference modulators, each comprising a reflective layer and a transparent layer which is normally spaced from the reflective layer by a gap corresponding to an undriven condition of the interference modulator, the reflective layer being electrostatically drivable towards the transparent layer to at least reduce a height of the gap, corresponding to a driven condition of the interference modulator; and
a driving mechanism to drive each interference modulator to its driven condition wherein an actuation voltage required to drive each transparent layer to its driven condition is greater than a bias voltage required to keep each transparent layer in its driven condition. - View Dependent Claims (19, 20, 21)
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Specification