System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold

• US 20040060573A1
• Filed: 12/24/2002
• Published: 04/01/2004
• Est. Priority Date: 09/30/2002
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Woods, Carl
• Granted Patent: US 7,240,679 B2
• Time in Patent Office: Days
• US Class Current: 134/1.3
• CPC Class Codes: C25D 17/001 Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
• CPC Class Codes: C25D 5/34 Pretreatment of metallic surfaces to be electroplated
• CPC Class Codes: H01L 21/02041 Cleaning
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67034 for drying
• CPC Class Codes: H01L 21/67046 using mainly scrubbing means, e.g. brushes
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

One of many embodiments of a substrate preparation system is provided which includes a drying system, the drying system including at least one proximity head for drying a substrate. The system also includes a cleaning system for cleaning the substrate.

Claims

1. A substrate preparation system, comprising:

a drying system, the drying system including at least one proximity head for drying a substrate; and

a cleaning system for cleaning the substrate.

2. A substrate preparation system as recited in claim 1, wherein the drying system includes,

a proximity head carrier assembly configured to scan the substrate, the proximity head carrier assembly including,

a proximity head;

an arm connected with the proximity head, the arm being configured so the proximity head is movable into close proximity to the substrate to initiate substrate preparation.

3. A substrate preparation system as recited in claim 1, wherein the drying system includes,

a proximity head carrier assembly configured to scan the substrate, the proximity head carrier assembly including,

a first proximity head being disposed over a substrate;

a second proximity head being disposed under the substrate;

an upper arm connected with the first proximity head, the upper arm being configured so the first proximity head is movable into close proximity over the substrate to initiate substrate preparation; and

a lower arm connected with the second proximity head, the lower arm being configured so the second proximity head is movable into close proximity under the substrate to initiate substrate preparation.

4. A substrate preparation system as recited in claim 1, wherein the proximity head includes,

a first surface of the head, the first surface capable of being placed in close proximity to the substrate surface;

a first conduit region on the head, the first conduit region defined for delivery of a first fluid to the substrate surface, the first conduit region defined in a center portion of the head;

a second conduit region on the head, the second conduit region being configured to surround the first conduit region; and

a third conduit region on the head, the third conduit region defined for delivery of a second fluid to the substrate surface, the third conduit region defining a semi-enclosure of the first conduit region and the second conduit region;

wherein second conduit region enabling a removal of the first fluid and the second fluid, and wherein the delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus that is defined between the head and the substrate surface when in operation and the head is proximate to the substrate surface.

5. A substrate preparation system as recited in claim 1, wherein the cleaning system is one of a brush box and a megasonic system.

6. A substrate preparation system as recited in claim 1, further comprising:

a front end loader for loading substrates into and out of one of the cleaning system and the drying system.

7. A substrate preparation system as recited in claim 6, wherein a robot is configured to load the substrate from the front end loader to one of the cleaning system and the drying system.

8. A cluster architecture system for processing a wafer, comprising:

an integrated drying system, the integrated drying system including at least one proximity head for drying a substrate; and

processing modules coupled to the integrated drying system, the processing modules selected from one or more of a chemical mechanical planarization module, a megasonic processing module, a cleaning module, and an etching module.

9. A cluster architecture system for processing a wafer as recited in claim 8, wherein the cleaning module is one of a brush box and a spin rinse and dry (SRD) module.

10. A cluster architecture system for processing a wafer as recited in claim 8, further comprising:

a front end loader which loads the substrate into one of the cleaning module, the megasonic processing module, the CMP module, the etching module, and the integrated drying system.

11. A cluster architecture system for processing a wafer as recited in claim 10, wherein a robot loads the wafer from the front end loader to one of the cleaning module, the megasonic processing module, the CMP module, the etching module, and the integrated drying system.

12. A cluster architecture system for processing a wafer as recited in claim 11, wherein the robot transports the substrate between the etching module, the cleaning module, the CMP module, the megasonic module, and the integrated drying system.

13. A cluster architecture system for processing a wafer as recited in claim 8, wherein the integrated drying system includes,

a proximity head carrier assembly configured to scan the substrate, the proximity head carrier assembly including,

a proximity head;

an arm connected with the proximity head, the arm being configured so the proximity head is movable into close proximity to the substrate to initiate substrate preparation.

14. A cluster architecture system for processing a wafer as recited in claim 8, wherein the integrated drying system includes,

a proximity head carrier assembly configured to scan the substrate, the proximity head carrier assembly including,

a first proximity head being disposed over a substrate;

a second proximity head being disposed under the substrate;

an upper arm connected with the first proximity head, the upper arm being configured so the first proximity head is movable into close proximity over the substrate to initiate substrate preparation; and

a lower arm connected with the second proximity head, the lower arm being configured so the second proximity head is movable into close proximity under the substrate to initiate substrate preparation.

15. A cluster architecture system for processing a wafer as recited in claim 14, wherein the proximity head includes,

a first surface of the head, the first surface capable of being placed in close proximity to the substrate surface;

a first conduit region on the head, the first conduit region defined for delivery of a first fluid to the substrate surface, the first conduit region defined in a center portion of the head;

a second conduit region on the head, the second conduit region being configured to surround the first conduit region; and

a third conduit region on the head, the third conduit region defined for delivery of a second fluid to the substrate surface, the third conduit region defining a semi-enclosure of the first conduit region and the second conduit region;

wherein second conduit region enabling a removal of the first fluid and the second fluid, and wherein the delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus that is defined between the head and the substrate surface when in operation and the head is proximate to the substrate surface.

16. A method for cluster processing a substrate, comprising:

performing at least one of,

etching a substrate,

planarizing the substrate,

megasonically processing the substrate,

cleaning the substrate; and

drying of the substrate, the drying including

applying a first fluid onto a first region of a surface of the substrate,

applying a second fluid onto a second region of the surface of the substrate;

removing the first fluid and the second fluid from the surface of the substrate, the removing occurring from a third region that substantially surrounds the first region;

wherein the second region substantially surrounds at least a portion of the third region, and the applying and the removing being capable of forming a controlled fluid meniscus.

17. A method for cluster processing a substrate as recited in claim 16, wherein the cleaning accomplished by one of a brush box and a spin, rinse, and dry system (SRD).

18. A method for cluster processing a substrate as recited in claim 16, wherein planarizing the substrate is accomplished by a chemical mechanical planarizing system.

19. A method for cluster processing substrate as recited in claim 16, wherein the first fluid is one of DIW and a cleaning fluid.

20. A method for cluster processing substrate as recited in claim 16, wherein the second fluid is one of isopropyl alcohol (IPA) vapor, nitrogen, organic compounds, hexanol, ethyl glycol, and compounds miscible with water.

21. A method for cluster processing substrate as recited in claim 16, wherein the removing the first fluid and the second fluid includes applying a vacuum in close proximity to the surface of the substrate.

22. A wafer preparation module, comprising:

a wafer brush scrubbing unit, the wafer brush scrubbing unit capable of scrubbing a wafer while applying cleaning fluids to the wafer;

a wafer drying insert, the wafer drying insert capable of being integrated into the wafer brush scrubbing unit, the wafer drying insert including a proximity head for drying a surface of the wafer without contacting the surface.

23. A wafer preparation module as recited in claim 22, wherein the proximity head includes,

a first surface of the head, the first surface capable of being placed in close proximity to the wafer surface;

a first conduit region on the head, the first conduit region defined for delivery of a first fluid to wafer of the surface, the first conduit region defined in a center portion of the head;

a second conduit region on the head, the second conduit region being configured to surround the first conduit region; and

a third conduit region on the head, the third conduit region defined for delivery of a second fluid to the wafer surface, the third conduit region defining a semi-enclosure of the first conduit region and the second conduit region;

wherein second conduit region enabling a removal of the first fluid and the second fluid, and wherein the delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus that is defined between the head and the wafer surface when in operation and the head is proximate to the wafer surface.

24. A wafer preparation module as recited in claim 22, wherein the wafer drying insert includes,

a proximity head carrier assembly configured to scan the substrate, the proximity head carrier assembly including,

the proximity head;

an arm connected with the proximity head, the arm being configured so the proximity head is movable into close proximity to the substrate to initiate substrate preparation.